Littelfuse-S4004DS1TP

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Littelfuse-S4004DS1TP
                                                                
                                                                                       
T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Sxx04xSx Series  
Description  
Excellent unidirectional switches for phase control  
applications such as heating and motor speed controls.  
Sensitive gate SCRs are easily triggered with microAmps  
of current as furnished by sense coils, proximity switches,  
and microprocessors.  
Features & Benefits  
tꢀ  
tꢀ  
3P)4ꢀDPNQMJBOU  
tꢀ  
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ  
UPꢀꢁꢂꢂꢀ7  
(MBTTꢀoꢀQBTTJWBUFEꢀ  
junctions  
tꢀ  
30 A  
4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ  
Main Features  
Applications  
T
y
pical applications are capacitive discharge systems for  
strobe lights, nailers, staplers and gas engine ignition. Also  
controls for power tools, home/brown goods and white  
goods appliances.  
Symbol  
I

T(RMS)  

Value  
4
Unit  
A
7

DRM

ꢃ7

RRM  

I

(5  

400 to 600  
50 to 500  
7
μA  
Schematic Symbol  
A
K
G
Absolute Maximum Ratings  
Symbol  
Parameter  
T
e
st Conditions  
Value  
Unit  
I

T(RMS)  

I

5ꢄ”7ꢅ  

RMS on-state current  
T

C

= 95°C  
4
A
Average on-state current  
T

C

= 75°C  
2.5  
A
A
TJOHMFꢀIBMGꢀDZDMFꢆꢀGꢀꢇꢀꢈꢂ)[ꢆ  
25  
T (initial) = 25°C  
J
I

TSM  

Peak non-repetitive surge current  
TJOHMFꢀIBMGꢀDZDMFꢆꢀGꢀꢇꢀꢁꢂ)[ꢆ  
30  
T (initial) = 25°C  
J
I

2

t  
I

2

Uꢀ7BMVFꢀGPSꢀGVTJOH  
Critical rate of rise of on-state current  
Peak gate current  
t

p

= 8.3 ms  
3.7  
50  
A

2

s  
A/μs  
A
di/dt  
I

(.  

Gꢀꢇꢀꢁꢂ)[ꢀꢆ
ꢀ
5
=
1
1
0
°C  
J
T =
1
1
0
°C  
1
J
P

(ꢄ”7ꢅ  

T

stg  

Average gate power dissipation  
Storage temperature range  
T =
 
1
1
0
°C  
0.1  
W
J
-40 to 150  
-40 to
1
10  
°C  
T
Operating junction temperature range  
°C  
J
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
209  
Revised: July 29, 2010
 
09:54 AM  

T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Electrical Characteristics —
(T =
 
25°C, unless otherwise specified)  
J
Value  
Symbol  
I

(5  

T
e
st Conditions  
Unit  
Sxx04xS1  
Sxx04xS2  
MAX.  
MAX.  
TY
P
.  
50  
200  
ꢀA  
7
7

D

ꢀꢇꢀꢁ7ꢆꢀꢀ3

L

= 1
0
0
8
 
7

D

ꢀꢇꢀ7

DRM

; R

(,

= 1kΩ  
7

(5  

dv/dt  
7

(%  

7

(3.  

I

)  

0.8  
8
7ꢃçT  
7
7

D

ꢀꢇꢀ7

DRM

; R

L

= 3.3 k
8
; T =
1
1
0
°C  
MIN.  
MIN.  
MAX.  
MAX.  
TY
P
.  
0.2  
6
J
I

(3

= 10ꢀA  
I

T

= 20mA (initial);
 
R

(,

= 1kohm  
(1)  
7
4
3
6
4
mA  
μs  
μs  
t

q  

50  
t

gt  

I

(

= 2 x I

(
5

; PW
 
= 15ꢀs;
 
I

T

= 8A  
Notes :  
xx = voltage, x = package  
(1) I

T

=2A; t

p

ꢇꢈꢂ˜TꢆꢀEWꢃEUꢇꢈ7ꢃ˜TꢆꢀEJꢃEUꢇꢉꢊꢂ”ꢃ˜T  
Static Characteristics  
Symbol  
T
e
st Conditions  
Value  
Unit  
7

TM  

Sxx04xSy I

T

= 8A;
 
t

p

= 380 ꢀs  
MAX.  
MAX.  
1
.
6  
2
7
T = 25°C  
J
I

DRM

/ I

RRM  

7

DRM

ꢀꢃꢀ7

RRM

– R

(,

= 1kohm  
μA  
T =
1
1
0
°C  
1
0
0  
J
/PUFꢀꢋꢀYYꢀPSꢀ[ꢀꢇꢀWPMUBHFꢌꢀYꢀꢇꢀQBDLBHFꢌꢀZꢀꢇꢀTFOTJUJWJUZ  
Thermal Resistances  
Symbol  
Parameter  
Value  
3.8  
Unit  
4YYꢂꢍ74Z  
Junction to case (AC)  
Junction to ambient  
°C/W  
°C/W  
R

R
(J-C)  

Sxx04DSy  
3.0  
4YYꢂꢍ74Z  
85  
R

R
(J-A)  

Notes: xx = voltage, y = sensitivity  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
210  
Revised: July 29, 2010
 
09:54 AM  

T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Figure 1: Normalized DC Gat
e
T
r
igger Current  
vs. Junctio
n
T
e
mperature  
Figure 2: Normalized DC Gat
e
T
r
igge
r
V
o
ltage  
vs. Junctio
n
T
e
mperature  
4.0  
3.0  
2.0  
1.0  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-15  
10  
35  
60  
85  
110  
110  
4.0  
-40  
-15  
10  
35  
60  
85  
110  
Junction Temperature (T

J

) — (°C)  
Junction Temperature (T

J

) — (°C)  
Figure 3: Normalized DC Holding Current  
vs. Junctio
n
T
e
mperature  
Figure 4: Normalized DC Latching Current  
vs. Junctio
n
T
e
mperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-15  
10  
35  
60  
85  
110  
-40  
-15  
10  
35  
60  
85  
Junction Temperature (T

J

) — (°C)  
Junction Temperature (T

J

) — (°C)  
Figure 5: On-State Current vs. On-State  
V
o
ltage (
T
y
pical)  
Figure 6: Power Dissipation (
T
y
pical)  
vs. RMS On-State Current  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
25  
T

J

= 2
5
°C  
20  
15  
Sxx0
4
VSy  
Sxx0
4
DSy  
10  
Sxx0
4
VSy  
Sxx0
4
DSy  
1.5  
1.0  
0.5  
0.0  
5
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
RMS On-State Current [I

T(RMS)

] – (Amps)  
Instantaneous On-state Voltage (v) – Volts  
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Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
2
1
1  
Revised: July 29, 2010
 
09:54 AM  

T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Figure 7: Maximum Allowable Cas
e
T
e
mperature  
vs. RMS On-State Current  
Figure 8: Maximum Allowable Cas
e
T
e
mperature  
vs. Average On-State Current  
1
1
5  
110  
105  
1
0
0  
95  
1
1
5  
110  
Sxx0
4
VSy  
Sxx0
4
DSy  
Sxx0
4
VSy  
Sxx0
4
DSy  
105  
1
0
0  
95  
90  
90  
85  
85  
80  
80  
CURRENT WAVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
CURREN
T
W
AVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
75  
75  
70  
70  
0.0  
0.5  
1
.
0  
1
.
5  
2.0  
2.5  
3.0  
0.0  
0.5  
1
.
0  
1
.
5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Average On-State Current [I

T(
A
V
E)

] – Amps  
RMS On-State Current [I

T(RMS)

] – Amps  
Figure 9: Maximum Allowable Ambien
t
T
e
mperature  
vs. RMS On-State Current  
Figure 10: Maximum Allowable Ambien
t
T
e
mperature  
vs. Average On-State Current  
120  
120  
CURREN
T
W
AVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
CURRENT WAVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
FREE AIR R
A
T
ING  
1
0
0  
1
0
0  
80  
60  
40  
20  
0
FREE AIR R
A
T
ING  
80  
60  
Sxx0
4
VSy  
Sxx0
4
VSy  
40  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1
.
0  
1
.
2  
1
.
4  
0.0  
0.2  
0.4  
0.6  
0.8  
Average On-State Current [I

T(
A
V
E)

] – Amps  
RMS On-State Current [I

T(RMS)

] – Amps  
Figure 11: Peak Repetitive Capacitor Discharge Current  
Figure 12: Peak Repetitive Sinusoidal Pulse Current  
180  
160  
180  
160  
140  
140  
1 Hz  
120  
120  
12 Hz  
1 Hz  
1
0
0  
100  
60 Hz  
80  
60  
40  
20  
0
80  
12 Hz  
60  
I

TM  

I

TRM  

40  
60 Hz  
20  
t

W  

t

W  

0
1
10  
100  
1
10  
1
0
0  
Pulse Current Duration (t

W

) – μs  
Pulse Current Duration (t

W

) – μs  
Note: xx = voltage, y = sensitivity  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
212  
Revised: July 29, 2010
 
09:54 AM  

/PUFꢋꢀꢀ7ꢊꢀ‰ꢀꢂꢀ7ꢀUPꢀꢊꢂꢀ7ꢀEDꢀNFUFSꢀ  
                                                                    
ꢊꢎꢀ(BUFꢀDPOUSPMꢀNBZꢀCFꢀMPTUꢀEVSJOHꢀBOEꢀJNNFEJBUFMZꢀ  
                                                                                               
T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Figure 13: Surge Peak On-State Current vs. Number of Cycles  
1
0
0.0  
10.0  
1
.
0  
4611-:ꢀ’3&26&/$:ꢋꢀꢁꢂꢀ)[ꢀ4JOVTPJEBMꢀ  
LOAD: Resistive  
RMS On-State Current: [I

T(RMS)

]: Maximum Rated  
7BMVFꢀBUꢀ4QFDJmFEꢀ$BTFꢀ5FNQFSBUVSF  
Sxx0
4
VSy  
Sxx0
4
DSy  
Notes:  
following surge current interval.  
2. Overload may not be repeated until junction  
temperature has returned to steady-state  
rated value.  
0.1  
1
10  
1
0
0  
1
0
00  
Surge Current Duration — Full Cycles  
/PUFꢋꢀꢀYYꢀPSꢀ[ꢀꢉꢀWPMUBHFꢌꢀZꢀꢇꢀTFOTJUJWJUZ  
Figure 14: Simpl
e
T
e
st Circuit for Gat
e
T
r
igge
r
V
o
ltage and Current  
Reset  
Normally-closed  
Pushbutton  
7 ꢀ‰ꢀꢂꢀ7ꢀUPꢀꢊꢀ7ꢀEDꢀNFUFSꢀ  
I

(

(

ꢀ
‰

5

ꢀꢂꢀN”ꢀUPꢀꢊꢀꢀN”ꢀEDꢀNJMMJBNNFUFSꢀ  
3ꢊꢀ‰ꢀꢊꢀLꢀQPUFOUJPNFUFS  
To
m
easure gate trigger voltage and current, raise gate  
WPMUBHFꢀꢄ7 ꢅꢀVOUJMꢀNFUFSꢀSFBEJOHꢀ7ꢊꢀESPQTꢀGSPNꢀꢁꢀ7ꢀUPꢀꢊꢀ
7
ꢎ
ꢀ  
(BUFꢀUSJHH

(

F

5

SꢀWPMUBHFꢀJTꢀUIFꢀSFBEJOHꢀPOꢀ7

(5

ꢀKVTUꢀQSJPSꢀUPꢀ7ꢊꢀ  
ESPQQJOHꢎꢀ(BUFꢀUSJHHFSꢀꢀDVSSFOUꢀ*

(5

Can be computed from  
the relationship  
100  
+
–
D.U.
T
.  
V1  
6V

DC  

I

GT  

IN4001  
I

G  

R1  
100  
1 k  
(1%)  
7

(5  

V

GT  

____  
I

(5

= I

(

–  
Amps  
1
0
00  
where I

(

ꢀJTꢀSFBEJOHꢀꢄJOꢀBNQFSFTꢅꢀPOꢀNFUFSꢀKVTUꢀQSJPSꢀUPꢀ7ꢊꢀ  
dropping  
Note: I

(5

may turn out to be a negative quantity (trigger  
current flows out from gate lead). If negative current  
occurs, I
 
value is not a valid reading. Remove 1 k resistor  
and use
I

(

(

5

as the more correct I

(5

value. This will occur on  
12 ꢀA gate products.  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
213  
Revised: July 29, 2010
 
09:54 AM  

T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Soldering Parameters  
Reflow Condition  
1Cꢀoꢀ’SFFꢀBTTFNCMZ  
t

P  

T

P  

–
T
e
mperature Min (T

s(min)  

)
150°C  
Ramp-up  
T

L  

T

S(max)  

Pre Heat
 
–
T
e
mperature Max (T

s(max)  

-Time (min to max) (t

s

)  
)
200°C  
t

L  

ꢁꢂꢀoꢀꢊꢏꢂꢀTFDT  
Ramp-down  
Preheat  
Average ramp up rate (Liquidu
s
T
e
mp)  
(T

L

) to peak  
5°C/second max  
5°C/second max  
T

S(min)  

t

S  

T

S(max)

t
o
T

L

– Ramp-up Rate  
–
T
e
mperature (T

L

) (Liquidus)
 
217°C  
25  
Reflow  
time to peak temperature  
–
T
e
mperature (t

L

)  
ꢁꢂꢀoꢀꢊꢈꢂꢀTFDPOET  
Time  
Pea
k
T
e
mperature (T

P

)  
260

+0/-5

°C  
Time within
5
°C of actual peak  
T
e
mperature (t

p

)  
ꢐꢂꢀoꢀꢍꢂꢀTFDPOET  
Ramp-down Rate  
5°C/second max  
8 minutes Max.  
280°C  
Time 2
5
°C to pea
k
T
e
mperature (T

P

)  
Do not exceed  
Physical Specifications  
Environmental Specifications  
T
e
st  
Specifications and Conditions  
T
e
rminal Finish  
Body Material  
Lead Material  
1
0
0% Matt
e
T
in-plated  
MIL-STD-750, M-1040, Cond A Applied  
Peak AC voltage @ 125°C for 1008 hours ,  
R

(,

= 1kohms  
AC Blocking  
6-ꢀSFDPHOJ[FEꢀFQPYZꢀNFFUJOHꢀnBNNBCJMJUZꢀ  
DMBTTJmDBUJPOꢀꢓꢍ7ꢉꢂ  
MIL-STD-750, M-1051,  
T
e
mperature Cycling
 
1
0
0 cycles; -40°C to +150°C;  
Copper Alloy  
15-min dwell-time  
EIA / JEDEC, JESD22-A101  
T
e
mperature/  
ꢊ
ꢂ
ꢂꢏꢀIPVSTꢆꢀꢑꢐꢂ7ꢀꢉꢀ%$ꢋꢀꢏꢈ¡$ꢆꢀ  
Humidity  
85% rel humidity  
Design Considerations  
MIL-STD-750, M-1031,  
1
0
08 hours; 150°C  
Hig
h
T
e
mp Storage  
Careful selection of the correct device for the application
’
s  
operating parameters and environment will go a long way  
UPXBSEꢀFYUFOEJOHꢀUIFꢀPQFSBUJOHꢀMJGFꢀPGꢀUIF
ꢀ
5
IZSJTUPSꢎꢀ(PPEꢀ  
design practice should limit the maximum continuous  
current through the main terminals to 75% of the device  
rating. Other ways to ensure long life for a power discrete  
semiconductor are proper heat sinking and selection of  
voltage ratings for worst case conditions. Overheating,  
overvoltage (including dv/dt), and surge currents are  
the main killers of semiconductors. Correct mounting,  
soldering, and forming of the leads also help protect  
against component damage.  
Low-
T
e
mp Storage  
Thermal Shock  
1
0
08 hours; -40°C  
MIL-STD-750, M-1056  
10 cycles; 0°C to 100°C; 5-min dwelltime  
at each temperature; 10 sec (max) transfer  
time between temperature  
EIA / JEDEC, JESD22-A102  
168 hours (121°C at 2 ATMs) and  
ꢊ
ꢂ
ꢂꢒꢀ3ꢃ)  
Autoclave  
Resistance to  
Solder Heat  
MIL-STD-750 Method 2031  
Solderability  
Lead Bend  
ANSI/J-STD-002, category 3,
T
e
st A  
MIL-STD-750, M-2036 Cond E  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
214  
Revised: July 29, 2010
 
09:54 AM  

T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Dimensions
—
T
O-251AA (V/I-Package)
—
V
/I-
P
A
K
T
hrough Hole  
T

C

MEASURING POINT  
AREA: 0.040 IN

2  

Inches  
T
y
p  
Millimeters  
T
y
p  
Dimension  
Min  
Max  
0.050  
0.245  
0.375  
0.213  
0.265  
0.033  
0.093  
0.095  
0.184  
0.023  
0.044  
0.023  
0.052  
0.044  
0.044  
0.084  
Min  
1
.
02  
5.97  
8.89  
5.21  
6.48  
0.69  
2.21  
2.16  
4.47  
0.46  
0.97  
0.46  
1
.
06  
0.86  
0.86  
1
.
86  
Max  
1
.
27  
6.22  
9.53  
5.41  
6.73  
0.84  
2.36  
2.41  
4.67  
0.58  
1
.
12  
0.58  
1
.
32  
1
.
1
1  
E
H
J
5.28  
.208  
Anode  
A
D
A
B
C
D
E
F
0.040  
0.235  
0.350  
0.205  
0.255  
0.027  
0.087  
0.085  
0.176  
0.018  
0.038  
0.018  
0.042  
0.034  
0.034  
0.0
7
4  
0.044  
0.242  
0.361  
0.208  
0.262  
0.031  
0.090  
0.092  
0.180  
0.020  
0.040  
0.020  
0.047  
0.039  
0.039  
0.079  
1
.
1
1  
6.15  
9.18  
5.29  
6.66  
0.80  
2.28  
2.34  
4.57  
0.51  
1
.
01  
5.34  
.210  
B
R
P
Q
S
(
)
I
K
C
J
,
L
L
Cathode  
Anode  
GATE  
F
0.52  
1
.
20  
G
P
Q
R
S
I
1
.
00  
1
.
00  
1
.
1
1  
2.00  
2.
1
1  
Dimensions
—
T
O-252AA (D-Package) — D-
P
A
K Surface Mount  
E
D
Inches  
T
y
p  
Millimeters  
T
y
p  
6.71  
.264  
Anode  
5.28  
.208  
T

C

MEASURING POINT  
Dimension  
Min  
0.040  
0.235  
0.106  
0.205  
0.255  
0.027  
0.087  
0.085  
0.176  
0.018  
0.038  
0.018  
0.000  
0.021  
0°  
Max  
0.050  
0.245  
0.
1
13  
0.213  
0.265  
0.033  
0.093  
0.095  
0.184  
0.023  
0.044  
0.023  
0.004  
0.027  
5°  
Min  
1
.
02  
5.97  
2.69  
5.21  
6.48  
0.69  
2.21  
2.16  
4.47  
0.46  
0.97  
0.46  
0.00  
0.53  
0°  
Max  
1
.
27  
6.22  
2.87  
5.41  
6.73  
0.84  
2.36  
2.41  
4.67  
0.58  
1
.
12  
0.58  
0.10  
0.69  
5°  
A
B
6.71  
.264  
A
B
C
D
E
F
0.043  
0.243  
0.108  
0.208  
0.262  
0.031  
0.090  
0.092  
0.179  
0.020  
0.040  
0.020  
0.000  
0.026  
0°  
1
.
09  
5.34  
.210  
6.16  
2.
7
4  
1
.
60  
.063  
P
Q
C
1
.
80  
.071  
5.29  
6.65  
0.80  
2.28  
2.33  
4.55  
0.51  
1
.
02  
GATE  
F
AREA: 0.040 IN

2  

Cathode  
Anode  
3
.
1
1
8  
4.60  
.181  
G
I
L
(
)
I
O
H
K
J
M
N
J
,
L
0.51  
0.00  
0.67  
0°  
M
N
O
P
Q
0.042  
0.034  
0.047  
0.039  
0.052  
0.044  
1
.
06  
0.86  
1
.
20  
1
.
32  
1
.
1
1  
1
.
00  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
215  
Revised: July 29, 2010
 
09:54 AM  

T
e
ccor

®

bran
d
T
hyristors  
4 Amp Sensitive SCRs  
Product Selector  
Voltage  
Part Number  
Gate Sensitivity  
T
y
pe  
Package  
400V  
600V  
800V  
1
0
00V  
Sxx04DS1  
Sxx04DS2  
4YYꢂꢍ74ꢊ  
X
X
X
X
X
X
X
X
50μA  
200μA  
50μA  
Sensitive SCR  
Sensitive SCR  
Sensitive SCR  
Sensitive SCR  
TO-252  
TO-252  
TO-251  
TO-251  
4YYꢂꢍ74ꢐ  
200μA  
/PUFꢋꢀYYꢀꢇꢀ7PMUBHF  
Packing Options  
Part Number  
Marking  
Weight  
Packing Mode  
T
u
be  
Base Quantity  
Sxx04DSyTP  
Sxx04DSy  
Sxx04DSy  
4YYꢂꢍ74Z  
0.3g  
0.3g  
0.4g  
750 (75 per tube)  
2500  
Sxx04DSyRP  
Embossed Carrier  
T
u
be  
4YYꢂꢍ74Z51  
750 (75 per tube)  
Note: xx = voltage,
 
y = sensitivity  
TO-252 Embossed Carrier Reel Pack (RP) Specs  
Part Marking System  
TO-252AA – (D Package)  
TO-251AA – (V Package)  
0.059  
(
1
.
5)  
0.157  
(4.0)  
DIA  
Gate  
Cathode  
0.63  
(16.0)  
0.524  
(13.3)  
*
0.315  
(8.0)  
*
Cover tape  
Anode  
12.99  
(330.0)  
0.512 (13.0)  
Arbor Hole  
Diameter  
Part Numbering System  
Dimensions  
are in inches  
(and millimeters).  
S 6
0
0
4 V S1  
0.64  
(16.3)  
DEVICE TYPE  
S: SCR  
Direction of Feed  
SENSITIVITY & TYPE  
VOLTAGE RATING  
4: 400V  
6: 600V  
S1: 50  
A
μ
μ
S2: 200  
A
PACKAGE TYPE  
V: TO-251
 
(V/I-Pak)  
D: TO-252
 
(D-Pak)  
CURRENT RATING  
04: 4A  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
216  
Specifications are subject to change without notice.  
Revised: July 29, 2010
 
09:54 AM