Littelfuse-IXYS-IXTH88N30P
| Part # | Littelfuse-IXYS-IXTH88N30P |
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PolarHT
TM
Power MOSFET
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V
DSS
I
D25
R
DS(on)
= 300
V
= 88
A
≤
40 m
Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
D (TAB)
G
D
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
300
300
V
V
S
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Ω
V
GS
Continuous
Transient
20
30
V
V
TO-264 (IXTK)
V
GSM
I
D25
T
C
=
2
5
°
C
88
75
A
A
A
I
D(RMS)
I
DM
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
220
G
D
I
AR
T
C
=
2
5
°
C
60
A
S
E
AR
E
AS
T
C
=
2
5
°
C
T
C
=
2
5
°
C
60
mJ
J
D (TAB)
2.0
TO-3P (IXTQ)
dv/dt
P
D
I
S
≤
I
DM
, di/dt
≤
100 A/
µ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 4
Ω
10
V/ns
T
C
=
2
5
°
C
600
W
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
°
C
°
C
°
C
G
D
(TAB)
S
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
TO-268 (IXTT)
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
TO-264
TO-3P & TO-268
6.0
10
5.5
g
g
g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ.
Max.
Features
l
International standard package
Unclamped Inductive Switching (UIS)
rated
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
µ
A
V
DS
= V
GS
, I
D
= 250
µ
A
V
GS
= 20
V
DC
, V
DS
= 0
300
V
V
l
2.5
5.0
l
Low package inductance
– easy
to drive and to protect
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
100
1
µ
A
mA
Advantages
T
J
= 125
°
C
l
Easy to mount
Space savings
l
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µ
s, duty cycle d
≤
2 %
40
m
Ω
l
High power density
DS99129E(12/05)
© 2006 IXYS All rights reserved
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
Symbol
g
fs
Test Conditions
Characteristic Values
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
45
60
S
C
iss
C
oss
C
rss
6300
950
pF
pF
pF
190
t
d(on)
t
r
t
d(off)
t
f
25
24
96
25
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3
Ω
(External)
Q
g(on)
Q
gs
180
44
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
gd
90
R
thJC
0.21
°
C/W
R
thCS
R
thCS
TO-247 and TO-3P
TO-264
0.21
0.15
°
C/W
°
C/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
I
S
Test Conditions
Min.
Typ.
Max.
V
GS
= 0 V
Repetitive
88
A
A
V
I
SM
220
1.5
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µ
s, duty cycle d
≤
2 %
t
rr
Q
RM
I
F
= 25 A,
-di/dt = 100 A/
µ
s
V
R
= 100 V,
V
GS
= 0 V
250
3.3
ns
µ
C
Characteristic Curves
Fig. 2.
E
x
tended Output Characteristics
Fig. 1. Output Characteristics
@ 25
º
C
@ 25 C
º
200
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
V
GS
= 10V
V
GS
= 10V
9V
9V
8V
8V
7V
7V
60
6V
5V
40
6V
5V
20
0
0
2
4
6
8
10 12 14 16 18 20
0
0.5
1
1.5
2
2.5
3
3.5
4
V
D S
– Volts
V
D S
– Volts
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS MOSFETs
and IGBTs are covered
by 4,835,592
4,931,844
one or moreof the following U.S. patents:
4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6771478
B2
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
Fig. 3. Output Characteristics
Fig. 4. R
DS(on
N
o
rm alized
to 0.5 I
D
2
5
)
@ 125
º
C
Value vs. Junction Tem
perature
90
80
70
60
50
40
30
20
10
0
3
2.8
2.6
2.4
2.2
2
V
GS
= 10V
V
GS
= 10V
9V
8V
7V
6V
1.8
1.6
1.4
1.2
1
I
D
= 88A
I
D
= 44A
0.8
0.6
0.4
5V
6
0
1
2
3
4
5
7
8
9
-50
-25
0
25
50
75
100 125 150
V
D S
–
V
o
l
ts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
N
o
rm alized
to
0.5 I
D
2
5
V
alue vs. I
D
Fig. 6. Drain Current vs. Case
Tem perature
90
80
70
60
50
40
30
20
10
0
3.4
3.2
3
External Lead Current Limit
V
GS
= 10V
2.8
2.6
2.4
2.2
2
T
J
= 125ºC
1.8
1.6
1.4
1.2
1
T
J
= 25ºC
0.8
-50
-25
0
25
50
75
100 125
150
0
20 40 60 80
100 120 140 160 180 200
I
D
–
A
m
peres
T
C
– Degrees Centigrade
Fig. 8. Transconductance
Fig. 7. Input Ad
m
i
ttance
160
140
120
100
80
100
90
80
70
60
50
40
30
20
10
0
T
J
= -40ºC
25ºC
125ºC
60
T
J
= 125ºC
25ºC
40
-40ºC
20
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
20
40
60
80 100
120 140 160 180
V
G S
– Volts
I
D
– A
m
p
eres
© 2006 IXYS All rights reserved
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
Fig. 9. Source Current vs.
Source-To-
D
r
ain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
280
240
200
160
120
80
V
DS
= 150V
I
D
= 44A
I
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
40
0
0
20
40
60
80 100
120 140 160 180
0.4
0.6
0.8 1
V
S D
– Volts
1.2
1.4
1.6
Q
G
– nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
C
iss
25µs
100µs
C
C
1ms
10ms
oss
rss
DC
f =
1MHz
1
0
5
10
15
20
V
D S
– Volts
25
30
35
40
10
100
V
D S
– Volts
1000
Fig. 13. Maxi
m
um Transient Thermal
R
e
sistance
1.00
0.10
0.01
1
10
100
1000
P
u
lse Width –
m
illi
s
econds
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
1
2
3
Terminals:
1. Gate
2,4. Drain
Terminals:
3. Source
1. Gate
2,4. Drain
3. Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205
0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232
0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
TO-264 (IXTK)
Outline
© 2006 IXYS All rights reserved
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
