Littelfuse-IXYS-IXTA76P10T
| Part # | Littelfuse-IXYS-IXTA76P10T |
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TrenchP
TM
Power MOSFET
V
DSS
= –
100V
I
D25
= –
76A
IXTT76P10THV
IXTA76P10T
IXTP76P10T
IXTH76P10T
R
DS(on)
25
m
TO-268HV
(IXTT)
P-Channel Enhancement Mode
Avalanche Rated
G
G
D
S
D (Tab)
G
TO-263 AA
(IXTA)
S
S
D (Tab)
D (Tab)
Symbol
V
DSS
Test Conditions
Maximum Ratings
TO-220AB
(IXTP)
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
– 100
– 100
V
V
V
DGR
V
GSS
V
GSM
Continuous
Transient
15
25
V
V
G
D
S
S
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
– 76
A
A
TO-247
(IXTH)
– 230
I
A
E
AS
T
C
= 25
C
T
C
= 25
C
– 38
1
A
J
G
D
P
D
T
C
= 25
C
298
W
D (Tab)
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
C
C
C
G =
Gate
S =
Source
D
= Drain
Tab =
Drain
T
L
T
SOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
International Standard Packages
Avalanche Rated
M
d
Mounting Torque (TO-220 & TO-247)
1.13 /10
Nm/lb.in.
Weight
TO-263
TO-220
TO-268HV
TO-247
2.5
3.0
4.0
6.0
g
g
g
g
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
(T
J
= 25
C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= – 250
A
V
DS
= V
GS
, I
D
= – 250
A
V
GS
=
15V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
-100
V
V
Applications
– 2.0
– 4.0
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
100 nA
I
DSS
– 15
A
– 750
A
T
J
= 125
C
Current Regulators
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
25 m
Battery Charger Applications
DS100024C(9/15)
© 2017 IXYS CORPORATION,
All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note
1
V
GS
= 0V, V
DS
= – 25V, f = 1MHz
35
58
S
C
iss
C
oss
C
rss
13.7
890
275
nF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
25
40
52
20
ns
ns
ns
ns
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
(External)
Q
g(on)
Q
gs
197
65
nC
nC
nC
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
65
R
thJC
R
thCS
0.4
2
C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS
= 0V
– 76
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= – 38A, V
GS
= 0V, Note 1
– 304
-1.3
t
rr
Q
RM
I
RM
70
215
– 6
ns
nC
A
I
F
= – 38A, -di/dt = -100A/
s
V
R
= – 50V, V
GS
= 0V
Note
1: Pulse
test, t
300
s, duty cycle, d
2%.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
-80
-70
-60
-50
-40
-30
-20
-10
0
-280
-240
-200
-160
-120
-80
V
= -10V
V
= -10V
GS
GS
– 9V
– 9V
– 8V
– 8V
– 7V
– 6V
– 7V
– 6V
-40
– 5V
– 5V
0
0
-5
-10
-15
-20
-25
-30
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= – 38A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125
o
C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
-70
-60
-50
-40
-30
-20
-10
0
V
= -10V
GS
V
= -10V
GS
– 9V
– 8V
– 7V
I
= – 76A
D
– 6V
– 5V
I
= – 38A
D
-0.4
-0.8
-1.2
-1.6
-2
-2.4
-2.8
-3.2
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= – 38A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= -10V
GS
T
J
= 125
o
C
T
= 25
o
C
J
-50
-25
0
25
50
75
100
125
150
-40
-80
-120
-160
-200
-240
T
C
– Degrees Centigrade
I
D
– Amperes
© 2017 IXYS CORPORATION,
All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 7. Input Admittance
Fig. 8. Transconductance
100
80
60
40
20
0
-140
-120
-100
-80
-60
-40
-20
0
T
= – 40
o
C
J
V
= -10V
DS
V
= -10V
DS
25
o
C
T
J
= 125
o
C
125
o
C
25
o
C
– 40
o
C
-3.0
-0.4
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-1.5
-40
0
0
1
-20
-40
-60
-80
-100
-120
-140
-160
V
GS
– Volts
I
D
– Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-240
-200
-160
-120
-80
V
= – 50V
DS
I
I
= – 38A
D
G
= -1mA
T
J
= 125
o
C
T
J
= 25
o
C
-40
0
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
20
40
60
80
100
120
140
160
180
200
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000
–
f
= 1 MHz
100µs
25µs
1ms
10ms
R
Limit
DS(on)
100ms
–
100
C
iss
DC
10
–
C
C
oss
T =
150
o
C
= 25
o
C
J
T
C
Single Pulse
rss
-20
–
1
–
–
10
–
100
-5
-10
-15
-25
-30
-35
V
DS
– Volts
V
DS
– Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
44
40
36
32
28
24
20
44
40
36
32
28
24
20
R
G
= 1
Ω
, V
= -10V
GS
V
= – 50V
DS
T =
25
o
C
J
R
= 1
Ω
, V
= -10V
GS
G
V
= – 50V
DS
I
= – 38A
D
I
= – 76A
D
T =
125
o
C
J
25
35
45
55
65
75
85
95
105
115
125
-36
-40
-44
-48
-52
-56
-60
-64
-68
-72
-76
T
J
– Degrees Centigrade
I
D
– Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
24
75
200
160
120
80
110
t
r
t
d(on)
t
f
t
d(off)
23
22
21
20
19
18
17
16
70
65
60
55
50
45
40
35
T
J
= 125
o
C, V
= -10V
GS
R
G
= 1
Ω
, V
= -10V
GS
90
70
50
30
10
I
= – 76A, – 38A
D
V
= – 50V
DS
V
= – 50V
DS
I
= – 38A
D
I
= – 76A
D
40
0
25
35
45
55
65
75
85
95
105
115
125
0
2
4
6
8
10
12
14
16
18
20
T
J
– Degrees Centigrade
R
G
– Ohms
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
24
23
22
21
20
19
18
17
16
66
200
160
120
80
300
t
f
t
d(off)
= 125
o
C, V
GS
= -10V
t
f
t
d(off)
62
58
54
50
46
42
38
34
T
J
R
G
= 1
Ω
, V
GS
= -10V
240
180
120
60
V
DS
= – 50V
V
DS
= – 50V
I
= – 38A, – 76A
D
T
J
= 125
o
C, 25
o
C
40
0
0
0
2
4
6
8
10
12
14
16
18
20
-36
-40
-44
-48
-52
-56
-60
-64
-68
-72
-76
I
D
– Amperes
R
G
– Ohms
© 2017 IXYS CORPORATION,
All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_76P10T(A6)11-08-10-A
IXTT76P10THV IXTA76P10T
IXTP76P10T
IXTH76P10T
TO-268HV Outline
PINS:
1 – Gate
2 – Source
3 – Drain
TO-263 Outline
TO-247 Outline
TO-220 Outline
D
A
A2
A
B
E
Q
S
D2
P1
R
D1
D
4
1
2
3
L1
C
E1
1 = Gate
2 = Drain
3 = Source
4 = Drain
L
A1
b
C
b2
1 – Gate
b4
e
2,4 – Drain
3 – Source
Pins: 1
– Gate
3 – Source
2 – Drain
© 2017 IXYS CORPORATION,
All Rights Reserved
