Littelfuse-IXYS-IXTA180N10T7-TRL
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Preliminary
T
e
chnical Information
TrenchMV
TM
Power MOSFET
V
DSS
= 100
I
D25
= 180
R
DS(on)
≤
6.4 m
Ω
V
A
IXTA180N10T7
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (7-lead)
(IXTA..7)
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
Ω
100
100
V
V
V
GSM
Transient
30
V
1
I
D25
I
LRMS
I
DM
T
C
=
2
5
°
C
Package Current Limit, RMS
T
C
= 25
°
C, pulse width limited by T
JM
180
120
450
A
A
A
7
(TAB)
Pin-out:1 – Gate
2, 3 – Source
4 – NC (cut)
5,6,7 – Source
TAB (8) – Drain
I
AR
E
AS
T
C
=
2
5
°
C
T
C
= 25
°
C
25
750
A
mJ
dv/dt
P
D
I
S
≤
I
DM
, di/dt
≤
100 A/
µ
s, V
DD
≤
V
DSS
T
J
≤
175
°
C, R
G
=3.3
Ω
3
V/ns
W
Features
T
C
=
2
5
°
C
480
ꢀ
Ultra-low On Resistance
°
C
ꢀ
Unclamped Inductive Switching (UIS)
T
J
T
JM
T
stg
-55 … +175
175
-55 … +175
°
C
°
C
rated
ꢀ
Low package inductance
– easy
to drive and to protect
ꢀ
175
°
C Operating Temperature
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°
C
°
C
Weight
3
g
Advantages
ꢀ
Easy to mount
Space savings
ꢀ
ꢀ
High power density
Applications
ꢀ
Symbol
Test Conditions
Characteristic Values
Automotive
(T
J
= 25
°
C unless otherwise specified)
Min. Typ.
Max.
– Motor
Drives
– 42V
Power Bus
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
µ
A
V
DS
= V
GS
, I
D
= 250
µ
A
100
V
V
– ABS
Systems
ꢀ
2.5
4.5
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
ꢀ
V
GS
=
20 V, V
DS
= 0 V
200
nA
ꢀ
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
5
250
µ
A
µ
A
T
J
= 150
°
C
ꢀ
ꢀ
R
DS(on)
V
GS
= 10 V, I
D
= 25 A, Note 1
5.4
6.4 m
Ω
Applications
High Voltage Synchronous Recifier
ꢀ
DS99711 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA180N10T7
Symbol
Test Conditions
Characteristic Values
Min. Typ.
Max.
TO-263 (7-lead)
(IXTA…7) Outline
(T
J
= 25
°
C unless otherwise specified)
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1
70
110
S
C
iss
C
oss
C
rss
6900
923
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
162
t
d(on)
t
r
t
d(off)
t
f
Resistive Switching Times
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
R
G
= 3.3
Ω
(External)
33
54
42
31
ns
ns
ns
ns
Q
g(on)
Q
gs
151
39
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A
Pins: 1
– Gate
2, 3 – Source
4 – Drain
Q
gd
45
R
thJC
0.3
1
°
C/W
5,6,7 – Source
Tab (8) – Drain
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J
= 25
°
C unless otherwise specified)
Min. Typ.
Max.
I
S
V
GS
= 0 V
180
A
A
I
SM
V
SD
t
rr
Pulse width limited by T
JM
I
F
= 25 A, V
GS
= 0 V, Note 1
450
0.95
V
I
F
= 25 A, -di/dt = 100 A/
µ
s
100
ns
V
R
= 50 V, V
GS
= 0 V
Notes: 1.
Pulse test, t
≤
300
µ
s, duty cycle d
≤
2 %.
PRELIMINAR
Y
T
ECHNICA
L
I
NFORMATION
The product presented herein is under development.
The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation.
IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs
and IGBTs are covered
by 4,835,592
4,931,844
one or moreof the following U.S. patents:
4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6771478 B2
7,071,537
IXTA180N10T7
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
300
275
250
225
200
175
150
125
100
75
180
160
140
120
100
80
V
= 10V
V
= 10V
GS
GS
9V
8V
9V
8V
7V
6V
7V
6V
60
40
50
20
25
0
0
0
0.2
0.4
0.6
0.8
1
1.2
0
1
2
3
4
5
6
7
V
DS
– Volts
V
DS
– Volts
Fig. 3. Output Characteristics
@ 150ºC
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value
vs. Junction Temperature
180
160
140
120
100
80
2.8
2.6
2.4
2.2
2
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
I
= 180A
D
1.8
1.6
1.4
1.2
1
I
= 90A
D
6V
5V
60
40
0.8
0.6
0.4
20
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
-25
0
25
50
75
100
125
150
175
T
J
– Degrees Centigrade
V
DS
– Volts
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
3
2.8
2.6
2.4
2.2
2
140
External Lead Current Limit for TO-263 (7-Lead)
120
100
80
60
40
20
0
T =
175ºC
J
External Lead Current Limit for TO-3P, TO-220, & TO-263
V
= 10V
15V
1.8
1.6
1.4
1.2
1
GS
– – – –
T =
25ºC
J
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
0
50
100
150
200
250
300
T
C
– Degrees Centigrade
I
D
– Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA180N10T7
Fig. 8. Transconductance
Fig. 7. Input Admittance
225
200
175
150
125
100
75
150
135
120
105
90
T
J
= – 40ºC
25ºC
75
150ºC
60
T
J
= 150ºC
45
25ºC
– 40ºC
50
30
25
15
0
0
3.5
0.4
0
4
4.5
5
5.5
6
6.5
7
7.5
1.2
40
0
25
50
75
100 125 150 175 200 225 250
I
D
– Amperes
V
GS
– Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
275
250
225
200
175
150
125
100
75
10
9
8
7
6
5
4
3
2
1
0
V
= 50V
DS
I
I
= 25A
D
G
= 10mA
T
J
= 150ºC
50
25
T
J
= 25ºC
0.8
0
0.5
0.6
0.7
0.9
1
1.1
0
20
40
60
80
100
120
140
160
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
f = 1 MHz
C
C
oss
rss
5
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
10
V
DS
– Volts
Pulse Width – Second
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N10T7
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
70
65
60
55
50
45
40
35
30
25
20
15
10
70
65
60
55
50
45
40
35
30
25
20
15
10
R
= 3.3
Ω
G
T =
25ºC
J
V
V
= 10V
= 50V
GS
DS
R
= 3.3
Ω
G
V
V
= 10V
= 50V
GS
DS
I
= 50A
D
I
= 25A
D
T =
125ºC
J
25
35
45
55
65
75
85
95
105 115 125
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
– Amperes
T
J
– Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
180
160
140
120
100
80
75
70
65
60
55
50
45
40
35
30
38
64
t
f
R
t
d(off)
– – – –
t
r
t
d(on)
– – – –
37
36
35
34
33
32
31
30
61
58
55
52
49
46
43
40
= 3.3
, V
= 10V
Ω
G
GS
T =
125ºC, V
= 10V
J
25A < I
< 50A
GS
D
V
= 50V
DS
V
= 50V
DS
I
= 50A
D
I
= 25A
D
60
40
20
I
= 25A, 50A
65
D
0
4
6
8
10
12
14
16
18
20
25
35
45
55
75
85
95 105
115 125
R
G
– Ohms
T
J
– Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
160
140
120
100
80
250
220
190
160
130
100
70
38
37
36
35
34
33
32
31
30
64
61
58
55
52
49
46
43
40
t
f
t
d(off)
– – – –
T =
125ºC, V
GS
= 10V
J
V
DS
= 50V
T
J
= 125ºC
t
f
R
t
d(off)
– – – –
= 3.3
, V
GS
= 10V
Ω
G
V
DS
= 50V
25A < I
< 50A
D
I
= 25A, 50A
D
60
T =
25ºC
J
40
20
40
25
30
35
40
45
50
2
4
6
8
10
12
14
16
18
20
R
G
– Ohms
I
D
– Amperes
© 2006 IXYS CORPORATION All rights reserved
IXYS REF: T_180N10T (61) 11-20-06-A.xls
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
