Littelfuse-T2500DG
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T2500D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Features
•
Blocking
V
o
ltage 400 V
TRIACS
6 AMPERES RMS
400 VOLTS
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
High Surge Current Capability 60 A Peak at T
= 80
°
C
C
•
Pb−Free Package is Available*
MT2
MT1
G
MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Rating
Symbol
Value
Unit
(Sine Wave 50 to 60 Hz,
T =
−40 to +100
°
C, Gate Open)
J
V
V
400
V
DRM,
RRM
MARKING
DIAGRAM
On−State RMS Current (T
= +80
°
C)
I
6.0
60
A
A
C
T(RMS)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current
I
TSM
T2500DG
AYWW
(One Full Cycle, 60 Hz, T
= +80
°
C)
C
2
2
Circuit Fusing Considerations (t = 8.3 ms)
I t
15
16
A s
TO−220AB
CASE 221A
STYLE 4
1
Peak Gate Power
(T =
+80
°
C, Pulse Width = 10
m
sec)
C
P
W
W
GM
Average Gate Power
P
0.2
G(AV)
(T =
+80
°
C, t = 8.3 ms)
C
A
Y
= Assembly Location
=
Y
e
ar
Peak Gate Current (Pulse Width = 10
m
sec)
Operating Junction
T
e
mperature Range
Storage
T
e
mperature Range
I
4.0
A
GM
WW =
Work Week
= Pb−Free Package
T
J
−40 to +125
−40 to +150
°
C
°
C
G
T
stg
THERMAL CHARACTERISTICS
PIN ASSIGNMENT
Characteristic
Symbol
Max
2.7
Unit
°
C/W
°
C
1
2
3
4
Main
T
e
rminal 1
Thermal Resistance, Junction−to−Case
R
q
JC
L
Main
T
e
rminal 2
Gate
Maximum Lead
T
e
mperature for Soldering
Purposes 1/8
″
from Case for 10 Seconds
T
260
Main
T
e
rminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
1. V
, V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Device
Package
Shipping
T2500D
TO220AB
500 Units / Box
500 Units / Box
T2500DG
TO220AB
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting
T
e
chniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
April, 2006 − Rev. 4
T2500/D
T2500D
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted; Electricals apply in both directions)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current T
= 25
°
C
I
I
,
−
−
10
2.0
m
A
mA
J
DRM
(Rated V
, V
; Gate Open) T
= 100
°
C
DRM
RRM
J
RRM
ON CHARACTERISTICS
V
TM
−
−
2.0
V
(I =
“
30 A Peak)
TM
Gate Trigger Current (Continuous dc)
I
mA
GT
(V =
12 Vdc, R
= 100
W
)
D
L
MT2(+), G(+)
−
−
−
−
10
20
15
30
25
60
25
60
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc) (All Four Quadrants)
(V =
12 Vdc, R
= 100
W
)
V
−
0.2
−
1.25
2.5
V
V
GT
D
L
Gate Non−Trigger Voltage
V
GD
−
−
(V =
12
V
, R
=
1
00
W
, T
= 100
°
C)
D
L
C
Holding Current
I
15
30
−
mA
m
s
H
(Main
T
e
rminal Voltage = 12 Vdc, Gate Open, Initiating Current =
“
200 mA)
Gate Controlled Turn-On Time
t
−
1.6
gt
(Rated V
, I
= 10 A , I
= 160 mA, Rise Time = 0.1
m
s)
T GT
DRM
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Commutation Voltage
dv/dt(c)
dv/dt
−
−
10
75
−
−
V/
m
s
V/
m
s
(Rated V
, I
= 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized,
DRM T(RMS)
T
C
= 80
°
C)
Critical Rate-of-Rise of Off-State Voltage
(Rated V
, Exponential Voltage Rise, Gate Open, T
= 100
°
C)
DRM
C
2. Pulse
T
e
st: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
2
T2500D
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
Main
T
e
rminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
H
I
at V
DRM
DRM
I
H
Quadrant 3
Main
T
e
rminal 2 −
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(−) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
−
+ I
GT
GT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) I
(−) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
3
T2500D
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION
Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
B
F
C
T
S
INCHES
DIM MIN
MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
4
3
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
R
L
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 4:
PIN 1.
MAIN TERMINAL 1
2. MAIN
TERMINAL 2
3. GATE
4. MAIN
TERMINAL 2
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).
SCILLC reserves the right to make changes without further notice
to any products herein.
SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.
All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights
nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal
Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800−282−9855
T
o
ll Free
USA/Canada
Literature Distribution Center for ON Semiconductor
P
.
O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone
: 480−829−7710 or 800−344−3860
T
o
ll Free USA/Canada
Fax
: 480−829−7709 or 800−344−3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
Japan
: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku,
T
o
kyo, Japan 153−0051
Phone
: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
T2500/D
