Littelfuse-IXYS-IXTH12N150
| Part # | Littelfuse-IXYS-IXTH12N150 |
Download  | Littelfuse-IXYS-IXTH12N150 |
High Voltage
Power MOSFET
V
DSS
= 1500V
I
D25
= 12A
R
DS(on)
2.2
IXTT12N150
IXTH12N150
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-268 (IXTT)
G
Symbol
V
DSS
Test Conditions
Maximum Ratings
S
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
1500
1500
V
V
D
(Tab)
V
DGR
V
GSS
V
GSM
Continuous
Transient
30
40
V
V
TO-247 (IXTH)
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
12
40
A
A
I
A
E
AS
T
C
= 25°C
T
C
= 25°C
6
A
G
D
D
(Tab)
750
mJ
S
dv/dt
P
D
I
S
I
DM
, V
DD
V
DSS
, T
J
150
C
T
C
= 25
C
5
V/ns
W
G =
Gate
S =
Source
D
= Drain
890
Tab =
Drain
T
J
T
JM
T
stg
– 55 … +150
150
– 55 … +150
C
C
C
T
L
T
SOLD
1.6mm (0.062 in.) From Case for 10s
Plastic Body for 10s
300
260
C
C
Features
M
d
Mounting Torque
1.13 / 10
Nm/lb.in.
International Standard Packages
Molding Epoxies Weet UL 94 V-0
Flammability Classification
Fast Intrinsic Diode
Weight
TO-268
TO-247
4.0
6.0
g
g
Low Package Inductance
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
1500
2.5
Typ.
Max.
Advantages
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250
A
V
GS
=
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
Easy to Mount
Space Savings
High Power Density
4.5
100 nA
I
DSS
25
A
500
A
Applications
T
J
= 125
C
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
2.2
DS100425C(6/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXTT12N150
IXTH12N150
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
8
13
S
C
iss
C
oss
C
rss
3720
240
80
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
26
16
53
14
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
(External)
Terminals: 1
– Gate
2,4 –
Drain
3 – Source
Q
g(on)
Q
gs
106
17
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
50
R
thJC
R
thCS
0.14
C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS
= 0V
12
A
A
V
I
SM
V
SD
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
48
TO-247 Outline
1.4
t
rr
1.2
24.5
14.8
μ
s
A
I
F
= 6A, -di/dt = 100A/
s
I
RM
Q
RM
P
1
2
3
V
R
= 100V, V
GS
= 0V
μ
C
e
Note
1. Pulse
test, t
300
μ
s, duty cycle, d
2%.
Terminals: 1
– Gate
2 – Drain
3 – Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205
0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232
0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or moreof the following U.S. patents:
4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT12N150
IXTH12N150
Fig. 1. Output Characteristics @ T
J
= 25ºC
Fig. 2. Output Characteristics @ T
J
= 125ºC
14
12
10
8
8
7
6
5
4
3
2
1
0
V
= 10V
7V
GS
V
= 10V
GS
6V
6V
5.5V
5V
5V
6
4
2
4V
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
DS
– Volts
V
DS
– Volts
Fig. 3. R
DS(on)
Normalized to I
D
= 6A Value vs.
Junction Temperature
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Value vs.
Drain Current
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10V
GS
V
= 10V
GS
T
J
= 125ºC
I
= 12A
D
I
= 6A
D
T
J
= 25ºC
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
T
J
– Degrees Centigrade
I
D
– Amperes
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
14
12
10
8
14
12
10
8
T
J
= 125ºC
25ºC
– 40ºC
6
6
4
4
2
2
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
T
C
– Degrees Centigrade
V
GS
– Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXTT12N150
IXTH12N150
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
22
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
T
J
= – 40ºC
25ºC
125ºC
T
J
= 125ºC
6
T
J
= 25ºC
0.9
4
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0
2
4
6
8
10
12
14
V
SD
– Volts
I
D
– Amperes
Fig. 10. Capacitance
Fig. 9. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
10,000
1,000
100
V
= 700V
DS
I
I
= 6A
D
G
C
iss
= 10mA
C
C
oss
rss
= 1 MHz
5
f
10
0
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
100
110
V
DS
– Volts
Q
G
– NanoCoulombs
Fig. 11. Forward-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
100
10
1
1
25µs
R
Limit
DS(on)
0.1
100µs
1ms
0.01
T
= 150ºC
= 25ºC
J
T
C
10ms
DC
Single Pulse
0.1
0.001
10
100
1,000
10,000
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_12N150 (8M) 5-23-11
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
