LRC-L2N7002KLT1G

LESHAN RADIO COMPAN

Y

,

L

TD.  

Small Signal MOSFET  

L2N7002KLT1G  

S-L2N7002KLT1G  

380 mAmps, 60 Volts N–Channel SOT–23  

●

FEATURES  

3

1)ESD Protected  

2)Low RDS(on)  

3)Surface Mount Package  

1

2

4)This is a Pb−Free Device  

5)We declare that the material of product compliant with  

RoHS requirements and Halogen Free.  

SOT–23  

S- Prefix for Automotive and Other Applications Requiring  

Unique Site and Control Change Requirements; AEC-Q101  

Qualified and PPAP Capable.  

6)  

V

R

MAX  

I MAX  

D

(Note 1)  

(BR)DSS  

DS(on)  

●

APPLICATIONS  

1)Low Side Load Switch  

2)Level Shift Circuits  

3)DC−DC Converter  

4)Portable Applications i.e. DSC, PDA, Cell Phone, etc.  

60 V  

2.3

W

@ 10 V  

2.7

W

@ 5.0 V  

380 mA  

●

DEVICE MARKING AND ORDERING INFORMATION  

Simplified Schematic  

Shipping  

Device  

Marking  

RK  

3000/Tape&Reel  

L2N7002KLT1G  

Gate  

1

●

MAXIMUM RATINGS(Tj= 25

℃

unless otherwise stated))  

Rating  

Drain−to−Source Voltage  

Symbol  

V

DSS  

Value  

Unit  

Vdc  

3

Drain  

60  

Gate−to−Source Voltage  

V

GS  

I

D  

±20  

Vdc  

Source  

2

Drain Current  

mAdc  

– Steady State  

– t < 5 s  

T

A

= 25°C  

T

A

= 85°C  

T

A

= 25°C  

T

A

= 85°C  

320  

230  

380  

270  

(

T

o

p View)  

Power Dissipation (Note 1)  

Steady State  

t < 5 s  

P

D  

mW  

300  

420  

1.5  

Pulsed Drain Current (tp = 10 µ  

I

DM  

A

s)  

Operating Junction and Storage

 

T

J

, T

STG  

Temperature Range  

−55 to  

+150  

300  

°C  

Source Current (Body Diode)  

I

S  

mA  

°C  

Lead Temperature for Soldering  

Purposes (1/8 ” from case for 10  

s)  

T

L  

260  

Gate−Source ESD Rating  

(HBM, Method 3015)  

ESD  

2000  

V

Stresses exceeding Maximum Ratings may damage the device. Maximum  

Ratings are stress ratings only. Functional operation above the Recommended  

Operating Conditions is not implied. Extended exposure to stresses above the  

Recommended Operating Conditions may affect device reliability.  

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)  

May,2015  

Rev.E 1/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

L2N7002KLT1G,S-L2N7002KLT1G  

●

THERMAL CHARACTERISTICS  

Unit  

Characteristic  

Max  

Value  

Junction−to−Ambient − Steady  

R

θJA  

417  

℃

/W  

R

θJA  

300  

Junction−to−Ambient − t

≤

5 s  

●

ELECTRICAL CHARACTERISTICS (Ta= 25

℃

)  

Test Condition  

Characteristic  

Min. Typ.

 

Max. Unit  

Symbol  

OFF CHARACTERISTICS  

Drain

−

to

−

Source Breakdown  

Voltage  

V

GS

= 0 V, I

D

= 250

µ

A  

V

(BR)DSS  

60  

V

mV/



C  

Drain

−

to

−

Source Breakdown  

Voltage Temperature Coefficient  

V

(BR)DSS

/T  

71  

J

T

J

= 25



C  

1

V

GS

= 0 V,  

V

DS

= 60 V  

µ

A  

T

J

= 125



C  

500  

I

DSS  

Zero Gate Voltage Drain Current  

V

GS

= 0 V,  

T

J

= 25



C  

V

DS

= 50 V  

100  

nA  

I

GSS  

V

DS

= 0 V, V

GS

=



20 V  

µ

A  



10  

Gate

−

to

−

Source Leakage Current  

ON CHARACTERISTICS (Note 2.)  

V

GS

= V

DS

, I

D

= 250 µA  

V

GS(TH)  

Gate Threshold Voltage  

1

2.5  

V

Negative Threshold Temperature  

Coefficient  

mV/



C  

V

GS(TH)/TJ  

4

V

GS

= 10 V, I

D

= 500 mA  

V

GS

= 5.0 V, I

D

= 50 mA  

V

DS

= 5 V, I

D

= 200 mA  

2.3  

2.7  

R

DS(on)  

G

fs  

Drain−to−Source On Resistance  

Ω

80  

mS  

Forward Transconductance  

CHARGES AND CAPACITANCES  

Input Capacitance  

C

ISS  

C

OSS  

C

RSS  

Q

G(TOT)  

Q

G(TH)  

Q

GS  

34  

3

V

GS

= 0 V, f = 1 MHz, V

DS  

= 25 V  

Output Capacitance  

pF  

nC  

2.2  

Reverse Transfer Capacitance  

Total Gate Charge  

0.71  

0.1  

Threshold Gate Charge  

Gate−to−Source Charge  

Gate−to−Drain Charge  

V

GS

= 4.5 V, V

DS

= 10 V;  

I

D

= 500 mA  

0.32  

0.16  

Q

GD  

SWITCHING CHARACTERISTICS (VGS = V (Note 3)  

Turn

−

On Delay Time  

Rise Time  

t

d(ON)  

tr  

t

d(OFF)  

t

f  

3.8  

3.4  

19  

V

DS

= 10 V, V

GEN

= 10 V,  

I

D

= 500 mA  

ns  

V

Turn

−

Off Delay Time  

Fall Time  

12  

DRAIN−SOURCE DIODE CHARACTERISTICS  

V

GS

= 0 V,  

1.4  

T

J

= 25



C  

T

J

= 85



C  

V

SD  

Forward Diode Voltage  

I

S

= 115  

mA  

0.7  

2. Pulse Test: pulse width

≤

300 s,

 

duty cycle

≤

2%  

3. Switching characteristics are independent of operating junction temperatures  

May,2015  

Rev.E 2/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

L2N7002KLT1G,S-L2N7002KLT1G  

ELECTRICAL CHARACTERISTIC CURVES  

Fig. 1  

Fig. 2  

Fig. 3  

Fig. 4  

May,2015  

Rev.E 3/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

L2N7002KLT1G,S-L2N7002KLT1G  

Fig. 6  

Fig. 5  

Fig. 8  

Fig. 7  

Fig. 9  

May,2015  

Rev.E 4/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

L2N7002KLT1G,S-L2N7002KLT1G  

SOT

–

23  

Dimension Outline:  

NOTES:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M,1982  

A

L

2. CONTROLLING DIMENSION: INCH.  

3

INCHES  

MAX  

MILLIMETERS  

DIM  

S

B

MIN  

MIN  

2.80  

1.20  

0.89  

0.37  

1.78  

0.013  

0.085  

0.35  

0.89  

2.10  

0.45  

MAX  

3.04  

1.40  

1.11  

0.50  

2.04  

0.100  

0.177  

0.69  

1.02  

2.64  

0.60  

1

2

A

B

C

D

G

H

J

0.1102  

0.0472  

0.0350  

0.0150  

0.0701  

0.0005  

0.0034  

0.0140  

0.0350  

0.0830  

0.0177  

0.1197  

0.0551  

0.0440  

0.0200  

0.0807  

0.0040  

0.0070  

0.0285  

0.0401  

0.1039  

0.0236  

V

G

C

K

L

H

J

D

K

S

V

Soldering Footprint:  

0.037  

0.95  

0.037  

0.95  

0.079  

2.0  

0.035  

0.9  

0.031  

0.8  

inches  

mm  

May,2015  

Rev.E 5/5