Littelfuse-IXYS-IXTL2N450
| Part # | Littelfuse-IXYS-IXTL2N450 |
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High Voltage
Power MOSFET
V
DSS
I
D25
= 4500V
= 2A
IXTL2N450
R
DS(on)
20
(Electrically Isolated Tab)
ISOPLUS i5-Pak
TM
N-Channel Enhancement Mode
Symbol
V
DSS
Test Conditions
Maximum Ratings
G
S
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C, R
GS
= 1M
4500
4500
V
V
Isolated
Tab
V
DGR
D
V
GSS
V
GSM
Continuous
Transient
20
30
V
V
G =
Gate
D =
Drain
S =
Source
I
D25
I
DM
T
C
= 25
C
T
C
= 25
C, Pulse Width Limited by T
JM
2
8
A
A
P
D
T
C
= 25
C
220
W
T
J
T
JM
T
stg
– 55 … +150
150
– 55 … +150
C
C
C
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
T
L
T
SOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Isolated Mounting Surface
4000V~ RMS Electrical Isolation
Molding Epoxies meet UL 94 V-0
Flammability Classification
F
C
Mounting Force
20..120 / 4.5..27
N/lb.
V~
g
V
ISOL
Weight
50/60Hz
,
1 Minute
4000
8
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ. Max.
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
A
V
GS
=
20V, V
DS
= 0V
3.5
6.0
V
Applications
200 nA
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
I
DSS
V
DS
= 3.6kV, V
GS
= 0V
V
DS
= 4.5kV
V
DS
= 3.6kV
10
A
50
μ
A
Laser and X-Ray Generation Systems
Note 2, T
J
= 125
C
250
μ
A
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note
1
20
DS100458B(9/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTL2N450
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 60V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
Integrated Gate Input Resistance
2.1
3.5
S
C
iss
C
oss
C
rss
6860
267
pF
pF
pF
105
R
Gi
4.0
t
d(on)
t
r
t
d(off)
t
f
40
34
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 1kV, I
D
= 1A
R
G
= 0
(External)
123
205
Q
g(on)
Q
gs
180
34
nC
nC
nC
V
GS
= 10V, V
DS
= 1kV, I
D
= 0.5 • I
D25
Q
gd
83
R
thJC
R
thCS
0.56
C/W
C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS
= 0V
2
8
3
A
A
I
SM
V
SD
t
rr
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
V
I
F
= 2A, -di/dt = 100A/
μ
s, V
R
= 100V
1.75
μ
s
Notes: 1.
Pulse test, t
300
s, duty cycle, d
2%.
2. Part
must be heatsunk for high-temp Idss measurement.
ISOPLUS i5-Pak
TM
(IXTL) Outline
A
S
E
Q
A2
U
R
T
Q1
D
R1
4
1
2
3
L1
1 = Gate
2 = Source
3 = Drain
4 = Isolated
L
c
b1
b2
e1
e
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or moreof the following U.S. patents:
4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTL2N450
Fig. 2. Output Characteristics @ T
J
= 125ºC
Fig. 1. Output Characteristics @ T
J
= 25ºC
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
GS
V
= 10V
GS
6V
7V
6.5V
5.5V
5V
6V
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
V
DS
– Volts
V
DS
– Volts
Fig. 3. R
DS(on)
Normalized to I
D
= 1A Value
vs. Junction Temperature
Fig. 4. R
DS(on)
Normalized to I
D
= 1A Value
vs. Drain Current
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 10V
V
= 10V
GS
T
J
= 125ºC
I
= 2A
D
I
= 1A
D
T
J
= 25ºC
-50
-25
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
I
D
– Amperes
T
J
– Degrees Centigrade
Fig. 5. Maximum Drain Current vs. Case Temperature
Fig. 6. Input Admittance
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.6
1.2
0.8
0.4
0.0
T
= 125ºC
J
25ºC
6.0
– 40ºC
-50
-25
0
25
50
75
100
125
150
4.0
4.5
5.0
5.5
6.5
7.0
T
C
– Degrees Centigrade
V
GS
– Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXTL2N450
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
6
5
4
3
2
1
0
6
5
4
3
2
1
0
T
J
= – 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
40
10
I
D
– Amperes
V
SD
– Volts
Fig. 10. Capacitance
Fig. 9. Gate Charge
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 1000V
DS
C
iss
I
I
= 1A
D
G
= 10mA
C
oss
rss
C
f = 1 MHz
5
10
0
10
15
20
25
30
35
0
20
40
60
80
100
120
140
160
180
V
DS
– Volts
Q
G
– NanoCoulombs
Fig. 12. Resistive Switching Times vs.
External Gate Resistance
Fig. 11. Forward-Bias Safe Operating Area
300
250
200
150
100
50
10
R
Limit
)
DS(
on
V
= 1kV, V
= 10V
GS
DS
25µs
I
D
= 1A, T
= 25ºC
J
100µs
1
t
f
1ms
10ms
t
r
t
d(off)
0.1
0.01
T =
150ºC
J
100ms
1s
t
d(on)
T
C
= 25ºC
Single Pulse
DC
0
100
1,000
10,000
0
1
2
3
4
5
6
7
8
9
V
DS
– Volts
R
G(ext)
– Ohms
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTL2N450
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width – Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_2N450(H9-P640) 9-24-13
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
