Littelfuse-IXYS-IXTP52P10P
| Part # | Littelfuse-IXYS-IXTP52P10P |
Download  | Littelfuse-IXYS-IXTP52P10P |
PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA52P10P
IXTH52P10P
IXTP52P10P
IXTQ52P10P
TO-247 (IXTH)
V
DSS
= –
100V
I
D25
= –
52A
R
DS(on)
≤
50
m
Ω
TO-220 (I
XTP
)
TO-263 (I
XTA
)
G
S
G
D (TAB)
D (TAB)
D (TAB)
G
D
S
D
S
Symbol
V
DSS
Test Conditions
Maximum Ratings
TO-3P (IXTQ)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C, R
GS
= 1M
Ω
-100
-100
V
V
V
DGR
V
GSS
V
GSM
Continuous
Transient
±
20
±
30
V
V
G
D
S
D (TAB)
= Drain
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
– 52
A
A
-130
G = Gate
S = Source
D
I
AR
T
C
= 25
°
C
T
C
= 25
°
C
– 52
1.5
A
J
TAB =
Drain
E
AS
dV/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150
°
C
T
C
= 25
°
C
10
V/ns
W
Features:
300
z
International standard packages
z
Fast intrinsic diode
z
Dynamic dV/dt Rated
z
Avalanche Rated
z
Rugged PolarP
TM
process
z
Low Q
G
and R
ds(on)
characterization
z
Low Drain-to-Tab capacitance
z
Low package inductance
– easy
to drive and to protect
T
J
T
JM
T
stg
-55 … +150
150
-55 … +150
°
C
°
C
°
C
T
L
T
SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°
C
°
C
M
d
Mounting torque
(TO-3P,TO-220,TO-247)
1.13/10
Nm/lb.in.
Weight
TO-247
TO-3P
TO-220
TO-263
6.0
5.5
3.0
2.5
g
g
g
g
Applications:
z
Hight side switching
Push-pull amplifiers
DC Choppers
Current regulators
z
z
z
Symbol
Test Conditions
Characteristic Values
Min. Typ.
Max.
z
(T
J
= 25
°
C, unless otherwise specified)
Automatic test equipment
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= – 250
μ
A
V
DS
= V
GS
, I
D
= – 250
μ
A
V
GS
=
±
20V, V
DS
= 0V
-100
– 2.5
V
Advantages:
– 4.5
V
z
Low gate charge results in simple
±
100 nA
drive requirement
Improved Gate, Avalanche and
z
I
DSS
V
DS
= V
DSS
V
GS
= 0V
-10
μ
A
-150
μ
A
dynamic dV/dt ruggedness
High power density
Fast switching
Easy to parallel
T
J
= 125
°
C
z
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note
1
50 m
Ω
z
z
DS99912A(5/08)
© 2008 IXYS CORPORATION,
All rights reserved
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note
1
12
20
S
C
iss
C
oss
C
rss
2845
1015
275
pF
pF
pF
V
GS
= 0V, V
DS
= – 25V, f = 1MHz
t
d(on)
t
r
t
d(off)
t
f
22
29
38
22
ns
ns
ns
ns
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3
Ω
(External)
Q
g(on)
Q
gs
60
17
23
nC
nC
nC
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
R
thJC
R
thCS
0.42
°
C/W
°
C/W
(TO-3P)(TO-247)
(TO-220)
0.21
0.50
°
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS
= 0V
– 52
A
A
V
I
SM
V
SD
Repetitive, pulse width limited by T
JM
I
F
= – 26A, V
GS
= 0V,
Note 1
– 200
– 3.5
t
rr
Q
RM
I
RM
120
0.53
– 8.9
ns
μ
C
A
I
F
= – 26A, -di/dt = -100A/
μ
s
V
R
= – 50V, V
GS
= 0V
Note 1:
Pulse test, t
≤
300
μ
s; duty cycle, d
≤
2%.
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
TO-263 (IXTA) Outline
TO-247 (IXTH) Outline
∅
P
1
2
3
e
Terminals: 1
– Gate
2 – Drain
Inches
Dim.
Millimeter
Min. Max.
Min. Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205
0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅
P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232
0.252
R
4.32
5.49 .170
.216
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1
– Gate
2 – Drain
© 2008 IXYS CORPORATION,
All rights reserved
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
-130
-110
-90
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
V
GS
= -10V
– 9V
V
GS
= -10V
– 9V
– 8V
– 8V
-70
– 7V
– 6V
– 7V
-50
-30
– 6V
– 5V
– 5V
-10
0
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0
-3
-6
-9
-12
-15
-18
-21
-24
-27
-30
150
150
V
DS
– Volts
V
DS
– Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. R
DS(on)
Normalized to I
D
= – 26A vs.
Junction Temperature
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
= -10V
– 9V
V
GS
= -10V
– 8V
I
D
= – 52A
I
D
= – 26A
– 7V
– 6V
– 5V
0
0.0 -0.5
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5
V
DS
– Volts
-50
-25
0
25
50
75
100
125
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= – 26A vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= -10V
T
J
= 125ºC
T
J
= 25ºC
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90 -100
-50
-25
0
25
50
75
100
125
I
D
– Amperes
IXYS reserves the right to change limits, test conditions,
and dimensions.
T
J
– Degrees Centigrade
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
32
28
24
20
16
12
8
-70
-60
-50
-40
-30
-20
-10
0
T
J
= – 40ºC
T
J
= – 40ºC
25ºC
125ºC
25ºC
125ºC
4
0
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0
0
-10
-20
-30
-40
-50
-60
-70
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-160
-140
-120
-100
-80
-60
-40
-20
0
V
DS
= – 50V
I
D
= – 26A
I
G
= -1mA
T
J
= 125ºC
T
J
= 25ºC
0
5
10 15 20 25 30 35 40 45 50 55 60
Q
G
– NanoCoulombs
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
V
SD
– Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
–
1,000
-100
-10
10,000
1,000
100
= 1 MHz
f
R
DS(on)
Limit @ V
GS
= -15V
C
iss
100µs
25µs
1ms
10ms
C
oss
DC, 100ms
C
rss
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
–
1
–
–
100
0
-5
-10
-15
-20
-25
-30
-35
-40
10
V
DS
– Volts
V
DS
– Volts
© 2008 IXYS CORPORATION,
All rights reserved
IXTA52P10P IXTH52P10P
IXTP52P10P IXTQ52P10P
Fig. 13. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
IXYS reserves the right to change limits, test conditions,
and dimensions.
IXYS REF: T_52P10P(B5)3-25-08-B
