Littelfuse-L401E6RP
| Part # | Littelfuse-L401E6RP |
| Download | Littelfuse-L401E6RP |
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600 V
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Lx01Ex & LxNx & Qx01Ex & QxNx Series
Description
1 Amp bi-directional solid state switch series is designed
for AC switching and phase control applications such as
motor speed and temperature modulation controls, lighting
controls, and static switching relays.
Sensitive
type devices guarantee gate control in Quadrants
I & IV needed for digital control circuitry.
Standard
type devices normally operate in Quadrants I & III
triggered from AC line.
Features & Benefits
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4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ
20 A
Main Features
(MBTTꢀoꢀQBTTJWBUFEꢀ
junctions
Symbol
Value
1
Unit
A
I
T(RMS)
V
DR
M
/
V
RRM
400 to 600
3 to 25
V
I
GT (Q1)
mA
Applications
Excellent for lower current heating controls, water valves,
and solenoids.
Schematic Symbol
T
y
pical applications are AC solid-state switches, home/
brown goods and white goods appliances.
Sensitive gat
e
T
r
iacs can be directly driven by
microprocessor or popular opto-couplers/isolators.
MT2
MT1
G
Absolute Maximum Ratings — Sensitiv
e
T
r
iacs
(4 Quadrants)
Symbol Parameter
I
T(RMS)
Value
Unit
RMS on-state current
(full sine wave)
Lx01Ey/LxNy
T
C
= 50°C
1
A
f = 50 Hz
f = 60 Hz
t = 20 ms
16.7
20
Non repetitive surge peak on-state current
I
TSM
A
(full cycle, T
initial = 25°C)
t = 16.7 ms
J
I
2
t
I
2
t Value for fusing
t
p
= 8.3 ms
1
.
6
A
2
s
Critical rate of rise of on-state current
(I
G
= 50mA with
c
0.1μs rise time)
di/dt
f = 120 Hz
20
A/μs
T =
1
1
0
°C
J
I
GTM
Peak gate trigger current
t
p
c
10 μs
1
A
T =
1
1
0
°C
J
P
G(AV)
Average gate power dissipation
0.2
W
T =
1
1
0
°C
J
Lx01Ey
LxNy
-65 to 150
-40 to 125
-65 to
1
10
-40 to
1
10
Storage temperature range
°C
°C
T
stg
Lx01Ey
LxNy
T
Operating junction temperature range
J
Note: x = voltage, y = sensitivity
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
33
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Absolute Maximum Ratings — Standar
d
T
r
iacs
Symbol
I
T(RMS)
Parameter
Value
Unit
RMS on-state current
(full sine wave)
Qx01Ey/QxNy
T
C
= 60°C
1
A
f = 50 Hz
f = 60 Hz
t = 20 ms
16.7
60
Non repetitive surge peak on-state current
I
TSM
A
(full cycle, T
initial = 25°C)
J
t = 16.7 ms
I
2
t
I
2
t Value for fusing
t
p
= 8.3 ms
1
.
6
A
2
s
Critical rate of rise of on-state current
di/dt
f = 120 Hz
20
1
A/μs
T = 125°C
J
(I
G
= 200mA with
c
0.1μs rise time)
t
p
c
10 μs;
I
GT
c
I
GTM
I
GTM
P
G(AV)
T
stg
Peak gate trigger current
Average gate power dissipation
Storage temperature range
A
T = 125°C
J
0.2
W
°C
T = 125°C
J
L/Qx01Ey
L/QxNy
-65 to 150
-40 to 150
-65 to 125
-40 to 125
L/Qx01Ey
L/QxNy
T
Operating junction temperature range
°C
J
Note: x = voltage, y = sensitivity
Electrical Characteristics
(T =
25°C, unless otherwise specified)
— Sensitiv
e
T
r
iac
(4 Quadrants)
J
Lx01E3
LxN3
Lx01E5
LxN5
Lx01E6
Lx01E8
LxN8
Symbol
T
e
st Conditions
Quadrant
*ꢀoꢀ**ꢀoꢀ***
Unit
LxN6
3
3
5
5
5
10
20
I
GT
MAX.
mA
V
D
= 12V
R
L
= 60
8
IV
10
V
GT
V
GD
I
H
ALL
ALL
MAX.
MIN.
MAX.
1
.
3
V
V
V
D
= V
DRM
R
L
= 3.3 k
8
T =
1
1
0
°C
0.2
J
I
T
= 1
0
0mA
5
10
20
10
1
10
30
20
1
15
35
25
1
mA
400V
600V
20
10
dv/dt
V
D
= V
DRM
Gate Open T = 100°C
TY
P
.
V/μs
J
(dv/dt)c
t
gt
(di/dt)c = 0.54 A/ms T =
1
1
0
°C
TY
P
.
TY
P
.
0.5
2.8
V/μs
μs
J
I
G
= 2 x I
GT
PW = 15μs
I
T
=
1
.
41 A(pk)
3.0
3.0
3.2
Electrical Characteristics
(T =
25°C, unless otherwise specified)
— Standar
d
T
r
iac
J
Qx01E3
Qx01E4
Symbol
T
e
st Conditions
Quadrant
*ꢀoꢀ**ꢀoꢀ***
Unit
QxN3
QxN4
MAX.
TY
P
.
10
25
I
GT
mA
V
D
= 12V
R
L
= 60
8
IV
25
1
.
3
0.2
15
30
20
1
50
1
.
3
0.2
25
40
30
1
V
GT
V
GD
I
H
*ꢀoꢀ**ꢀoꢀ***
ALL
MAX.
MIN.
MAX.
V
V
V
D
= V
DRM
R
L
= 3.3 k
8
T = 125°C
J
I
T
= 200mA
mA
400V
600V
dv/dt
V
D
= V
DRM
Gate Open T = 125°C
MIN.
V/μs
J
(dv/dt)c
t
gt
(di/dt)c = 0.54 A/ms T = 125°C
TY
P
.
TY
P
.
V/μs
μs
J
I
G
= 2 x I
GT
PW = 15μs
I
T
=
1
.
41 A(pk)
2.5
3.0
Note: x
= voltage, y = sensitivity
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
34
Specifications are subject to change without notice.
Revised: March 31, 2010
03:44 PM
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Static Characteristics
(T =
25°C, unless otherwise specified)
J
Symbol
T
e
st Conditions
Value
1
.
60
2
Unit
V
V
TM
I
TM
=
1
.
41A
t
p
= 380 ꢀs
MAX.
T = 25°C
400-600V
400-600V
400-600V
400-600V
μA
J
Lx01Ey / LxNy
T =
1
1
0
°C
0.1
5
mA
μA
J
I
DRM
I
RRM
V
DRM
= V
RRM
MAX.
T = 25°C
J
Qx01Ey / QxNy
T = 125°C
1
mA
J
Thermal Resistances
Symbol
Parameter
Value
50
Unit
L/Qx01Ey
L/QxNy
Junction to case (AC)
°C/W
°C/W
R
R
(J-C)
R
R
(J-A)
40
*
95
Junction to ambient
L/Qx01Ey
Note: * = Mounted on 1 cm
2
copper (two-ounce) foil surface
Figure 2: Normalized DC Gat
e
T
r
igger Current for
All Quadrants vs. Junctio
n
T
e
mperature
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
4.0
3.0
2.0
1.0
0.0
MT2 POSITIVE
(Positive Half Cycle)
MT2
MT2
+
(
–
)
I
(+)
I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
QII QI
I
–
+
I
GT
GT
QIII QIV
MT2
MT2
(
–
)
I
(+)
I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
-6
5
-40
-1
5
10
3
5
60
8
5
110
12
5
–
Junction Temperature (T
j
) – ºC
MT2 NEGATIVE
(Negative Half Cycle)
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
35
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Figure 3: Normalized DC Holding Current
vs. Junctio
n
T
e
mperature
Figure 4: Normalized DC Gat
e
T
r
igge
r
V
o
ltage for
All Quadrants vs. Junctio
n
T
e
mperature
4.0
3.0
2.0
1.0
0.0
2.0
1.
5
1.0
0.
5
0.0
-6
5
-40
-1
5
10
3
5
60
8
5
110
12
5
-6
5
-40
-1
5
10
3
5
60
8
5
110
12
5
Junction Temperature (T
j
) – ºC
Junction Temperature (Tj) – ºC
Figure 5: Power Dissipation (
T
y
pical)
vs. RMS On-State Current
Figure 6: Maximum Allowable Cas
e
T
e
mperature
vs. On-State Current
130
1.
5
CURRENT WAVE FORM: Sinusoidal
LOAD: Resistive or Inductive
120
110
100
90
CONDUCTION ANGLE: 360º
CASE TEMPERATURE: Measured as shown
on Dimensional Drawing
CURRENT WAVE FORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
1.0
0.
5
0.0
Qx01Ex /QxNx
Lx01Ex / LxNx
80
70
60
5
0
0
0.2
5
0.
5
0.7
5
1.0
1.2
5
0
0.2
0.4
0.6
0.8
1
1.2
RMS On-State Current (I
T(RMS)
) – Amps
RMS On-State Current [I
T(RMS)
] – AMPS
Figure 7: Maximum Allowable Ambien
t
T
e
mperature
vs. On-State Current
Figure 8: On-State Current vs. On-Stat
e
V
o
ltage
(
T
y
pical)
120
8
7
6
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360º
100
FREE AIR RATING
– NO HEATSINK
5
80
60
40
20
T
C
= 2
5
ºC
4
3
2
1
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
0.1
0.2
0.3
0.4
0.
5
0.6
0.7
Positive or Negative Instantaneous On-State Voltage
(V
T
) – Volts
RMS On-State Current [I
T(RMS)
] – AMPS
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
36
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Figure 9: Surge Peak On-State Current vs. Number of Cycles
100
10
1
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
1
10
100
1000
Surge Current Duration – Full Cycles
Soldering Parameters
Reflow Condition
1Cꢀoꢀ’SFFꢀBTTFNCMZ
150°C
t
P
T
P
–
T
e
mperature Min (T
s(min)
)
Ramp-up
T
L
T
S(max)
Pre Heat
–
T
e
mperature Max (T
s(max)
-Time (min to max) (t
s
)
)
200°C
t
L
ꢁꢂꢀoꢀꢃꢄꢂꢀTFDT
Ramp-down
Average ramp up rate (Liquidu
s
T
e
mp)
(T
L
) to peak
5°C/second max
5°C/second max
T
S(min)
t
S
T
S(max)
t
o
T
L
– Ramp-up Rate
–
T
e
mperature (T
L
) (Liquidus)
217°C
25
Reflow
time to peak temperature
–
T
e
mperature (t
L
)
ꢁꢂꢀoꢀꢃꢅꢂꢀTFDPOET
Time
Pea
k
T
e
mperature (T
P
)
260°C
Time within 5°C of actual peak
T
e
mperature (t
p
)
ꢆꢂꢀoꢀꢇꢂꢀTFDPOET
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 25°C to pea
k
T
e
mperature (T
P
)
Do not exceed
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
37
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Physical Specifications
Environmental Specifications
T
e
st
AC Blocking
Specifications and Conditions
T
e
rminal Finish
Body Material
1
0
0% Matt
e
T
in-plated
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
UL recognized epoxy meeting flammability
classification 94V-0
MIL-STD-750, M-1051,
1
0
0 cycles; -40°C to +150°C; 15-min
dwell time
T
e
mperature Cycling
T
e
rminal Material
Copper Alloy
EIA / JEDEC, JESD22-A101
1
0
08 hours; 320V – DC: 85°C; 85%
rel humidity
T
e
mperature/
Humidity
MIL-STD-750, M-1031,
1
0
08 hours; 150°C
Hig
h
T
e
mp Storage
Low-
T
e
mp Storage
Design Considerations
1
0
08 hours; -40°C
Careful selection of the correct device for the application
’
s
operating parameters and environment will go a long way
toward extending the operating life of th
e
T
hyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell
time at each temperature; 10 sec (max)
transfer time between temperature
Thermal Shock
Autoclave
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
1
0
0% R/H
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
Lead Bend
ANSI/J-STD-002, category 3,
T
e
st A
MIL-STD-750, M-2036 Cond E
Dimensions – Compak (C Package)
T
/T
T
e
mperature
L
C
Inches
Millimeters
Min
Measurement Point
Dimension
Min
Max
0.156
0.220
0.087
0.181
0.063
0.096
0.008
0.104
0.053
0.016
0.055
0.028
0.033
0.058
Max
3.95
5.60
2.20
4.60
1
.
60
2.45
0.20
2.65
1
.
35
0.41
1
.
40
0.71
0.84
1
.
47
Gate
P
B
D
A
B
C
D
E
0.130
0.201
0.077
0.159
0.030
0.075
0.002
0.077
0.043
0.006
0.030
0.022
0.027
0.052
3.30
5.10
1
.
95
4.05
0.75
1
.
90
0.05
1
.
95
1
.
09
0.15
0.76
0.56
0.69
1
.
32
M
N
A
C
MT1
MT2
F
G
H
J
F
H
L
E
J
K
G
K
0.079
(2.0)
0.079
(2.0)
0.079
(2.0)
L
M
N
P
0.040
(
1
.
0)
0.
1
10
(2.8)
0.030
(0.76)
Dimensions are in inches
(and millimeters).
Pad Outline
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
38
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Dimensions
–
T
O-92 (E Package)
T
Measuring Point
C
Inches
Millimeters
Dimension
Min
Max
Min
Max
A
A
B
D
E
0.176
0.500
0.095
0.150
0.046
0.135
0.088
0.176
0.088
0.013
0.013
0.196
–
4.47
12.70
2.41
3.81
1
.
16
4.98
–
0.105
–
2.67
–
B
F
0.054
0.145
0.096
0.186
0.096
0.019
0.017
1
.
37
3.68
2.44
4.73
2.44
0.48
0.43
G
H
J
3.43
2.23
4.47
2.23
0.33
0.33
MT1
M
MT2
K
Gate
E
L
G
M
H
All leads insulated from case. Case is electrically nonconductive.
F
L
D
K
J
Product Selector
Voltage
Gate Sensitivity Quadrants
T
y
pe
Part Number
Package
400V
600V
I – II – III
IV
Lx01E3
LxN3
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
3 mA
3 mA
3 mA
5 mA
5 mA
10 mA
20 mA
Sensitiv
e
T
r
iac
Sensitiv
e
T
r
iac
Sensitiv
e
T
r
iac
Sensitiv
e
T
r
iac
Sensitiv
e
T
r
iac
Sensitiv
e
T
r
iac
Standar
d
T
r
iac
Standar
d
T
r
iac
Standar
d
T
r
iac
Standar
d
T
r
iac
TO-92
Compak
TO-92
3 mA
Lx01E5
LxN5
5 mA
5 mA
Compak
TO-92
Lx01E6
Lx01E8
Qx01E3
QxN3
5 mA
10 mA
10 mA
10 mA
25 mA
25 mA
TO-92
TO-92
Compak
TO-92
Qx01E4
QxN4
Compak
Note: x- voltage
Packing Options
Part Number
L/Qx01Ey
Marking
Weight
Packing Mode
Base Quantity
L/Qx01Ey
L/Qx01Ey
L/Qx01Ey
L/QxNy
0.188 g
0.188 g
0.188 g
0.081 g
Bulk
2000
2000
2000
2500
L/Qx01EyRP
L/Qx01EyAP
L/QxNyRP
Reel Pack
Ammo Pack
Embossed Carrier
Note: x = Voltage; y = Sensitivity
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
39
Specifications are subject to change without notice.
Revised: March 31, 2010
03:44 PM
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
TO-92 (3-lead) Reel Pack (RP) Radial Leaded
Meets all EIA-468-B 1994 Standards
0.02 (0.5)
0.236
(6.0)
0.098 (2.5) MAX
1.26
1.6
(32.0)
(41.0)
0.708
(18.0)
0.354
(9.0)
0.5
MT2
MT1
0.1 (2.54)
14.17(360.0)
(12.7)
0.2 (5.08)
Gate
0.157
DIA
(4.0)
Flat up
1.97
(50.0)
Dimensions
are in inches
(and millimeters).
Direction of Feed
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded
Meets all EIA-468-B 1994 Standards
0.02 (0.5)
0.236
(6.0)
0.098 (2.5) MAX
1.27
(32.2)
1.62
(41.2)
0.708
(18.0)
0.354
(9.0)
0.157
MT2
0.2 (5.08)
0.5
0.1 (2.54)
MT1
Gate
DIA
(4.0)
(12.7)
Flat down
25 Devices per fold
1.85
(47.0)
12.2
(310.0)
Dimensions
are in inches
(and millimeters).
1.85
(47.0)
13.3
(338.0)
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
40
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
1 Amp Sensitive & Standard Triacs
Compak Embossed Carrier Reel Pack (RP)
Meets all EIA-481-1 Standards
0.157
(4.0)
MT2
MT1
0.47
(12.0)
0.36
(9.2)
8.0
0.315
(8.0)
Gate
Cover tape
0.059
(1.5)
DIA
12.99
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
0.49
(12.4)
Direction of Feed
Part Numbering System
Part Marking System
L 4 01 E 3
TO-92 (E Package)
Compak (C Package)
L401E3
SENSITIVITY & TYPE
Sensitive Triac:
DEVICE TYPE
L
: Sensitive Triac
Q
: Triac
L4N3
yxxxx
3
: 3 mA (QI, II, III, IV)
5
:
5
mA (QI, II, III, IV)
6
:
5
mA (QI, II, III)
10 mA (QIV)
yxxxx
®
®
8
: 10 mA (QI, II, III)
20 mA (QIV)
Standard Triac:
3
: 10 mA (QI, II, III)
4
: 2
5
mA (QI, II, III)
VOLTAGE RATING
4
: 400V
6
: 600V
CURRENT RATING
01
: 1.0A (TO-92)
N
: 1.0A (Compak)
PACKAGE TYPE
Blank :
Compak (Surface Mount)
E :
TO-92
Lx01Ex & LxNx & Qx01Ex & QxNx Series
©2010 Littelfuse, Inc
41
Revised: March 31, 2010
03:44 PM
Specifications are subject to change without notice.
T
e
ccor
®
bran
d
T
hyristors
©2010 Littelfuse, Inc
42
Specifications are subject to change without notice.
Revised: March 31, 2010
03:44 PM
