Littelfuse-S6004VS1TP
| Part # | Littelfuse-S6004VS1TP |
Download  | Littelfuse-S6004VS1TP |
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Sxx04xSx Series
Description
Excellent unidirectional switches for phase control
applications such as heating and motor speed controls.
Sensitive gate SCRs are easily triggered with microAmps
of current as furnished by sense coils, proximity switches,
and microprocessors.
Features & Benefits
tꢀ
tꢀ
3P)4ꢀDPNQMJBOU
tꢀ
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ
UPꢀꢁꢂꢂꢀ7
(MBTTꢀoꢀQBTTJWBUFEꢀ
junctions
tꢀ
30 A
4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ
Main Features
Applications
T
y
pical applications are capacitive discharge systems for
strobe lights, nailers, staplers and gas engine ignition. Also
controls for power tools, home/brown goods and white
goods appliances.
Symbol
I
T(RMS)
Value
4
Unit
A
7
DRM
ꢃ7
RRM
I
(5
400 to 600
50 to 500
7
μA
Schematic Symbol
A
K
G
Absolute Maximum Ratings
Symbol
Parameter
T
e
st Conditions
Value
Unit
I
T(RMS)
I
5ꢄ”7ꢅ
RMS on-state current
T
C
= 95°C
4
A
Average on-state current
T
C
= 75°C
2.5
A
A
TJOHMFꢀIBMGꢀDZDMFꢆꢀGꢀꢇꢀꢈꢂ)[ꢆ
25
T (initial) = 25°C
J
I
TSM
Peak non-repetitive surge current
TJOHMFꢀIBMGꢀDZDMFꢆꢀGꢀꢇꢀꢁꢂ)[ꢆ
30
T (initial) = 25°C
J
I
2
t
I
2
Uꢀ7BMVFꢀGPSꢀGVTJOH
Critical rate of rise of on-state current
Peak gate current
t
p
= 8.3 ms
3.7
50
A
2
s
A/μs
A
di/dt
I
(.
Gꢀꢇꢀꢁꢂ)[ꢀꢆ
ꢀ
5
=
1
1
0
°C
J
T =
1
1
0
°C
1
J
P
(ꢄ”7ꢅ
T
stg
Average gate power dissipation
Storage temperature range
T =
1
1
0
°C
0.1
W
J
-40 to 150
-40 to
1
10
°C
T
Operating junction temperature range
°C
J
Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
209
Revised: July 29, 2010
09:54 AM
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Electrical Characteristics —
(T =
25°C, unless otherwise specified)
J
Value
Symbol
I
(5
T
e
st Conditions
Unit
Sxx04xS1
Sxx04xS2
MAX.
MAX.
TY
P
.
50
200
ꢀA
7
7
D
ꢀꢇꢀꢁ7ꢆꢀꢀ3
L
= 1
0
0
8
7
D
ꢀꢇꢀ7
DRM
; R
(,
= 1kΩ
7
(5
dv/dt
7
(%
7
(3.
I
)
0.8
8
7ꢃçT
7
7
D
ꢀꢇꢀ7
DRM
; R
L
= 3.3 k
8
; T =
1
1
0
°C
MIN.
MIN.
MAX.
MAX.
TY
P
.
0.2
6
J
I
(3
= 10ꢀA
I
T
= 20mA (initial);
R
(,
= 1kohm
(1)
7
4
3
6
4
mA
μs
μs
t
q
50
t
gt
I
(
= 2 x I
(
5
; PW
= 15ꢀs;
I
T
= 8A
Notes :
xx = voltage, x = package
(1) I
T
=2A; t
p
ꢇꢈꢂTꢆꢀEWꢃEUꢇꢈ7ꢃTꢆꢀEJꢃEUꢇꢉꢊꢂ”ꢃT
Static Characteristics
Symbol
T
e
st Conditions
Value
Unit
7
TM
Sxx04xSy I
T
= 8A;
t
p
= 380 ꢀs
MAX.
MAX.
1
.
6
2
7
T = 25°C
J
I
DRM
/ I
RRM
7
DRM
ꢀꢃꢀ7
RRM
– R
(,
= 1kohm
μA
T =
1
1
0
°C
1
0
0
J
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Thermal Resistances
Symbol
Parameter
Value
3.8
Unit
4YYꢂꢍ74Z
Junction to case (AC)
Junction to ambient
°C/W
°C/W
R
R
(J-C)
Sxx04DSy
3.0
4YYꢂꢍ74Z
85
R
R
(J-A)
Notes: xx = voltage, y = sensitivity
Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
210
Revised: July 29, 2010
09:54 AM
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Figure 1: Normalized DC Gat
e
T
r
igger Current
vs. Junctio
n
T
e
mperature
Figure 2: Normalized DC Gat
e
T
r
igge
r
V
o
ltage
vs. Junctio
n
T
e
mperature
4.0
3.0
2.0
1.0
0.0
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
110
110
4.0
-40
-15
10
35
60
85
110
Junction Temperature (T
J
) — (°C)
Junction Temperature (T
J
) — (°C)
Figure 3: Normalized DC Holding Current
vs. Junctio
n
T
e
mperature
Figure 4: Normalized DC Latching Current
vs. Junctio
n
T
e
mperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
110
-40
-15
10
35
60
85
Junction Temperature (T
J
) — (°C)
Junction Temperature (T
J
) — (°C)
Figure 5: On-State Current vs. On-State
V
o
ltage (
T
y
pical)
Figure 6: Power Dissipation (
T
y
pical)
vs. RMS On-State Current
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
25
T
J
= 2
5
°C
20
15
Sxx0
4
VSy
Sxx0
4
DSy
10
Sxx0
4
VSy
Sxx0
4
DSy
1.5
1.0
0.5
0.0
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
RMS On-State Current [I
T(RMS)
] – (Amps)
Instantaneous On-state Voltage (v) – Volts
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Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
2
1
1
Revised: July 29, 2010
09:54 AM
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Figure 7: Maximum Allowable Cas
e
T
e
mperature
vs. RMS On-State Current
Figure 8: Maximum Allowable Cas
e
T
e
mperature
vs. Average On-State Current
1
1
5
110
105
1
0
0
95
1
1
5
110
Sxx0
4
VSy
Sxx0
4
DSy
Sxx0
4
VSy
Sxx0
4
DSy
105
1
0
0
95
90
90
85
85
80
80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
CURREN
T
W
AVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
75
75
70
70
0.0
0.5
1
.
0
1
.
5
2.0
2.5
3.0
0.0
0.5
1
.
0
1
.
5
2.0
2.5
3.0
3.5
4.0
4.5
Average On-State Current [I
T(
A
V
E)
] – Amps
RMS On-State Current [I
T(RMS)
] – Amps
Figure 9: Maximum Allowable Ambien
t
T
e
mperature
vs. RMS On-State Current
Figure 10: Maximum Allowable Ambien
t
T
e
mperature
vs. Average On-State Current
120
120
CURREN
T
W
AVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
FREE AIR R
A
T
ING
1
0
0
1
0
0
80
60
40
20
0
FREE AIR R
A
T
ING
80
60
Sxx0
4
VSy
Sxx0
4
VSy
40
20
0
0.0
0.2
0.4
0.6
0.8
1
.
0
1
.
2
1
.
4
0.0
0.2
0.4
0.6
0.8
Average On-State Current [I
T(
A
V
E)
] – Amps
RMS On-State Current [I
T(RMS)
] – Amps
Figure 11: Peak Repetitive Capacitor Discharge Current
Figure 12: Peak Repetitive Sinusoidal Pulse Current
180
160
180
160
140
140
1 Hz
120
120
12 Hz
1 Hz
1
0
0
100
60 Hz
80
60
40
20
0
80
12 Hz
60
I
TM
I
TRM
40
60 Hz
20
t
W
t
W
0
1
10
100
1
10
1
0
0
Pulse Current Duration (t
W
) – μs
Pulse Current Duration (t
W
) – μs
Note: xx = voltage, y = sensitivity
Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
212
Revised: July 29, 2010
09:54 AM
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ꢊꢎꢀ(BUFꢀDPOUSPMꢀNBZꢀCFꢀMPTUꢀEVSJOHꢀBOEꢀJNNFEJBUFMZꢀ
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Figure 13: Surge Peak On-State Current vs. Number of Cycles
1
0
0.0
10.0
1
.
0
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LOAD: Resistive
RMS On-State Current: [I
T(RMS)
]: Maximum Rated
7BMVFꢀBUꢀ4QFDJmFEꢀ$BTFꢀ5FNQFSBUVSF
Sxx0
4
VSy
Sxx0
4
DSy
Notes:
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
0.1
1
10
1
0
0
1
0
00
Surge Current Duration — Full Cycles
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Figure 14: Simpl
e
T
e
st Circuit for Gat
e
T
r
igge
r
V
o
ltage and Current
Reset
Normally-closed
Pushbutton
7 ꢀꢀꢂꢀ7ꢀUPꢀꢊꢀ7ꢀEDꢀNFUFSꢀ
I
(
(
ꢀ
5
ꢀꢂꢀN”ꢀUPꢀꢊꢀꢀN”ꢀEDꢀNJMMJBNNFUFSꢀ
3ꢊꢀꢀꢊꢀLꢀQPUFOUJPNFUFS
To
m
easure gate trigger voltage and current, raise gate
WPMUBHFꢀꢄ7 ꢅꢀVOUJMꢀNFUFSꢀSFBEJOHꢀ7ꢊꢀESPQTꢀGSPNꢀꢁꢀ7ꢀUPꢀꢊꢀ
7
ꢎ
ꢀ
(BUFꢀUSJHH
(
F
5
SꢀWPMUBHFꢀJTꢀUIFꢀSFBEJOHꢀPOꢀ7
(5
ꢀKVTUꢀQSJPSꢀUPꢀ7ꢊꢀ
ESPQQJOHꢎꢀ(BUFꢀUSJHHFSꢀꢀDVSSFOUꢀ*
(5
Can be computed from
the relationship
100
+
–
D.U.
T
.
V1
6V
DC
I
GT
IN4001
I
G
R1
100
1 k
(1%)
7
(5
V
GT
____
I
(5
= I
(
–
Amps
1
0
00
where I
(
ꢀJTꢀSFBEJOHꢀꢄJOꢀBNQFSFTꢅꢀPOꢀNFUFSꢀKVTUꢀQSJPSꢀUPꢀ7ꢊꢀ
dropping
Note: I
(5
may turn out to be a negative quantity (trigger
current flows out from gate lead). If negative current
occurs, I
value is not a valid reading. Remove 1 k resistor
and use
I
(
(
5
as the more correct I
(5
value. This will occur on
12 ꢀA gate products.
Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
213
Revised: July 29, 2010
09:54 AM
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Soldering Parameters
Reflow Condition
1Cꢀoꢀ’SFFꢀBTTFNCMZ
t
P
T
P
–
T
e
mperature Min (T
s(min)
)
150°C
Ramp-up
T
L
T
S(max)
Pre Heat
–
T
e
mperature Max (T
s(max)
-Time (min to max) (t
s
)
)
200°C
t
L
ꢁꢂꢀoꢀꢊꢏꢂꢀTFDT
Ramp-down
Preheat
Average ramp up rate (Liquidu
s
T
e
mp)
(T
L
) to peak
5°C/second max
5°C/second max
T
S(min)
t
S
T
S(max)
t
o
T
L
– Ramp-up Rate
–
T
e
mperature (T
L
) (Liquidus)
217°C
25
Reflow
time to peak temperature
–
T
e
mperature (t
L
)
ꢁꢂꢀoꢀꢊꢈꢂꢀTFDPOET
Time
Pea
k
T
e
mperature (T
P
)
260
+0/-5
°C
Time within
5
°C of actual peak
T
e
mperature (t
p
)
ꢐꢂꢀoꢀꢍꢂꢀTFDPOET
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 2
5
°C to pea
k
T
e
mperature (T
P
)
Do not exceed
Physical Specifications
Environmental Specifications
T
e
st
Specifications and Conditions
T
e
rminal Finish
Body Material
Lead Material
1
0
0% Matt
e
T
in-plated
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours ,
R
(,
= 1kohms
AC Blocking
6-ꢀSFDPHOJ[FEꢀFQPYZꢀNFFUJOHꢀnBNNBCJMJUZꢀ
DMBTTJmDBUJPOꢀꢓꢍ7ꢉꢂ
MIL-STD-750, M-1051,
T
e
mperature Cycling
1
0
0 cycles; -40°C to +150°C;
Copper Alloy
15-min dwell-time
EIA / JEDEC, JESD22-A101
T
e
mperature/
ꢊ
ꢂ
ꢂꢏꢀIPVSTꢆꢀꢑꢐꢂ7ꢀꢉꢀ%$ꢋꢀꢏꢈ¡$ꢆꢀ
Humidity
85% rel humidity
Design Considerations
MIL-STD-750, M-1031,
1
0
08 hours; 150°C
Hig
h
T
e
mp Storage
Careful selection of the correct device for the application
’
s
operating parameters and environment will go a long way
UPXBSEꢀFYUFOEJOHꢀUIFꢀPQFSBUJOHꢀMJGFꢀPGꢀUIF
ꢀ
5
IZSJTUPSꢎꢀ(PPEꢀ
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Low-
T
e
mp Storage
Thermal Shock
1
0
08 hours; -40°C
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwelltime
at each temperature; 10 sec (max) transfer
time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
ꢊ
ꢂ
ꢂꢒꢀ3ꢃ)
Autoclave
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
Lead Bend
ANSI/J-STD-002, category 3,
T
e
st A
MIL-STD-750, M-2036 Cond E
Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
214
Revised: July 29, 2010
09:54 AM
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Dimensions
—
T
O-251AA (V/I-Package)
—
V
/I-
P
A
K
T
hrough Hole
T
C
MEASURING POINT
AREA: 0.040 IN
2
Inches
T
y
p
Millimeters
T
y
p
Dimension
Min
Max
0.050
0.245
0.375
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.044
0.023
0.052
0.044
0.044
0.084
Min
1
.
02
5.97
8.89
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.97
0.46
1
.
06
0.86
0.86
1
.
86
Max
1
.
27
6.22
9.53
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1
.
12
0.58
1
.
32
1
.
1
1
E
H
J
5.28
.208
Anode
A
D
A
B
C
D
E
F
0.040
0.235
0.350
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.038
0.018
0.042
0.034
0.034
0.0
7
4
0.044
0.242
0.361
0.208
0.262
0.031
0.090
0.092
0.180
0.020
0.040
0.020
0.047
0.039
0.039
0.079
1
.
1
1
6.15
9.18
5.29
6.66
0.80
2.28
2.34
4.57
0.51
1
.
01
5.34
.210
B
R
P
Q
S
(
)
I
K
C
J
,
L
L
Cathode
Anode
GATE
F
0.52
1
.
20
G
P
Q
R
S
I
1
.
00
1
.
00
1
.
1
1
2.00
2.
1
1
Dimensions
—
T
O-252AA (D-Package) — D-
P
A
K Surface Mount
E
D
Inches
T
y
p
Millimeters
T
y
p
6.71
.264
Anode
5.28
.208
T
C
MEASURING POINT
Dimension
Min
0.040
0.235
0.106
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.038
0.018
0.000
0.021
0°
Max
0.050
0.245
0.
1
13
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.044
0.023
0.004
0.027
5°
Min
1
.
02
5.97
2.69
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.97
0.46
0.00
0.53
0°
Max
1
.
27
6.22
2.87
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1
.
12
0.58
0.10
0.69
5°
A
B
6.71
.264
A
B
C
D
E
F
0.043
0.243
0.108
0.208
0.262
0.031
0.090
0.092
0.179
0.020
0.040
0.020
0.000
0.026
0°
1
.
09
5.34
.210
6.16
2.
7
4
1
.
60
.063
P
Q
C
1
.
80
.071
5.29
6.65
0.80
2.28
2.33
4.55
0.51
1
.
02
GATE
F
AREA: 0.040 IN
2
Cathode
Anode
3
.
1
1
8
4.60
.181
G
I
L
(
)
I
O
H
K
J
M
N
J
,
L
0.51
0.00
0.67
0°
M
N
O
P
Q
0.042
0.034
0.047
0.039
0.052
0.044
1
.
06
0.86
1
.
20
1
.
32
1
.
1
1
1
.
00
Sxx04xSx Series
©2010 Littelfuse, Inc
Specifications are subject to change without notice.
215
Revised: July 29, 2010
09:54 AM
T
e
ccor
®
bran
d
T
hyristors
4 Amp Sensitive SCRs
Product Selector
Voltage
Part Number
Gate Sensitivity
T
y
pe
Package
400V
600V
800V
1
0
00V
Sxx04DS1
Sxx04DS2
4YYꢂꢍ74ꢊ
X
X
X
X
X
X
X
X
50μA
200μA
50μA
Sensitive SCR
Sensitive SCR
Sensitive SCR
Sensitive SCR
TO-252
TO-252
TO-251
TO-251
4YYꢂꢍ74ꢐ
200μA
/PUFꢋꢀYYꢀꢇꢀ7PMUBHF
Packing Options
Part Number
Marking
Weight
Packing Mode
T
u
be
Base Quantity
Sxx04DSyTP
Sxx04DSy
Sxx04DSy
4YYꢂꢍ74Z
0.3g
0.3g
0.4g
750 (75 per tube)
2500
Sxx04DSyRP
Embossed Carrier
T
u
be
4YYꢂꢍ74Z51
750 (75 per tube)
Note: xx = voltage,
y = sensitivity
TO-252 Embossed Carrier Reel Pack (RP) Specs
Part Marking System
TO-252AA – (D Package)
TO-251AA – (V Package)
0.059
(
1
.
5)
0.157
(4.0)
DIA
Gate
Cathode
0.63
(16.0)
0.524
(13.3)
*
0.315
(8.0)
*
Cover tape
Anode
12.99
(330.0)
0.512 (13.0)
Arbor Hole
Diameter
Part Numbering System
Dimensions
are in inches
(and millimeters).
S 6
0
0
4 V S1
0.64
(16.3)
DEVICE TYPE
S: SCR
Direction of Feed
SENSITIVITY & TYPE
VOLTAGE RATING
4: 400V
6: 600V
S1: 50
A
μ
μ
S2: 200
A
PACKAGE TYPE
V: TO-251
(V/I-Pak)
D: TO-252
(D-Pak)
CURRENT RATING
04: 4A
Sxx04xSx Series
©2010 Littelfuse, Inc
216
Specifications are subject to change without notice.
Revised: July 29, 2010
09:54 AM
