Littelfuse-S8X8ES1
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Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
Sx
X
8
xSx Ser
i
e
s
EV Ser
i
e
s
0.8 A Sens
i
t
i
ve SCRs
Product Descr
i
p
t
i
o
n
T
h
i
s
n
ew component ser
i
e
s offers h
i
g
h stat
i
c
d
v/dt
and
l
o
w turn off t
i
m
e
(
t
q) sens
i
t
i
ve SCR. It is
spec
i
fi
c
a
l
ly
d
es
i
g
ned for Ground Fau
l
t Circuit
I
n
terrupter
(
GFCI) and Gas Ignition
app
l
i
c
at
i
o
ns.
A
ll
S
CRs junctions are glass-
pass
i
vat
e
d to ensure
l
o
ng term re
l
i
a
b
i
li
t
y and
parametr
i
c
s
tab
i
li
t
y.
F
e
atures
•
Surge capab
i
li
t
y > 10 A
•
Blocking voltage (
V
DRM
/
V
RRM
) capab
i
li
t
y up to
800 V
A
g
ency
A
p
prova
l
s
a
nd Env
i
ron
m
ental
E
n
vironm ental Approvals
•
High dv/dt noi
s
e
i
m
mun
i
t
y
•
I
m
proved turn
–
o
ff t
i
m
e
(
t
q
) <
25 µ
s
ec
•
Sens
i
t
i
ve gate for dir
e
ct m
i
c
roprocessor
i
n
terface
•
T
h
rough
–
h
o
l
e
a
nd surface
–
m
ount packages
•
RoHS comp
l
i
a
nt and Ha
l
o
gen
–
Fr
e
e
Product Summary
C
h
aracteristic
V
a
l
u
e
0.8
Unit
A
A
p
p
l
i
c
at
i
o
ns
I
T(RMS)
T
h
e Sx
X
8
xSx EV
ser
i
e
s
i
s
s
pec
i
fi
c
a
l
ly
d
es
i
g
ned for
Ground Fault Circuit Int
e
r
rupter
(
GFCI) and gas
i
g
n
i
t
i
o
n app
l
i
c
at
i
o
ns.
V
DRM
/
V
RRM
I
GT
400, 600, or 800
5 to 200
V
µA
Schemat
i
c
S
ymbol
1
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
1. Max
i
m
um Rat
i
n
gs………………………………………………………………………………………………………………………….3
2.
T
h
ermal Character
i
s
t
i
c
s ………………………………………………………………………………………………………………….3
3. El
e
ctr
i
c
al Character
i
s
t
i
c
s
(T
J
= 25 °C un
l
e
ss otherw
i
s
e spec
i
fi
e
d)
………………………………………………………..3
4. Stat
i
c Characterist
i
c
s
(T
J
= 25 °C un
l
e
ss otherw
i
s
e spec
i
fi
e
d
)
……………………………………………………………..3
5. Performance Curves ………………………………………………………………………………………………………………………4
6. So
l
d
er
i
n
g Parameters …………………………………………………………………………………………………………………….7
7. Phys
i
c
al Spec
i
fi
c
at
i
o
ns……………………………………………………………………………………………………………………7
8. Environmental Spec
i
fi
c
at
i
o
ns…………………………………………………………………………………………………………..7
9. Des
i
g
n Cons
i
d
erat
i
o
ns ……………………………………………………………………………………………………………………8
10. Package D
i
m
ens
i
o
ns ……………………………………………………………………………………………………………………9
11. Part Number
i
n
g and Mark
i
n
g……………………………………………………………………………………………………….10
12. Product Se
l
e
ctor ………………………………………………………………………………………………………………………..11
13. Pack
i
n
g Opt
i
o
ns …………………………………………………………………………………………………………………………11
14. Pack
i
n
g Spec
i
fi
c
at
i
o
ns ………………………………………………………………………………………………………………..11
2
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
1. Max
i
m
um Rat
i
n
gs
Sym bol
C
h
aracteristic
C
o
nd
i
tions
V
a
l
u
e
Unit
T
O
–
9
2
SO
T
–
8
9
SO
T
–
2
23
T
O
–
9
2
SO
T
–
8
9
SO
T
–
2
23
T
C
= 55 °C
T
C
= 60 °C
T
L
= 60 °C
T
C
= 55 °C
T
C
= 60 °C
T
L
= 60 °C
I
T(RMS)
RMS On
–
s
tate Current
(
Full Sine Wav
e
)
Av
e
r
age On
–
s
tate Current
0.8
A
I
T(AV)
0.51
A
T
O
–
9
2
SO
T
–
8
9
SO
T
–
2
23
t
p
= 10 ms
t
p
= 8.3 ms
T
O
–
9
2
f = 50 Hz
f = 60 Hz
8
Non-r
e
pet
i
t
i
ve Surge P
e
ak On
–
s
tate Current
(
S
i
n
g
l
e Cycl
e
,
T
J
,
I
n
i
t
i
a
l
= 25 °C)
I
T
S
M
I
2
t
A
10
f = 50 Hz
f = 60 Hz
0.32
0.41
I
2
t
V
a
l
u
e for Fus
i
n
g
A
2
s
Critical Rate
of Ri
s
e of On
–
s
tate Current
I
G
=
10 mA
d
i
/dt
SO
T
–
8
9
SO
T
–
2
23
T
J
= 125 °C
50
A/µs
I
GM
P
G(AV)
T
S
T
G
T
J
Peak Gate Current
t
p
= 10 µs
T
J
= 125 °C
1.0
A
W
°C
°C
Av
e
r
age Gate Power D
i
s
s
i
p
at
i
o
n
Storage Junct
i
o
n
T
e
mpe
r
ature Range
Operat
i
n
g Junct
i
o
n
T
e
mpe
r
ature Range
–
–
–
T
J
= 125 °C
0.1
–
–
–
4
0 to 150
–
4
0 to 125
2.
T
h
ermal Character
i
s
t
i
c
s
Sym bol
C
h
aracteristic
V
a
l
u
e
Unit
T
O
–
9
2
SO
T
–
2
23
SO
T
–
8
9
T
O
–
9
2
75
30
50
1
R
th
(
J
C
)
T
h
ermal Res
i
s
tance,
j
u
nct
i
o
n
–
t
o
–
c
ase
(
AC)
T
h
ermal Res
i
s
tance,
j
u
nct
i
o
n
–
t
o
–
a
mb
i
e
nt
I
T
= 0.8 A
I
T
= 0.8 A
°C/W
(RMS)
150
1
R
th
(
J
A
)
SO
T
–
2
23
SO
T
–
8
9
60
90
°C/W
(RMS)
Note 1: 60 Hz AC r
e
s
i
s
t
i
ve load condition, 100% conduct
i
o
n
3. El
e
ctr
i
c
al Character
i
s
t
i
c
s
(T
J
= 25 °C un
l
e
ss otherw
i
s
e spec
i
fi
e
d)
SxX8yS1
Typ Max Min
SxX8yS2
Typ Max Min
SxX8yS
Typ Max
Sym bol
D
e
scription
C
o
nd
i
tions
Unit
Min
I
GT
V
GT
DC Gate Trigg
e
r
C
urr
e
nt
DC Gate Trigg
e
r
V
o
l
t
age
Peak Reverse Gate
V
o
l
t
age
V
D
= 6
V
,
R
L
= 10
V
D
= 6
V
,
R
L
= 10
I
RG
= 10 µA
0.5
5
0.8
–
1
–
50
0.8
–
15
–
200
0.8
–
µA
V
–
–
–
–
V
GRM
5
5
5
V
R
GK
,
I
H
Holding Curr
e
nt
–
5
–
–
5
–
–
5
–
mA
I
n
i
t
i
a
l current = 20 A
Critical Rat
e
–
o
f-ri
s
e
of
Off-
s
tage
V
o
l
t
age
T
J
= 125 °C,
V
D
=
V
DRM
/V
,
RRM
(
d
v/dt)s
75
75
75
V
/
µs
R
GK
t
q
t
gt
T
u
rn-off Ti
m
e
T
J
= 25 °C @
600
V
,
R
GK
–
–
30
–
–
–
25
–
–
–
25
–
µs
µs
V
T
u
rn-on Ti
m
e
I
G
= 10 mA P
W
T
= 1.6
A
PK
= 125 °C
2
2
2
,
V
GD
Gate Non-trigger
V
o
l
t
age
V
D
=
V
DRM
, R
GK
= 1
0.2
–
0.2
–
0.2
–
J
Note: x =
vo
l
t
age /100, y = package
4. Stat
i
c Characteristics
(T
J
= 25 °C un
l
e
ss otherw
i
s
e spec
i
fi
e
d)
V
a
l
u
e
Unit
Sym bol
D
e
scription
Peak On
–
s
tate
V
o
l
t
age
Off-
s
tate Current, Peak Repet
i
t
i
ve
C
o
nd
i
tions
Min
Max
1.70
3
V
TM
I
TM
= 1.6
A
pk
–
–
–
V
T
J
= 25 °C @
V
D
=
V
DRM
, R
GK
T
J
= 125 °C @
V
D
=
V
DRM
, R
GK
I
DRM
µA
500
3
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
5. Performance Curves
Figure 1. Normaliz
e
d
D
C Gate Trigg
e
r
C
urr
e
nt for
A
ll
Q
uadrants
v
s
. Junct
i
o
n
T
e
mpe
r
ature
Figure 2. Normaliz
e
d
D
C Holding Curr
e
nt vs. Junct
i
o
n
T
e
mpe
r
ature
2.0
1.5
1.0
0.5
0.0
4.0
3.0
2.0
1.0
0.0
–
5
5
–
4
0
–
2
5
–
1
0
5
20 35 50 65 80 95
110 125
–
5
5
–
4
0
–
2
5
–
1
0
5
20 35 50 65 80 95
110 125
J
u
nction
Tem perature, T
J
(°C)
J
u
nction
Tem perature, T
J
(°C)
Figure 3. Normaliz
e
d
D
C Gate Trigg
e
r
V
o
l
t
age vs. Junct
i
o
n
T
e
mpe
r
ature
Figure 4. Typical On-
s
tate Current vs. On
–
s
tate
V
o
l
t
age
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
8
Sx
X
8
xS1
6
Sx
X
8
xS
4
Sx
X
8
xS2
2
0
–
4
0
–
2
5
–
1
0
5
20 35 50 65 80 95
110 125
0.7
1.1
1.5
1.9
2.3
2.7
3.1
3.5
J
u
nction
Tem perature, T
J
(°C)
I
n
stantaneous On
–
s
tate
V
o
l
tage,
V
T
(V)
4
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
Figure 5. Typical Power Dissipation vs. RMS On-state Current
Figure 6. Maxi
m
um
A
ll
o
wab
l
e Ca
s
e
T
e
mpe
r
ature vs. On
–
s
tate
Curr
e
nt
0.8
130
120
110
100
0.7
Curr
e
nt Waveform: S
i
n
uso
i
d
al
L
o
ad: REs
i
s
t
i
ve or Inductive
Conduct
i
o
n
A
n
g
l
e
: 180
°
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
O
–
9
2
90
SO
T
–
8
9 and SO
T
–
2
23
80
Curr
e
nt Waveform: S
i
n
uso
i
d
al
70
L
o
ad: Res
i
s
t
i
ve or Inductive
Conduct
i
o
n
A
n
g
l
e
: 180
°
Case
T
e
mpe
r
ature: Measured as
shown on d
i
m
ens
i
o
nal draw
i
n
gs
60
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-state Current,
I
T(RM
S
)
(A)
RMS On-state Current,
I
T(RM
S
)
(A)
Figure 7. Typical DC Gate Trigg
e
r
C
urr
e
nt w
i
t
h R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S6
X
8
xS
Figure 8. Typical DC Gate Trigg
e
r
C
urr
e
nt w
i
t
h R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S8
X
8
xS
100
100
R
GK
=
=
R
GK
=
10
1
10
1
R
GK
=
R
GK
R
GK
=
R
GK
=
R
GK
=
R
GK
=
0.1
0.01
0.1
0.01
No R
GK
No R
GK
85
–
4
0
–
1
5
10
35
60
110
135
–
4
0
–
1
5
10
35
60
85
110
135
J
u
nction
Tem perature, T
J
(°C)
J
u
nction
Tem perature, T
J
(°C)
Figure 9. Typical DC Holding Curr
e
nt w
i
t
h R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S6
X
8
xS
Figure 10. Typical DC Holding Curr
e
nt w
i
t
h R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S8
X
8
xS
1000
100
R
GK
R
GK
=
100
=
10
R
GK
R
GK
=
R
GK
=
=
10
1
R
GK
=
R
GK
=
1
R
GK
=
No R
GK
No R
GK
0.1
0.1
–
4
0
–
1
5
10
35
60
85
110
135
–
4
0
–
1
5
10
35
60
85
110
135
J
u
nction
Tem perature, T
J
(°C)
J
u
nction
Tem perature, T
J
(°C)
5
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
Figure 11. Typical DC Static dv/dt with R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S6
X
8
xS
Figure 12. Typical DC Static dv/dt with R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S8
X
8
xS
10000
10000
R
GK
=
=
R
GK
=
1000
100
10
1000
100
10
R
GK
R
GK
=
=
R
GK
R
GK
=
=
R
GK
R
GK
=
25
45
65
85
105
125
25
45
65
85
105
125
J
u
nction
Tem perature, T
J
(°C)
J
u
nction
Tem perature, T
J
(°C)
Figure 13. Typical DC Turn-off Ti
m
e w
i
t
h R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S6
X
8
xS
Figure 14. Typical DC Turn-off Ti
m
e w
i
t
h R
GK
v
s
. Junct
i
o
n
T
e
mpe
r
ature for S8
X
8
xS
22
20
26
24
22
R
GK
=
18
16
14
12
10
8
R
GK
=
20
18
16
14
12
10
8
R
GK
=
R
GK
=
R
GK
=
R
GK
=
R
GK
=
R
GK
=
6
6
4
4
2
2
0
0
–
4
0
–
1
5
10
35
60
85
110
135
–
4
0
–
1
5
10
35
60
85
110
135
J
u
nction
Tem perature, T
J
(°C)
J
u
nction
Tem perature, T
J
(°C)
Figure 15. Surge Peak On
–
s
tate Current vs. Number of Cyc
l
e
s
Notes
1. Gate control may be
l
o
st dur
i
n
g and
i
m
med
i
a
te
l
y
follo
w
i
n
g surge current
i
n
terva
l
.
10
2. Over
l
o
ad may not be repeated unt
i
l j
u
nct
i
o
n
tempe
r
ature has returned to steady
–
s
tate rated va
l
u
e.
0.8 A Components
Supp
l
y Fr
e
quency: 60 Hz S
i
n
uso
i
d
al
L
o
ad: Res
i
s
t
i
ve
RMS Onstate Current
[
I
T,RMS
]:
M
ax rated va
l
u
e
at spec
i
fic
c
ase temperature
1
1
10
100
1000
Surge
C
u
rrent
D
u
ration – Full Cycle
6
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
Figure 16. Peak Repet
i
t
i
ve Sinu
s
o
i
d
al Pu
l
s
e
C
urr
e
nt
.
180
160
140
120
100
80
1 Hz
12 Hz
60
40
60 Hz
20
0
1
10
100
Pulse Current Duration, t
w
(µ
s
)
6. So
l
d
er
i
n
g Parameters
Param eter
V
a
l
u
e
Pb
–
fr
e
e
A
s
semb
l
y
150 °C
R
e
f
low Condition
T
e
mpe
r
ature M
i
n
,
T
S
(
M
i
n
)
Pre
–
H
e
at
T
e
mpe
r
ature Max, T
S
(
Max)
Ti
m
e
(
M
i
n
t
o Max
)
,
t
s
200 °C
60 to 180 s
5 °C/s (Max)
5 °C/s (Max)
217 °C
Av
e
r
age Ramp
–
u
p Rate
L
i
q
u
i
d
us
T
e
mp.,
T
L
to peak
T
S
(
Max)
to
T
L
Ramp
–
u
p Rate
T
e
mpe
r
ature,
T
L
Li
q
u
i
d
us
R
e
f
low
Ti
m
e, t
S
60 to 150 s
260 °C (
±
5
°
C)
20 to 40 s
Peak
T
e
mpe
r
ature,
T
P
Ti
m
e w
i
t
h
i
n 5 °C of Actual Peak Temperature, t
P
Ramp
–
d
own Rate
5 °C/s (Max)
8
m
i
n
utes
(
M
ax)
280 °C
Ti
m
e 25 °C to Peak
T
e
mpe
r
ature,
T
P
Do Not Exc
e
ed
7. Phys
i
c
al Spec
i
fications
8. Environmental Spec
i
fi
c
at
i
o
ns
D
e
vice Feature
D
e
ta
i
l
100% Matte
T
i
n
–
p
l
a
ted
T
e
st
Spec
i
fic
a
tions and Conditions
M
I
L-
S
T
D-750, M-1040, Cond A Applied Peak
AC voltage @
110°C for 1008 hours
M
I
L-
S
T
D-750, M-1051, 100 cycles; -40°C to
+150°C; 15 m
i
n
d
we
l
l
t
i
m
e
EIA /
J
E
DEC,
J
E
SD22-A101 1008 hours;
320V – DC: 85°C; 85%
re
l
a
t
i
ve hu
m
i
d
i
t
y
T
e
r
m
i
n
al Fini
s
h
Body Mater
i
a
l
L
e
ad Mater
i
a
l
AC Blocking
UL R
e
cogn
i
z
e
d
C
ompound meet
i
n
g F
l
a
mmab
i
li
t
y
Rat
i
n
g
V
-0
T
e
mpe
r
ature Cycling
T
e
mpe
r
ature/Hum
i
d
i
t
y
Copper
A
ll
o
y
High-t
e
mp Storage
L
o
w
–
t
emp Storage
M
I
L-
S
T
D-750, M-1031, 1008 hours, 150°C
1008 hours,
–
4
0°C
R
e
s
i
s
tance to So
l
d
er
H
e
at
M
I
L-
S
T
D-750 M
e
thod 2031
So
l
d
erab
i
li
t
y
L
e
ad Bend
ANSI/
J
–
S
T
D-002, category 3,
T
e
st A
M
I
L-
S
T
D-750, M-2036 Cond E
7
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
9. Des
i
g
n Cons
i
d
erat
i
o
ns
Car
e
f
ul se
l
e
ct
i
o
n of the correct component for the
w
i
ll
g
o a
l
o
ng way toward extend
i
n
g the operat
i
n
g
l
ife
of the
T
h
yri
s
tor. Good des
i
g
n pract
i
c
e shou
l
d li
m
i
t
t
he
max
i
m
um cont
i
n
uous current through the ma
i
n
term
i
n
a
l
s
t
o 75% of the component rat
i
n
g. Other
ways to ensure
l
o
ng
l
ife for a po
w
er d
i
s
crete
sem
i
c
onductor are proper heat s
i
n
k
i
n
g and se
l
e
ct
i
o
n
of vo
l
t
age rat
i
n
gs for worst case cond
i
t
i
o
ns.
Overheat
i
n
g, overvo
l
t
age
(
i
n
c
l
u
d
i
n
g dv/dt), and surge
currents are the ma
i
n kill
e
r
s of sem
i
c
onductors.
Corr
e
ct mount
i
n
g, so
l
d
er
i
n
g, and form
i
n
g of the
l
e
ads
a
l
s
o he
l
p
p
rotect aga
i
n
st component damage.
8
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
10. Package D
i
m
ens
i
o
ns
TO-92
Millim
e
ters
I
n
ches
Dim
e
ns
i
o
n
Min
4.450
4.320
12.700
3.430
3.180
2.040
0.407
1.150
2.420
0.380
Max
5.200
5.330
–
Min
Max
0.205
0.210
–
A
B
C
D
E
F
0.175
0.170
0.500
0.135
0.125
0.080
0.016
0.045
0.095
0.015
–
–
4.190
2.660
0.533
1.390
2.660
0.500
0.165
0.105
0.021
0.055
0.105
0.020
G
H
I
J
SOT-223
Millim
e
ters
Typ
I
n
ches
Typ
Dim
e
ns
i
o
n
Min
6.30
3.30
–
Max
6.70
3.70
1.80
0.10
3.15
0.85
–
Min
0.248
0.130
–
Max
0.264
0.146
0.071
0.004
0.124
0.034
–
A
B
C
D
E
F
6.50
3.50
–
0.256
0.138
–
0.02
2.90
0.60
–
–
0.001
0.114
0.024
–
–
3.00
0.70
2.30
4.60
7.00
0.26
0.118
0.027
0.090
0.181
0.276
0.010
G
H
I
–
–
–
–
6.70
0.24
7.30
0.35
0.264
0.009
0.287
0.014
J
*Di
m
ens
i
o
ns
i
n
m
i
lli
m
ete
r
s (inch
e
s)
K
10
°
M
A
X
9
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
SOT-89
Millim
e
ters
I
n
ches
Dim
e
ns
i
o
n
Min
4.40
2.29
1.40
3.94
0.81
–
Typ
Max
4.60
2.60
1.60
4.25
1.20
–
Min
0.173
0.090
0.055
0.155
0.032
–
Typ
Max
0.181
0.102
0.063
0.167
0.047
–
A
B
C
D
E
F
–
–
–
–
–
–
–
–
–
–
0.059
0.118
–
1.50
G
H
I
–
3
–
–
–
0.35
0.36
–
–
–
0.44
0.48
–
0.014
0.014
–
0.017
0.019
–
–
J
1.65
0.065
*Di
m
ens
i
o
ns
i
n
m
i
lli
m
ete
r
s (inch
e
s)
11. Part Number
i
n
g and Mark
i
n
g
10
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
12. Product Se
l
e
ctor
V
o
l
tage
Part Num
ber
Gate Sensitivity
Package
400 V
600 V
X
800 V
Sx
X
8
BS
Sx
X
8
ES
X
–
200 µA
200 µA
200 µA
5 µA
SO
T
–
8
9
T
O
–
9
2
X
X
X
X
X
X
X
X
X
X
X
–
Sx
X
8
T
S
X
SO
T
–
2
23
SO
T
–
8
9
T
O
–
9
2
Sx
X
8
BS1
Sx
X
8
ES1
Sx
X
8
T
S
1
Sx
X
8
BS2
Sx
X
8
ES2
Sx
X
8
T
S
2
X
X
X
X
–
5 µA
X
5 µA
SO
T
–
2
23
SO
T
–
8
9
T
O
–
9
2
X
50 µA
50 µA
50 µA
X
X
X
X
SO
T
–
2
23
13. Pack
i
n
g Opt
i
o
ns
Part Num
ber
Marking
Weight
Packing Mode
Bulk
B
a
se Quant
i
ty
2500
Sx
X
8
ESy
Sx
X
8
ESy
Sx
X
8
ESy
Sx
X
8
ESy
Sx
X
8
T
S
y
x
X
8
y
0.217 g
0.217 g
0.217 g
0.120 g
0.053 g
0.053 g
Sx
X
8
ESyAP
Sx
X
8
ESyRP
Sx
X
8
T
S
yRP
Sx
X
8
BSyRP
Sx
X
8
BSyRP1
A
m
mo Pack
T
a
pe &
Reel
T
a
pe &
Reel
T
a
pe &
Reel
T
a
pe &
Reel
2000
2000
1000
1000
x
X
8
y
1000
Note: x = vo
l
t
age/100, y = gate sens
i
t
i
vity
14. Pack
i
n
g Spec
i
fications
TO-92 (3-l
e
ad)
R
e
el Pack (RP) Radial
L
e
aded Spec
i
fic
a
tions
Meets a
l
l
EIA-
4
68
–
C
S
tandards
11
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
TO-92 (3-l
e
ad)
A
m m o Pack (AP) Radial
L
e
aded Spec
i
fic
a
tions
Meets a
l
l
EIA-
4
68
–
C
S
tandards
SOT-89 Reel Pack (RP) Specifications
12
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
Sx
X
8
xSx
T
h
yri
s
tor
D
a
tasheet
SOT-89 Reel Pack (RP1) Specifications
SOT-223 Reel Pack (RP) Specifications
Di
s
claim er
Notice –
Li
t
te
l
fu
s
e products are not des
i
g
ned for, and sha
l
l
n
ot be used for, any purpose
(
i
n
c
l
u
d
i
n
g, w
i
t
hout
l
i
m
i
t
at
i
o
n, automot
i
v
e
, m
i
li
t
ary, aerospace, med
i
c
a
l
, lif
e
–
sav
i
n
g,
l
if
e
–
s
usta
i
n
i
n
g or nuc
l
e
ar fac
i
li
t
y app
l
i
c
at
i
o
ns, dev
i
c
es
i
n
tended for surg
i
c
al
i
m
p
l
a
nt
i
n
to the body, or any other app
l
i
c
at
i
o
n
i
n
w
h
i
c
h the fa
i
l
u
re or
l
a
ck of des
i
r
e
d operat
i
o
n of
the product may resu
l
t in
p
ersonal
i
n
j
u
ry, death, or property damage) other than those express
l
y forth in applicable Litt
e
l
f
u
se p
r
oduct documentat
i
o
n.
L
i
t
te
l
fu
s
e sha
l
l
n
ot be
l
i
a
b
l
e for
any c
l
a
i
m
s or damages ar
i
s
i
n
g out of products used
i
n
a
pp
l
i
c
at
i
o
ns not express
l
y i
n
tended by
L
i
t
te
l
fu
s
e as set
f
orth in applicable Litt
e
l
fu
s
e documentat
i
o
n.
13
Spec
i
fi
c
at
i
o
ns are sub
j
e
ct to change w
i
t
hout not
i
c
e.
© 2021
L
i
t
te
l
fu
s
e,
I
n
c.
R
e
v
i
s
ed: 6
/
11/2021
