Littelfuse-IXYS-IXTY01N100D
| Part # | Littelfuse-IXYS-IXTY01N100D |
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Depletion Mode
MOSFET
V
DSX
= 1000V
IXTY01N100D
IXTU01N100D
IXTP01N100D
R
DS(on)
80
D
N-Channel
TO-252
(IXTY)
G
G
S
S
D (Tab)
Symbol
V
DSX
Test Conditions
Maximum Ratings
TO-251
(IXTU)
T
J
= 25
C to 150
C
T
J
= 25
C to 150
C
1000
1000
V
V
V
DGX
G
D
V
GSX
V
GSM
Continuous
Transient
20
30
V
V
S
D (Tab)
I
DM
P
D
T
C
= 25
C, Pulse Width Limited by T
J
400
mA
TO-220
(IXTP)
T
C
= 25
C
T
A
= 25
C
25
1.1
W
W
T
J
T
JM
T
stg
– 55 … +150
150
– 55 … +150
C
C
C
G
D
S
D (Tab)
T
L
T
SOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
G = Gate
D
= Drain
S = Source
Tab =
Drain
M
d
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-252
TO-251
TO-220
0.35
0.40
3.00
g
g
g
Features
• Normally
ON Mode
•
International Standard Packages
•
Low R
DS(on)
HDMOS
TM
Process
• Rugged
Polysilicon Gate Cell Structure
• Fast
Switching Speed
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
1000
– 2.0
Typ.
Max.
BV
DSX
V
GS(off)
I
GSX
V
GS
= -10V, I
D
= 25
A
V
DS
= 25V, I
D
= 25
A
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSX
, V
GS
= -10V
V
V
Advantages
– 4.5
• Easy
to Mount
• Space
Savings
• High
Power Density
100 nA
I
DSX(off)
10
A
T
J
= 125
C
250
A
Applications
R
DS(on)
I
D(on)
V
GS
= 0V, I
D
= 50mA, Note 1
V
GS
= 0V, V
DS
= 25V, Note 1
50
80
• Level
Shifting
• Triggers
400
mA
• Solid
State Relays
• Current
Regulators
DS98809F(5/19)
©2019 IXYS CORPORATION,
All Rights Reserved
IXTY01N100D IXTU01N100D
IXTP01N100D
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS
= 100V, I
D
= 100mA, Note 1
V
GS
= -10V, V
DS
= 25V,
f = 1MHz
100
200
mS
C
iss
C
oss
C
rss
100
12
2
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
7
10
34
64
ns
ns
ns
ns
Resistive Switching Times
V
GS
=
5V, V
DS
= 50V, I
D
= 50mA
R
G
= 30
(External)
Q
g(on)
Q
gs
5.8
3.6
0.4
nC
nC
nC
V
GS
=
5V, V
DS
= 500V, I
D
= 50mA
Q
gd
R
thJC
R
thCS
5.0
C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, Unless Otherwise Specified)
Min.
Typ.
Max.
V
SD
t
rr
I
F
= 100mA, V
GS
= -10V,
Note 1
1.5
V
I
F
= 750mA, -di/dt = 100A/
s
V
R
= 25V, V
GS
= -10V
1.5
μ
s
Note 1. Pulse
test, t
300
s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
IXYS MOSFETs
and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2
6,759,692
6,710,463
6,771,478 B2 7,071,537
IXTY01N100D IXTU01N100D
IXTP01N100D
Fig. 1. Output Characteristics @ T
J
= 25
o
C
Fig. 2. Output Characteristics @ T
J
= 125
o
C
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
V
= 5.0V
0V
GS
V
= 5.0V
0V
GS
– 0.5V
-1.0V
-1.5V
– 0.5V
-1.0V
-1.5V
– 2.0V
– 3.0V
– 2.0V
– 3.0V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
9
10
11
V
DS
– Volts
V
DS
– Volts
Fig. 3. Drain Current @ T
J
= 25
o
C
Fig. 4. Drain Current @ T
J
= 100
o
C
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
V
GS
= 0V
V
GS
= 0V
-0.5V
-1.0V
-0.5V
-1.0V
– 1.5V
– 2.0V
-1.5V
-2.0V
– 2.5V
– 3.0V
– 2.5V
– 3.0V
– 3.5V
– 4.0V
– 3.5V
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
450
V
DS
– Volts
V
DS
– Volts
Fig. 5. Dynamic Resistance vs. Gate Voltage
Fig. 6. Normalized R
DS(on)
vs. Junction Temperature
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 300V – 100V
∆
V
= 0V
DS
GS
I
= 50mA
D
T
J
= 25
o
C
T
J
= 100
o
C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-50
-25
0
25
50
75
100
125
150
V
GS
– Volts
T
J
– Degrees Centigrade
©2019 IXYS CORPORATION,
All Rights Reserved
IXTY01N100D IXTU01N100D
IXTP01N100D
Fig. 7. R
DS(on)
Normalized to I
D
= 50mA Value
vs. Drain Current
Fig. 8. Input Admittance
250
200
150
100
50
5
4
3
2
1
0
V
= 0V
5V
V
= 100V
GS
DS
T
= 125
o
C
25
o
C
J
– 40
o
C
T
J
= 125
o
C
T
J
= 25
o
C
0
0
100
200
300
400
500
600
700
800
900
1000
-3.5
0.3
0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.9
6
I
D
– MilliAmperes
V
GS
– Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
350
300
250
200
150
100
50
300
250
200
150
100
50
T
J
= – 40
o
C
V
= 100V
DS
25
o
C
125
o
C
V
= -10V
GS
T
= 125
o
C
J
T
J
= 25
o
C
0
0
0
50
100
150
200
250
0.4
0.5
0.6
0.7
0.8
I
D
– MilliAmperes
V
SD
– Volts
Fig. 12. Gate Charge
Fig. 11. Capacitance
5
4
1,000
100
10
= 1 MHz
V
= 500V
f
DS
I
I
= 50mA
= 1mA
D
G
3
C
iss
2
1
0
C
C
-1
-2
-3
-4
-5
oss
rss
1
1
2
3
4
5
0
5
10
15
20
25
30
35
40
Q
G
– NanoCoulombs
V
DS
– Volts
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
IXTY01N100D IXTU01N100D
IXTP01N100D
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25
o
C
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75
o
C
1
1
R
DS(on)
Limit
R
DS(on)
Limit
250
μ
s
250
μ
s
1ms
0.1
0.1
1ms
10ms
T =
150
o
C
J
T =
150
o
C
100ms
10ms
J
= 75
o
C
DC
T
C
= 25
o
C
T
C
100ms
Si
n
gle Pulse
Single Pulse
DC
0.01
0.01
10
100
1,000
10
100
1,000
V
DS
– Volts
V
DS
– Volts
Fig. 15. Maximum Transient Thermal Impedance
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width – Seconds
©2019 IXYS CORPORATION,
All Rights Reserved
IXYS REF: T_01N100D(F2)6-16-17-A
IXTY01N100D IXTU01N100D
IXTP01N100D
TO-252 Outline
TO-251 Outline
TO-220 Outline
1 – Gate
2,4 – Drain
3 – Source
1 – Gate
2,4 – Drain
3 – Source
1 – Gate
2,4 – Drain
3 – Source
IXYS Reserves the Right to Change Limits, Test Conditions,
and Dimensions.
IXTY01N100D IXTU01N100D
IXTP01N100D
Disclaimer Notice – Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
©2019 IXYS CORPORATION,
All Rights Reserved
