Littelfuse-IXYS-IXFX44N80P
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Polar
TM
IXFK44N80P
IXFX44N80P
V
DSS
= 800V
I
D25
= 44A
R
DS(on)
190m
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Diode
G
D
S
Symbol
Test Conditions
Maximum Ratings
Tab
V
DSS
V
DGR
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
800
800
V
V
PLUS247 (IXFX)
V
GSS
V
GSM
Continuous
Transient
30
40
V
V
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
44
100
A
A
G
D
I
A
E
AS
T
C
= 25
C
T
C
= 25
C
22
3.4
A
J
Tab
S
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150
C
T
C
= 25
C
10
V/ns
W
G = Gate
S = Source
D
= Drain
Tab = Drain
1040
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
C
C
C
Features
T
L
T
SOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Fast Intrinsic Diode
M
d
F
C
Mounting Torque
(TO-264)
Mounting Force
(PLUS247)
1.13/10
Nm/lb.in
N/lb
Avalanche Rated
20..120 /4.5..27
Low R
DS(on)
Low Package Inductance
Weight
TO-264
PLUS247
10
6
g
g
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 800
μ
A
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
800
V
V
3.0
5.0
200 nA
I
DSS
50
A
T
J
= 125
C
1.5 mA
R
DS(on)
V
GS
= 10V, I
D
= 22A, Note 1
190 m
© 2018 IXYS CORPORATION, All Rights Reserved
DS99478F(12/18)
IXFK44N80P
IXFX44N80P
Symbol
Test Conditions
Characteristic Values
TO-264 Outline
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 22A,
Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
27
43
S
C
iss
C
oss
C
rss
12
910
30
nF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
28
22
75
27
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
PINS:
– Gate
2,4 – Drain
R
G
= 1
(External)
1
3
– Source
Q
g(on)
Q
gs
198
67
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
Q
gd
65
R
thJC
R
thCS
0.12
C/W
C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min. Typ.
Max.
I
S
V
GS
= 0V
44
A
A
V
PLUS247
TM
Outline
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= 44A, V
GS
= 0V,
Note 1
I
F
= 22A, V
GS
= 0V
100
1.5
t
rr
I
RM
250 ns
A
8.0
0.8
-di/dt = 100A/
s
V
R
= 100V
Q
RM
μ
C
PINS:
1
– Gate
2,4 – Drain
3
– Source
Note
1. Pulse
test, t
300
s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK44N80P
IXFX44N80P
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
Fig. 1. Output Characteristics @ T
J
= 25
o
C
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
GS
V
= 10V
GS
6V
7V
6V
5V
5V
0
0
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125
o
C
45
40
35
30
25
20
15
10
5
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
GS
V
= 10V
GS
6V
I
= 44A
D
I
= 22A
D
5V
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
50
45
40
35
30
25
20
15
10
5
V
= 10V
GS
T =
125
o
C
J
T =
25
o
C
J
0
-50
-25
0
25
50
75
100
125
150
10
20
30
40
50
60
70
80
90
100
I
D
– Amperes
T
C
– Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFK44N80P
IXFX44N80P
Fig. 7. Input Admittance
Fig. 8. Transconductance
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
T
J
= – 40
o
C
25
o
C
125
o
C
T
= 125
o
C
25
o
C
J
– 40
o
C
0
10
20
30
40
50
60
70
80
3.5
0.3
0
4.0
4.5
5.0
5.5
6.0
6.5
1.3
40
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
V
= 400V
DS
I
I
= 22A
D
G
= 10mA
60
T
= 125
o
C
J
40
T
= 25
o
C
J
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
20
40
60
80
100
120
140
160
180
200
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1000
100
10
= 1 MHz
f
R
Limit
DS(on)
C
iss
25
μ
s
100
μ
s
C
oss
1
1ms
T
= 150
o
C
= 25
o
C
J
C
rss
T
C
Si
n
gle Pulse
10ms
1,000
DC
10
0.1
5
10
15
20
25
30
35
10
100
V
DS
– Volts
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK44N80P
IXFX44N80P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
© 2018 IXYS CORPORATION, All Rights Reserved
IXY
S
R
EF:F_44N80
P
(
93-788)12-14-18-B
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
