LOWPOWER-LPM2301B3F
| Part # | LOWPOWER-LPM2301B3F |
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Preliminary Datasheet
LPM2301
LPM2301 -20V/-2A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
-20V/-2.0A,R
DS(ON)
=170m
Ω
(typ.)@VGS=-2.5V
The LPM2301 is the P-channel logic enhancement
mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
-20V/-2.0A,R
DS(ON)
=130m
Ω
(typ.)@VGS=-4.5V
Super high density cell design for extremely low
R
DS(ON)
SOT23 Package
These devices are particularly suited for low voltage
application, notebook computer power management
and other battery powered circuits where high-side
switching.
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Ordering Information
LPM2301
–
□ □
□
Marking Information
F: Pb-Free
Device
Marking
A1sHB
Package
SOT23
Shipping
3K/REEL
LPM2301B3F
Package Type
B3: SOT23
Pin Configurations
S
D
(SOT-23)
TOP VIEW
G
S
D
G
LPM2301
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00
Jun.-2018
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Preliminary Datasheet
LPM2301
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
Maximum
Units
Parameter
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
-20
±
12
V
V
T
A
=25
°
C
-2
Continuous Drain
T
A
=70
°
C
Current A
-1.5
A
I
DM
P
D
Pulsed Drain Current B
-8
T
A
=25
°
C
T
A
=70
°
C
1.25
0.8
Power Dissipation A
W
T
J
, T
STG
Junction and Storage Temperature Range
-55 to 150
°
C
Thermal Characteristics
Parameter
Symbol
Typ.
Units
°
C/W
°
C/W
°
C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t
≤
10s
130
160
80
R
θ
JA
R
θ
JL
Steady-State
Steady-State
LPM2301
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Jun.-2018
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Preliminary Datasheet
LPM2301
Functional Pin Description
Symbol
Parameter
Condition
Min
Typ.
Max
Units
STATIC PARAMETERS
Drain-Source
Breakdown
BV
DSS
I
D
=-250
μ
A, V
GS
=0V
-20
V
Voltage
-1
V
DS
=-20V, V
GS
=0V
uA
I
DSS
Zero Gate Voltage Drain Current
T
J
=55
°
C
-10
±
1
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
V
DS
=0V, V
GS
=
±
12V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, I
D
=-2A
uA
V
V
GS(th)
-0.4
-1
m
Ω
130
170
10
Static
Drain-Source
R
DS(ON)
On-Resistance
V
GS
=-2.5V, I
D
=-2A
V
DS
=-5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
m
Ω
S
g
FS
Forward Transconductance
Diode Forward Voltage
V
SD
-0.7
-1
V
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
pF
pF
pF
400
220
80
V
GS
=0V,
f=1MHz
V
DS
=-15V,
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
7
nC
nC
nC
V
GS
=-10V,
I
D
=-2A
V
DS
=-15V,
V
DS
=-15V,
Q
gs
Gate Source Charge
1.2
Q
gd
Gate Drain Charge
Turn-On DelayTime
1.8
15
36
t
D(on)
V
GS
=-10V,
R
L
=3.6
Ω
,
R
GEN
=6
Ω
t
r
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
nS
t
D(off)
t
f
42
34
LPM2301
–
00
Jun.-2018
Page 3 of 5
Preliminary Datasheet
LPM2301
LPM2301
–
00
Jun.-2018
Page 4 of 5
Preliminary Datasheet
LPM2301
Packaging Information
LPM2301
–
00
Jun.-2018
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