Littelfuse-MCR08BT1G
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Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
RoHS
Pb
MCR08B, MCR08M
Description
PNPN devices designed for line powered consumer
applications such as relay and lamp drivers, small motor
controls, gate drivers for larger thyristors, and sensing and
detection circuits. Supplied in surface mount package for
use in automated manufacturing.
Features
• Sensitive
Gat
e
T
r
igger
Current
• Blocking
Voltage to 600 V
• Glass
Passivated Surface
for Reliability and
Uniformity
• Surface
Mount Package
• These
Devices are
Pb−Free and are RoHS
Compliant
Pin Out
Functional Diagram
4
2
G
A
K
1
3
Additional Information
Samples
Datasheet
Resources
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
Maximum Ratings
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
Symbol
V
DRM
V
a
lue
Unit
MCR08B
MCR08M
,
200
600
V
A
A
(−40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
V
RRM
On-State RMS Current
(All Conduction Angles
;
T
C
= 80°C)
I
T
0.8
(RMS)
Peak Non-Repetitive Surge Current
(1/2 Cycle Sine Wave, 60 Hz, T
C
= 25°C)
I
TSM
8.0
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power (T
C
= 80°C, t =
1
.
0 µs)
Average Gate Power (t = 8.3 ms, T
C
= 80°C)
Operating Junctio
n
T
e
mperature Range
Storag
e
T
e
mperature Range
I
2
t
P
GM
P
GM (AV)
T
J
0.4
0.1
A²sec
W
0.01
W
-40 to +125
-40 to +150
°C
T
stg
°C
Thermal Characteristics
Rating
Symbol
V
a
lue
Unit
Thermal Resistance, Junction−to−Case (AC) PCB Mounted per Figure 1
R
8JC
R
8JT
T
L
2.2
25
°C/W
°C/W
°C
Thermal Resistance, Junction−to−
T
a
b Measured on Anod
e
T
a
b Adjacent to Compound
Maximum Devic
e
T
e
mperature for Soldering Purposes (for 10 Seconds Maximum)
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1.
V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Electrical Characteristics
–
OFF
(T
J
= 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Symbol
I
DRM
Min
T
y
p
Max
Unit
,
T
J
= 25°C
–
–
–
–
10
μA
Peak Repetitive Forward or Reverse Blocking Current (Note 3) (V
AK
= Rated
V
DRM
or V
RRM
, R
GK
= 1 kΩ
T
J
= 125°C
200
mA
I
RRM
Electrical Characteristics
–
ON
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
T
y
p
Max
Unit
Peak Forward On-State Voltage (Note 2) (I
T
=
1
.
0 A Peak)
Gat
e
T
r
igger Current
(Continuous dc) (Note 4) (V
AK
= 12 Vdc,
R
L
= 1
0
0 Ω)
Gat
e
T
r
igger Voltage (Continuous dc)
(V
D
= 12 V,
R
L
= 1
0
0 Ω)
Holding Current (Note 3) (V
AK
= 12 Vdc, Initiating Current = 20 mA)
T
u
rn−O
n
T
ime (V
AK
= 12 Vdc, I
TM
= 5 Adc, IGT = 5 mA)
V
TM
I
GT
−
−
−
−
−
−
−
1
.
7
200
5.0
0.8
−
V
mA
mA
V
I
H
−
V
GT
tgt
−
1
.
25
µs
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3.
RGK = 1000 Q is included in measurement.
4.
RGK is not included in measurement.
Dynamic Characteristics
Characteristic
Symbol
Min
10
T
y
p
−
Max
−
Unit
V/µs
Critical Rate-of-Rise of Off State Voltage
(Vpk = Rated VDRM, TC =
1
1
0
°C, RGK = 1 kΩ, Exponential Method)
dv/dt
di/dt
Critical Rate of Rise of On−State Current
(IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA
−
−
50
A/ms
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
V
o
ltage Current Characteristic of SCR
+Current
Symbol
Parameter
Anode+
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
V
TM
on state
I
H
I
RRM
a
t
V
RRM
Holding Current
+Voltage
I
DRM
a
t
V
DRM
Forward Blocking Region
(Off State)
Forward Blocking Region
(Off State)
Reverse Avalanche Region
Anode-
Figure 1. PCB fo
r
T
hermal Impedance and Powe
r
T
e
sting of SO
T
–
223
0.15
3.8
0.079
2.0
0.244
0.091 0.091
6.2
2.3
2.3
0.079
2.0
inches
mm
0.059 0.059 0.059
1.5
1.5
1.5
0.984
25.0
0.096
2.44
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
0.472
12.0
Board mounted vertically cinch 8840 edge connector.
Board Thickness = 65Mil.
Foil Thickness = 2.5Mil.
Material: G10 Fiberglass Base Epoxy
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
Figure 3. Junction to Ambien
t
T
hermal Resistance vs
Figure 2. On-State Characteristics
Coppe
r
T
a
b Area
10
1.0
0.1
TYPICAL AT T
= 1
1
0
ϒ
C
J
MAX AT T
=
1
1
0
ϒ
C
J
MAX AT T = 2
5
ϒ
C
J
0.01
0
1.0
2.03
.0
4.0
v
T
Figure 4. Current Derating, Minimum Pad Size Reference:
Ambien
t
T
e
mperature
Figure 5. Current Derating, 1.0 cm Square Pad Reference:
Ambien
t
T
e
mperature
1
1
0
1
1
0
2
1.0 cm FOIL, 50 OR
100
90
80
70
60
50
40
100
60 Hz HALF
W
A
VE
α
dc
50 OR 60 Hz HALF
W
A
VE
α =
CONDUCTION
90
ANGLE
18
0
°
12
0
°
80
dc
70
18
0
°
α
= 3
0
°
6
0
°
60
12
0
°
50
α
= 3
0
°
9
0
°
40
6
0
°
α
9
0
°
30
α =
CONDUCTION
30
ANGLE
20
20
0
0.1
0.2
0.3
0.4
0.4
0.5
0
0.1
0.2
0.3
0.5
I
I
T(AV)
Figure 6. Current Derating, 2.0 cm Square Pad Reference:
Ambien
t
T
e
mperature
Figure
7
.
C
urrent Derating Reference: Anod
e
T
a
b
1
1
0
1
1
0
2
PAD AREA = 4.0 c
m
,
5
0
OR 60 Hz HALF
W
A
VE
50 OR 60 Hz HALF
W
A
VE
18
0
°
dc
dc
100
90
80
70
60
50
18
0
°
12
0
°
12
0
°
α
= 3
0
°
α
= 3
0
°
6
0
°
6
0
°
9
0
°
9
0
°
α
α
α =
CONDUCTION
α =
CONDUCTION
ANGLE
ANGLE
85
0
0.1
0.2
0.3
0.4
0
0.1
0.2
0.3
0.4
0.5
0.5
I
I
T(AV)
T(AV)
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
Figure 9
.
T
hermal Response Device Mounted on Figure 1
Printed Circuit Board
Figure 8. Power Dissipation
1.0
0.9
1.0
α
α
= 3
0
°
6
0
°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
α =
CONDUCTION
ANGLE
9
0
°
0.1
dc
18
0
°
12
0
°
0.01
0.4
0.5
0
0.1
0.2
0.3
0.0001
0.0
0
1
0
.011
0.1
.0
10
100
I
t, TIME (SECONDS)
T(AV)
Figure 11
.
T
y
pical Normalized Holding Current vs Junction
T
e
mperature
Figure 10
.
T
y
pical Gat
e
T
r
igge
r
V
o
ltage vs Junctio
n
T
e
mperature
0.7
V
AK
= 12V
0.6
0.5
0.4
0.3
R =
100
L
-40-
20
04
20
06
0
80
1
1
0
T ,
JUNCTION TEMPER
A
T
URE,
ϒ
(
C
)
J
Figure 12
.
T
y
pical Range o
f
V
GT
versus Measured I
GT
Figure 13
.
T
y
pical Gat
e
T
r
igger Current vs Junctio
n
T
e
mperature
0.7
0.65
0.6
0.55
0.5
V
= 12V
AK
0.45
0.4
R =
100
T =
2
5
ϒ
C
J
L
0.35
0.3
0.1
1.0
10
100
1000
I ,
GATE TRIGGER CURRENT (
A)
GT
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
Figure 15. Exponential Static dv/dt vs. Junctio
n
T
e
mperature
and Gate-Cathod
e
T
e
rmination Resistance
Figure 14. Holding Current Range vs Gate-Cathode Resistance
10000
5000
1000
500
100
50
100
V
= 400V
pk
T =
2
5
ϒ
C
J
10
1.0
0.1
I
GT
= 48
A
T =
2
5
°
J
I
GT
= 7
A
10
12
5
°
5
0
°
5.0
1
1
0
°
1.0
7
5
°
0.5
0.1
10
100
1000
10,000
100,0
0
0
1.0
10
R
100
1000
10,000
100,0
0
0
R
GK
Figure 16. Exponential Static dv/dt vs Pea
k
V
o
ltage and
Gate-Cathod
e
T
e
rmination Resistance
Figure 1
7
.
E
xponential Static dv/dt vs Gate-Cathode
Capacitance and Resistance
10000
300V
10000
T =
1
1
0
°
C
J
T =
1
1
0
°
C
J
1000
500
100
50
1000
500
100
50
400 V (PEAK)
200V
100V
400V
R
= 1
0
0
50V
GK
500V
100
10
10
R
= 1.0k
GK
.0
5.0
1.0
5.0
1.0
R
= 10k
GK
10
1000
10,0
0
0
0.01
0.11
10
100
R
C
GK
GK
Figure 18. Exponential Static dv/dt vs Gate-Cathode
T
e
rmination Resistance and Produc
t
T
r
igger Current Sensitivity
10000
1000
500
100
50
I
GT
= 70
A
10
I
GT
= 5
A
I
GT
= 35
A
5.0
1.0
I
= 15
A
GT
10
100
1000
10,000
100,0
0
0
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
Thyristors
Surface Mount – 600V – 800V > MCR08B, MCR08M
Dimensions
Soldering Footprint
D
3. 8
0.15
b1
2. 0
0.079
4
H
E
e1
E
12
3
6. 3
0.248
2. 3
0.091
2. 3
0.091
b
e
C
2. 0
A
0.079
0.08 (0003
)
A1
L1
mm
inches
1. 5
0.059
SCALE 6
:1
Inches
Nom
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
−
Millimeters
Nom
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
Part Marking System
Dim
Min
Max
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
Min
Max
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
A
A1
b
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
4
b1
c
SOT-223
Case 318E
Style 10
AYW
CR08x
D
1
E
1
e
e1
L1
H
E
9
CR08c =
Device Code
x =
B or M
A =
Assembly Location
Y =
Y
e
ar
W =
Work Week
■
= Pb-Free
Packaging
1.
Dimensions and Tolerancing per Ansi Y14.5M. 1982.
2.
Controlling Dimension: Inch.
Note:
Microdot may be in either location
Pin Assignment
Ordering Information
1
2
3
4
Cathode
Anode
Gate
Device
Package
Shipping
SO
T
–
223
(Pb-Free)
SO
T
–
223
(Pb-Free)
MCR08BT1G
MCR08MT1G
1
0
00/
T
a
pe & Reel
1
0
00/
T
a
pe & Reel
Anode
Disclaimer Notice –
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:
www.littelfuse.com/disclaimer-electronics
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BA.08/26/20
