Littelfuse-IXYS-IXTQ82N25P
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V
DSS
= 250V
I
D25
= 82A
R
DS(on)
38m
Polar
TM
Power MOSFET
IXTT82N25P
IXTQ82N25P
IXTK82N25P
TO-268 (IXTT)
N-Channel Enhancement Mode
Avalanche Rated
G
S
Symbol
V
DSS
Test Conditions
Maximum Ratings
D (Tab)
T
J
= 25
C to 150
C
250
250
V
V
TO-3P( IXTQ)
V
DGR
T
J
= 25
C to 150
C, R
GS
= 1M
V
GSS
V
GSM
Continuous
Transient
20
30
V
V
G
D
S
I
D25
I
LRMS
T
C
= 25
C
Lead Current Limit
82
75
A
A
D (Tab)
I
DM
P
D
T
C
= 25
C, Pulse Width Limited by T
JM
T
C
= 25
C
200
500
A
TO-264 (IXTK)
W
T
J
-55 … +150
150
C
C
C
T
JM
T
stg
G
D
S
-55 … +150
T
L
T
SOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
D (Tab)
G =
Gate
S =
Source
D
= Drain
M
d
Mounting Torque (TO-3P&TO-264)
1.13 / 10
Nm/lb.in
Tab =
Drain
Weight
TO-268
TO-3P
TO-264
4.0
5.5
10.0
g
g
g
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Symbol
Test Conditions
Characteristic Values
Advantages
(T
J
= 25
C, Unless Otherwise Specified)
Min.
250
2.5
Typ.
Max.
High Power Density
Easy to Mount
Space Savings
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
V
5.0
V
GS
=
20V, V
DS
= 0V
100 nA
Applications
I
DSS
V
DS
= V
DSS
, V
GS
= 0V
25
A
T
J
= 125
C
250
A
Switch-Mode and Resonant-Mode
Power Supplies
R
DS(on)
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
38 m
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS99121F(7/14)
© 2014 IXYS All Rights Reserved
IXTT82N25P IXTQ82N25P
IXTK82N25P
Symbol
Test Conditions
Characteristic Values
TO-3P Outline
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
30
52
S
C
iss
C
oss
C
rss
4800
900
pF
pF
pF
210
t
d(on)
t
r
t
d(off)
t
f
29
20
78
22
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
(External)
Q
g(on)
Q
gs
142
32
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
74
R
thJC
R
thCS
0.25
C/W
TO-3P
TO-264
0.21
0.15
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max
I
S
V
GS
= 0V, Note1
82
A
A
TO-264 AA Outline
I
SM
V
SD
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
328
1.4
V
I
F
= 25A, -di/dt = 100A/
μ
s
t
rr
Q
RM
200
2
ns
C
V
R
= 100V
: 1
– Gate
2 – Drain
3 – Source
4 – Drain
Note 1.
Pulse test, t
300
s, duty cycle, d
2%.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
TO-268 Outline
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Terminals: 1
– Gate
3 – Source
2,4 –
Drain
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2
6,759,692
6,710,463
6,771,478 B2 7,071,537
IXTT82N25P IXTQ82N25P
IXTK82N25P
Fig. 1. Output Characteristics @ T
J
= 25ºC
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
90
80
70
60
50
40
30
20
10
0
200
180
160
140
120
100
80
V
= 10V
9V
V
= 10V
GS
GS
8V
7V
9V
8V
60
7V
6V
40
6V
5V
20
0
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 41A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 125ºC
90
80
70
60
50
40
30
20
10
0
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
9V
GS
V
= 10V
GS
8V
7V
I
= 82A
D
I
= 41A
D
6V
5V
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. R
DS(on)
Normalized to I
D
= 41A Value vs.
Drain Current
80
70
60
50
40
30
20
10
0
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
External Lead Current Limit
V
= 10V
GS
T =
125ºC
J
T
= 25ºC
J
0
20
40
60
80
100
120
140
160
180
200
-50
-25
0
25
50
75
100
125
150
I
D
– Amperes
T
C
– Degrees Centigrade
© 2014 IXYS All Rights Reserved
IXTT82N25P IXTQ82N25P
IXTK82N25P
Fig. 7. Input Admittance
Fig. 8. Transconductance
180
160
140
120
100
80
80
70
60
50
40
30
20
10
0
T
= – 40ºC
J
25ºC
125ºC
60
T
J
= 125ºC
25ºC
– 40ºC
40
20
0
0
20
40
60
80
100
120
140
160
180
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
V
GS
– Volts
I
D
– Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
240
220
200
180
160
140
120
100
80
10
V
= 125V
DS
9
8
7
6
5
4
3
2
1
0
I
I
= 41A
D
G
= 10mA
T
J
= 125ºC
60
T
J
= 25ºC
40
20
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
20
40
60
80
100
120
140
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
1000
100
10
10,000
1,000
100
C
iss
25µs
R
Limit
DS(on)
100µs
C
oss
1ms
10ms
DC
T =
150ºC
J
C
rss
T
C
= 25ºC
= 1 MHz
5
f
Single Pulse
1
0
10
15
20
25
30
35
40
1
10
100
1,000
V
DS
– Volts
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT82N25P IXTQ82N25P
IXTK82N25P
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width – Second
© 2014 IXYS All Rights Reserved
IXYS REF: T_82N25P (7J) 7-16-14-B
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
