Littelfuse-IXYS-IXTT170N10P
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Polar
TM
Power MOSFET
V
DSS
= 100V
I
D25
= 170A
R
DS(on)
≤
9m
Ω
IXTT170N10P
IXTQ170N10P
IXTK170N10P
TO-268 (IXTT)
N-Channel Enhancement Mode
Avalanche Rated
G
S
Tab
TO-3P (IXTQ)
Symbol
V
DSS
Test Conditions
Maximum Ratings
T
J
= 25°C to 175°C
100
100
V
V
V
V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1M
Ω
G
D
V
GSS
V
GSM
Continuous
Transient
± 20
± 30
S
Tab
I
D25
I
L(RMS)
T
C
= 25°C
External Lead Current Limit
170
160
A
A
TO-264 (IXTK)
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
350
A
I
A
T
C
= 25°C
T
C
= 25°C
60
2
A
J
E
AS
G
Tab
D
dv/dt
P
D
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
10
V/ns
W
S
T
C
= 25°C
715
T
J
-55 to +175
+175
°C
°C
°C
G =
Gate
S =
Source
D
= Drain
Tab =
Drain
T
JM
T
stg
-55 to +175
Features
T
L
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
T
SOLD
z
International Standard Packages
z
Fast Intrinsic Rectifier
z
Avalanche Rated
M
d
Mounting Torque
(TO-264 & TO-3P)
1.13/10
Nm/lb.in.
Weight
TO-268
TO-3P
TO-264
4.0
5.5
10.0
g
g
g
z
Low R
DS(ON)
and Q
G
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified)
Min.
100
2.5
Typ.
Max.
z
Space Savings
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= ± 20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
V
5.0
Applications
±100 nA
z
Switch-Mode and Resonant-Mode
Power Supplies
I
DSS
25
μ
A
T
J
= 150°C
250
μ
A
z
DC-DC Converters
z
Laser Drivers
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 15V, I
D
= 350A
9 m
Ω
m
Ω
z
AC and DC Motor Drives
z
Robotics and Servo Controls
7
© 2010 IXYS CORPORATION, All Rights Reserved
DS99176F(01/10)
IXTT170N10P IXTQ170N10P
IXTK170N10P
Symbol
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(T
J
= 25
°
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
50
72
S
C
iss
C
oss
C
rss
6000
2340
730
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
35
50
90
33
ns
ns
ns
ns
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 60A
R
G
= 3.3
Ω
(External)
Q
g(on)
Q
gs
198
39
nC
nC
nC
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Q
gd
107
R
thJC
R
thCS
0.21
°
C/W
(TO-3P)
(TO-264)
0.25
0.15
°
C/W
°
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, Unless Otherwise Specified)
Min.
Typ.
Max.
170
350
1.5
TO-264 AA ( IXTK) Outline
I
S
V
GS
= 0V
A
A
I
SM
V
SD
t
rr
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
V
120
2.0
ns
μ
C
I
F
= 25A, -di/dt = 100A/
μ
s,
V
R
= 50V, V
GS
= 0V
Q
RM
1
2
3
=
=
=
Gate
Drain
Source
Back Side
Note 1. Pulse
test, t
≤
300
μ
s, duty cycle, d
≤
2%.
Tab = Drain
Dim.
Millimeter
Inches
Min. Max.
TO-268 (IXTT) Outline
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2
6,759,692
6,710,463
7,005,734 B2
7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
Fig. 1. Output Characteristics @ T
J
= 25ºC
320
280
240
200
160
120
80
180
160
140
120
100
80
V
GS
= 10V
V
GS
= 10V
9V
9V
8V
7V
8V
7V
60
40
6V
5V
6V
5V
40
20
0
0
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3.2
350
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
175
175
V
DS
– Volts
V
DS
– Volts
Fig. 4. R
DS(on)
Normalized to I
D
= 85A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T
J
= 150ºC
180
160
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 10V
V
GS
= 10V
9V
8V
I
D
= 170A
I
D
= 85A
7V
6V
60
40
20
5V
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
-25
0
25
50
75
100
125
150
V
DS
– Volts
T
J
– Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 85A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
160
140
120
100
80
3.0
2.6
2.2
1.8
1.4
1.0
0.6
V
GS
= 10V
15V
– – – – –
External Lead Current Limit
T
J
= 175ºC
60
40
T
J
= 25ºC
20
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
T
C
– Degrees Centigrade
I
D
– Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
320
280
240
200
160
120
80
120
100
80
60
40
20
0
T
J
= – 40ºC
T
J
= – 40ºC
25ºC
150ºC
25ºC
150ºC
40
0
0
40
80
120
160
200
240
280
320
3
4
5
6
7
8
9
10
1.6
40
I
D
– Amperes
V
GS
– Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
V
DS
= 50V
I
D
= 85A
I
G
= 10mA
T
J
= 25ºC
T
J
= 150ºC
0
0
20
40
60
80
100
120
140
160
180
200
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
– Volts
Q
G
– NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
1,000
100
10
= 1 MHz
f
1ms
100µs
R
DS(on)
Limit
10ms
DC
C
iss
C
oss
T
J
= 175ºC
C
rss
T
C
= 25ºC
Single Pulse
1
0
5
10
15
20
25
30
35
1
10
V
DS
– Volts
100
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT170N10P IXTQ170N10P
IXTK170N10P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_170N10P(8S)01-07-10-C
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
