LOWPOWER-LPM9021QVF
| Part # | LOWPOWER-LPM9021QVF |
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Preliminary Datasheet
LPM9021
Single P-Channel, -12V, -6.5A, Power MOSFET
General Description
Features
Trench Technology
Super high density cell design
The LPM9021 is P-Channel enhancement MOSFET
Effect Transistor. It uses advanced trench technology
and design to provide excellent RDS (ON) with low
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2*2-6L
gate charge. This device is suitable for using in DC-DC
conversion, power switch and charging circuit.
Standard Product LPM9021QVF is Pb-free and
Halogen-free.
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Order Information
LPM9021
□ □
□
F: Pb-Free
Charging
Package Type
QV: DFN2*2-6L
Marking Information
Device
Marking
Package
Shipping
Pin Configurations
LPM9021QVF
DFN2*2-6L 3K/REEL
D
D
S
6
5
4
Pin Description
Pin Number
Pin Description
Drain Pin
1,2
3
D
S
Gate Pin
4
Source Pin
Drain Pin
5,6
1
D
2
D
3
G
LPM9021-01
May.-2013
Page 1 of 7
Preliminary Datasheet
LPM9021
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
10 S
Steady State
Unit
V
-12
VGS
Gate-Source Voltage
±
12
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
T
A
=25
°
C
T
A
=70
°
C
Continuous Drain Current
Maximum Power Dissipation
Continuous Drain Current
Maximum Power Dissipation
-6.5
-5.2
1.9
-5.6
-4.4
1.4
A
W
A
ID
PD
ID
1.2
0.9
-4.8
-3.8
1.0
-3.9
-3.9
0.6
W
PD
0.6
0.4
IDM
TJ
Pulsed Drain Current c
-24
150
A
Operating Junction Temperature
Lead Temperature
°
C
°
C
°
C
TL
260
Tstg
Storage Temperature Range
-55 to 150
Thermal resistance ratings
Parameter
Symbol
Typical
49
Maximum Unit
64
Junction-to-Ambient Thermal Resistance
t
≤
10 s
R
θ
JA
R
θ
JA
R
θ
JC
°
C/W
Steady State
66
84
88
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
t
≤
10 s
118
Steady State
Steady State
125
32
180
42
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380
μ
s, Duty Cycle<2%
d Maximum junction temperature TJ=150
°
C.
LPM9021-01
May.-2013
Page 2 of 7
Preliminary Datasheet
LPM9021
Electrical Characteristics
Parameter
Symbol
Test Condition
Min
Typ.
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BV
DSS
I
DSS
V
GS
= 0 V, I
D
= -250uA
-12
V
V
DS
=-12V, V
GS
= 0V
V
DS
= 0 V, V
GS
=
ꢀ
12V
uA
nA
-1
I
GSS
±
100
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
b, c
Forward Transconductance
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -4.5V, I
D
= -5.5A
V
GS
= -2.5V, I
D
= -2.5A
V
GS
= -1.8V, I
D
= -1.8A
V
GS
= -1.5V, I
D
= -1.5A
-0.4
-0.52
23
-0.9
29
V
30
39
m
Ω
39
50
48
90
g
FS
V
DS
=-5.0V, I
D
=-5.5A
23
S
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
C
ISS
1970
205
V
GS
= 0 V,
f = 1.0 MHz
V
DS
= -10 V
C
OSS
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
195
21.0
0.95
1.30
7.60
V
GS
= -4.5 V,
V
DS
= -10 V,
I
D
= -6.5A
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q
GD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
td(ON)
16
15.5
78
V
GS
= -4.5 V,
V
DD
= -10 V,
I
D
=-6.5A,
tr
td(OFF)
tf
ns
Turn-Off Delay Time
Fall Time
R
G
=6
ꢀ
44
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0 V, I
S
=-1.0A
–
-0.76
1.5
V
LPM9021-01
May.-2013
Page 3 of 7
Preliminary Datasheet
LPM9021
Typical Characteristics
(Ta=25
℃
, unless otherwise noted)
LPM9021-01
May.-2013
Page 4 of 7
Preliminary Datasheet
LPM9021
LPM9021-01
May.-2013
Page 5 of 7
Preliminary Datasheet
LPM9021
LPM9021-01
May.-2013
Page 6 of 7
Preliminary Datasheet
LPM9021
Packaging Information
Top View
Side View
Bottom View
Symbol
Dimensions in millimeter
Min
0.70
0.00
Typ
0.75
–
Max
0.80
0.05
A
A1
A3
D
0.203 Ref.
2.00
2.00
0.90
0.80
0.30
0.56
0.30
1.95
1.95
0.85
0.75
0.25
0.51
0.25
2.05
2.05
0.95
0.85
0.35
E
D2
E2
D3
E3
b
0.61
0.35
0.40
L
0.30
0.35
e
0.65 BSC.
LPM9021-01
May.-2013
Page 7 of 7
