Littelfuse-IXYS-IXTK90P20P

Part #Littelfuse-IXYS-IXTK90P20P
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Littelfuse-IXYS-IXTK90P20P
PolarP

TM  

Power MOSFET  
V

DSS

= –
 
200V  
I

D25

= –
 
90A  
I
XTK90P20P  
IXTX90P20P  
R

DS(on)  

44m
  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
G
D
S
Symbol  
V

DSS  

Test Conditions  
Maximum Ratings  
T

J

= 25
C to 150
C  
T

J

= 25
C to 150
C, R

GS

= 1M
  
– 200  
– 200  
V
V
Tab  
V

DGR  

V

GSS  

V

GSM  

Continuous  
Transient  
20  
30  
V
V
PLUS247 (IXTX)  
I

D25  

I

DM  

T

C

= 25
C  
T

C

= 25
C, Pulse Width Limited by T

JM  

– 90  
A
A
– 270  
I

A  

E

AS  

T

C

= 25
C  
T

C

= 25
C  
– 90  
3.5  
A
J
G
D
S
Tab  
dv/dt  
P

D  

I

S

I

DM

, V

DD

V

DSS

, T

J

150
C  
T

C

= 25
C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
890  
Tab = Drain  
T

J  

T

JM  

T

stg  

-55 … +150  
150  
-55 … +150  
C  
C  
C  
Features  

International Standard Packages  

Rugged PolarP

TM

Process  

Avalanche Rated  
T

L  

T

SOLD  

Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
M

d  

Mounting Force  
Mounting Torque  
(PLUS247)  
(TO-264)  
20..120 / 4.5..27  
1.13 / 10  
N/lb  
Nm/lb.in  

Fast Intrinsic Diode  

Low Package Inductance  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(T

J

= 25
C, Unless Otherwise Specified)  
Min.  
– 200  
– 2.0  
Typ.  
Max.  
Applications  
BV

DSS  

V

GS(th)  

I

GSS  

V

GS

= 0V, I

D

= – 250
A  
V

DS

= V

GS

, I

D

= -1mA  
V

GS

=
20V, V

DS

= 0V  
V

DS

= V

DSS

, V

GS

= 0V  
V
V
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
– 4.5  

100 nA  
I

DSS  

– 50
 
A  
– 250
 
A  
Current Regulators  
T

J

= 125
C  
R

DS(on)  

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note
 
1  
44 m
  
© 2016 IXYS CORPORATION,
 
All Rights Reserved  
DS99933D(6/16)  

IXTK90P20P  
IXTX90P20P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(T

J

= 25
C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
g

fs  

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note
 
1  
V

GS

= 0V, V

DS

= – 25V, f = 1MHz  
30  
51  
S
C

iss  

C

oss  

C

rss  

12  
2210  
250  
nF  
pF  
pF  
t

d(on)  

t

r  

t

d(off)  

t

f  

32  
60  
89  
28  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25  

R

G

= 1
(External)  
: 1
 
– Gate  
2 – Drain  
3 – Source  
4 – Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Q

g(on)  

Q

gs  

205  
45  
nC  
nC  
nC  
V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25  

Q

gd  

80  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
R

thJC  

R

thCS  

0.14

C/W  
C/W  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-Drain Diode  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
Test Conditions  
Characteristic Values  
(T

J

= 25
C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
I

S  

V

GS

= 0V  
– 90  
A
A
V
I

SM  

V

SD  

Repetitive, Pulse Width Limited by T

JM  

I

F

= – 45A, V

GS

= 0V,
 
Note 1  
– 360  
– 3.2  
PLUS 247

TM

Outline  
t

rr  

315  
6.6  
ns  
C  
A
I

F

= – 45A, -di/dt = -150A/
s  
Q

RM  

I

RM  

V

R

= -100V, V

GS

= 0V  
– 42  
Note  
1: Pulse
 
test, t
300
s, duty cycle, d
2%.  
Terminals: 1
 
– Gate  
2 – Drain  
3 – Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A

1  

A

2  

4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b

1  

b

2  

1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs
 
and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072
 
5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1
 
6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2
 
6,759,692  
6,710,463  
7,005,734 B2
 
7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

IXTK90P20P  
IXTX90P20P  
Fig. 1. Output Characteristics @ T

J

= 25ºC  
Fig. 2. Extended Output Characteristics @ T

J

= 25ºC  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-240  
-200  
-160  
-120  
-80  
V

GS

= -10V  
V

GS

= -10V  
– 9V  
– 9V  
– 8V  
– 8V  
– 7V  
– 6V  
– 7V  
– 6V  
– 5V  
-40  
– 5V  
0
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
0
-5  
-10  
-15  
-20  
-25  
-30  
V

DS

– Volts  
V

DS

– Volts  
Fig. 4. R

DS(on)

Normalized to I

D

= – 45A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ T

J

= 125ºC  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
V

GS

= -10V  
V

GS

= -10V  
– 9V  
– 8V  
– 7V  
– 6V  
I

D

= – 90A  
I

D

= – 45A  
– 5V  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
V

DS

– Volts  
T

J

– Degrees Centigrade  
Fig. 5. R

DS(on)

Normalized to I

D

= – 45A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
V

GS

= -10V  
T

J

= 125ºC  
T

J

= 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
-30  
-60  
-90  
-120  
-150  
-180  
-210  
-240  
T

C

– Degrees Centigrade  
I

D

– Amperes  
© 2016 IXYS CORPORATION,
 
All Rights Reserved  

IXTK90P20P  
IXTX90P20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
-120  
-100  
-80  
-60  
-40  
-20  
0
T

J

= – 40ºC  
T

J

= – 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-4.5  
-40  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
V

GS

– Volts  
I

D

– Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-270  
-240  
-210  
-180  
-150  
-120  
-90  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
V

DS

= -100V  
I
I

D

= – 45A  

G

= -1mA  
T

J

= 125ºC  
T

J

= 25ºC  
-60  
-30  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
Q

G

– NanoCoulombs  
V

SD

– Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
–
100,000  
10,000  
1,000  
100  
1,000  
= 1MHz  
f
R

DS(on)

Limit  
T

J

= 150ºC  
T

C

= 25ºC  
C
Single Pulse  
iss  
25µs  
–
100  
100µs  
C
oss  
1ms  
–
10  
10ms  
C
rss  
100ms  
DC  
–
1
–
–
–
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
10  
100  
1000  
V

DS

– Volts  
V

DS

– Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

IXTK90P20P  
IXTX90P20P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width – Seconds  
© 2016 IXYS CORPORATION,
 
All Rights Reserved  
IXYS REF: T_90P20P(B9)03-25-09-D  

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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at