Littelfuse-IXYS-IXTA10P50P
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PolarP
TM
Power MOSFET
IXTA10P50P
IXTP10P50P
IXTQ10P50P
IXTH10P50P
V
DSS
= –
500V
I
D25
= –
10A
R
DS(on)
1
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
G
D
S
G
D
D (Tab)
S
D (Tab)
D (Tab)
TO-247 (IXTH)
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
– 500
– 500
V
V
V
DGR
V
GSS
V
GSM
Continuous
Transient
20
30
V
V
G
D
S
D (Tab)
D =
Drain
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
– 10
– 30
A
A
G =
Gate
S =
Source
Tab =
Drain
I
A
E
AS
T
C
= 25
C
T
C
= 25
C
– 10
1.5
A
J
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150
C
T
C
= 25
C
10
V/ns
W
300
Features
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
C
C
C
International Standard Packages
Avalanche Rated
Rugged PolarP
TM
Process
Low Package Inductance
Fast Intrinsic Diode
T
L
T
SOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
C
C
M
d
Mounting Torque
(TO-3P,TO-220 & TO-247)
1.13/10
Nm/lb.in
Weight
TO-263
TO-220
TO-3P
2.5
3.0
5.5
6.0
g
g
g
g
Advantages
TO-247
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
– 500
– 2.0
Typ.
Max.
Applications
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= – 250
A
V
DS
= V
GS
, I
D
= – 250
A
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
– 4.5
100 nA
I
DSS
– 10
A
– 250
A
Current Regulators
T
J
= 125
C
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
1
DS99911D(2/15)
© 2015 IXYS CORPORATION,
All Rights Reserved
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= – 25V, f = 1MHz
6.5
11
S
C
iss
C
oss
C
rss
2840
275
42
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
20
28
52
44
ns
ns
ns
ns
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3
(External)
Q
g(on)
Q
gs
50
17
18
nC
nC
nC
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
R
thJC
R
thCS
0.4
2
C/W
C/W
(TO-3P & TO-247)
(TO-220)
0.25
0.50
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
– 10
– 40
– 3
I
S
V
GS
= 0V
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= – 5A, V
GS
= 0V, Note 1
t
rr
Q
RM
I
RM
414
5.90
– 28.6
ns
C
A
I
F
= – 5A, -di/dt = -100A/
s
V
R
= -100V, V
GS
= 0V
Note
1: Pulse
test, t
300
s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
Fig. 1. Output Characteristics @ T
J
= 25ºC
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-26
-22
-18
-14
-10
-6
V
= -10V
– 7V
V
= -10V
– 8V
GS
GS
– 7V
– 6V
– 6V
– 5V
– 5V
-2
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
-4
-8
-12
-16
-20
-24
-28
-32
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= – 5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125ºC
2.6
2.2
1.8
1.4
1.0
0.6
0.2
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
V
= -10V
– 7V
GS
V
= -10V
GS
I
= -10A
D
– 6V
I
= – 5A
D
– 5V
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= – 5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-11
-9
V
= -10V
GS
T
J
= 125ºC
-7
-5
-3
T
J
= 25ºC
-1
-2
-6
-10
-14
-18
-22
-26
-50
-25
0
25
50
75
100
125
150
I
D
– Amperes
Tc – Degrees Centigrade
© 2015 IXYS CORPORATION,
All Rights Reserved
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 7. Input Admittance
Fig. 8. Transconductance
24
20
16
12
8
-16
-14
-12
-10
-8
T
= – 40ºC
J
25ºC
T
J
= 125ºC
125ºC
25ºC
– 40ºC
-6
-4
4
-2
0
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
-30
-25
-20
-15
-10
-5
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
V
= – 250V
DS
I
I
= – 5A
D
G
= -1mA
T
J
= 125ºC
T
J
= 25ºC
0
0
5
10
15
20
25
30
35
40
45
50
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
Q
G
– NanoCoulombs
V
SD
– Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
100
–
1
0
-1
–
f
= 1 MHz
R
Limit
DS(on)
25µs
C
iss
100µs
1ms
10ms
100ms
C
C
oss
rss
DC
T =
150ºC
J
T
C
= 25ºC
Single Pulse
–
10
0.1
0
-5
-10
-15
-20
-25
-30
-35
-40
–
–
1000
10
–
100
V
DS
– Volts
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
© 2015 IXYS CORPORATION,
All Rights Reserved
IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
P
1
2
3
e
Terminals: 1
– Gate
2 – Drain
Inches
Dim.
Millimeter
Min. Max.
Min. Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205
0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232
0.252
R
4.32
5.49 .170
.216
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1
– Gate
2 – Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_10P50P(B5)5-21-08-B
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
