LOWPOWER-LPM9031SOF
| Part # | LOWPOWER-LPM9031SOF |
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Preliminary Datasheet
LPM9031
Dual channel N-Channel MOSFE
General Description
Features
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
The LPM9031 is a dual channel MOSFET, which
combines advanced trench MOSFET technology
with a low resistance package to provide extremely
low R
DS(ON)
. This device is suitable for use as a load
switch or in PWM applications.
Advanced high cell density Trench technology
Pin Description
Order Information
Pin Number
LPM9031
□ □
□
Pin Description
SOP-8
DFN_8
5,6,7
F: Pb-Free
1
2
S2
G2
S1
G1
D1
D2
Package Type
SO
：
SOP-8
QV
：
DFN-8
8
3
PAD_2
1
4
5,6
7,8
2,3,4,PAD_1
PAD_2
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Marking Information
Device
Marking
LPS
Package
Shipping
4K/REEL
Charging
LPM9031SOF
SOP-8
LPM9031
YWX
LPS
LPM9031QVF 9031
YWX
DFN-8
5K/REEL
Y:Production year
batch
W:Production period
X:Production
LPM9031-03
Jan.-2018
Page 1 of 8
Preliminary Datasheet
LPM9031
Pin Configurations
1
8
G2
G1
S2
G2
S1
G1
D2
D2
D1
D1
1
2
8
7
6
5
2
7
6
PDA1
PDA2
S2
S2
S2
D1
D1
D1
D1
S1/D2
3
4
3
5
4
DFN-8
SOP-8
TOP VIEW
TOP VIEW
Absolute Maximum Ratings
Channel 1 and channel 2 have the same maximum ratings
Parameter
Symbol
V
DS
Maximum
Unit
V
Drain-Source Voltage
Gate-Source Voltage
30
±
20
5.8
V
GS
T
A
=25
℃
T
A
=70
℃
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
I
D
I
DM
4.9
A
30
T
A
=25
℃
T
A
=70
℃
2
P
D
W
1.3
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
℃
Thermal resistance ratings
Parameter
Symbol
R
θJ
A
TYP
Unit
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Maximum Junction-to-Lead
t ≤ 10s
48
74
32
℃
/W
℃
/W
℃
/W
Steady State
Steady State
R
θJ
L
LPM9031-03
Jan.-2018
Page 2 of 8
Preliminary Datasheet
LPM9031
Electrical Characteristics
Electrical Characteristics (T
=25
℃
unless otherwise noted)
J
Channel 1 and channel 2 have the same electrical characteristics
Symbol
Parameter
Conditions
Min
30
Typ
Max
Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=55
℃
V
1
5
I
DSS
Zero Gate Voltage Drain Current
μ
A
I
GSS
V
GS(th)
I
D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=
±
12V
V
DS
=V
GS,
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=5.8A
T
J
=125℃
100
1.45
nA
V
0.65
30
1.05
A
18
28
19
24
33
0.7
28
39
33
52
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=5.8A
I
S
=1A, V
GS
=0V
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
S
V
A
1
2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
630
75
50
3
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Gate resistance
1.5
4.5
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
6
50
3
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
GS
=4.5V, V
DS
=15V,
I
D
=5.8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
3
Turn-On Rise Time
V
GS
=10V, V
DS
=15V,
2.5
25
4
R
L
=2.6
Ω
, R
GEN=
3
Ω
t
D(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F=
5.8A, dI/dt=100A/
μ
s
I
F=
5.8A, dI/dt=100A/
μ
s
8.5
2.6
Q
rr
LPM9031-03
Jan.-2018
Page 3 of 8
Preliminary Datasheet
LPM9031
Typical Characteristics
LPM9031-03
Jan.-2018
Page 4 of 8
Preliminary Datasheet
LPM9031
LPM9031-03
Jan.-2018
Page 5 of 8
Preliminary Datasheet
LPM9031
LPM9031-03
Jan.-2018
Page 6 of 8
Preliminary Datasheet
LPM9031
Packaging Information
SOP8
LPM9031-03
Jan.-2018
Page 7 of 8
Preliminary Datasheet
LPM9031
DFN8 3*3
LPM9031-03
Jan.-2018
Page 8 of 8
