LRC-L2SA1774RT1G
| Part # | LRC-L2SA1774RT1G |
Download  | LRC-L2SA1774RT1G |
LESHAN RADIO COMPAN
Y
,
L
TD.
L2SA1774QT1G
Series
S-L2SA1774QT1G
General Purpose Transistors
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
z
Series
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
z
z
DEVICE MARKING AND ORDERING INFORMATION
Shipping
Device
Marking
L2SA1774QT1G
3000/Tape&Reel
FQ
S-L2SA1774QT1G
L2SA1774QT3G
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
FQ
FR
FR
S-L2SA1774QT3G
L2SA1774RT1G
S-L2SA1774RT1G
SC-89
L2SA1774RT3G
S-L2SA1774RT3G
L2SA1774ST1G
FS
FS
S-L2SA1774ST1G
COLLECTOR
3
L2SA1774ST3G
S-L2SA1774ST3G
1
!
Absolute maximum ratings
(
T
a
=25
°
C)
BASE
2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−
60
Unit
EMITTER
V
CBO
V
CEO
V
EBO
V
V
−
50
−
6
V
I
C
−
0.15
A (DC)
Collector power
dissipation
P
C
0.15
150
W
Tj
˚C
˚C
Junction temperature
Storage temperature
Tstg
−
55~
+
150
!
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol Min.
Typ. Max.
Unit
V
Conditions
BV
CBO
CEO
EBO
−
60
−
50
−
6
−
−
−
−
−
I
I
I
C
=
=
−
50
µ
A
−
1
µ
A
Collector-base breakdown voltage
V
C
Collector-emitter breakdown voltage
BV
BV
−
−
V
E
=
−
50
µ
A
Emitter-base breakdown voltage
Collector cutoff current
I
CBO
EBO
−
−
0.1
−
0.1
−
0.5
560
−
µ
A
µ
A
V
V
V
CB
=
−
60V
I
−
−
EB
=
−
6V
Emitter cutoff current
V
CE(sat)
FE
−
−
I
C
/I
B
=
−
50mA/
−
5mA
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
h
120
−
−
−
V
V
V
CE
CE
CB
=
=
=
−
6V, I
−
1mA
C
=
f
T
140
4.0
MHz
pF
−
12V, I
−
12V, I
E
=
=
2mA, f
=
30MHz
Cob
−
5.0
E
0A, f
1MHz
=
Output capacitance
h
FE
values are classified as follows:
!
Item
Q
R
S
h
FE
120~270
180~390
270~560
Rev.O 1/3
LESHAN RADIO COMPAN
Y
,
L
TD.
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
!
Electrical characteristic curves
−
35.0
−
100
−
80
−
50
−
10
−
8
CE
=
−
6V
V
Ta=25
˚
C
Ta=25
˚
C
Ta=100
˚
C
25
˚
C
−
40
˚
C
−
31.5
−
28.0
−
24.5
−
21.0
−
17.5
−
14.0
−
10.5
−
7.0
−
20
−
10
−
500
−
450
−
400
−
350
−
300
−
5
−
250
−
200
−
60
−
40
−
20
−
6
−
4
−
2
−
2
−
1
−
150
−
100
−
0.5
−
50
µ
A
−
3.5
µ
A
−
0.2
−
0.1
B
=0
I
I
B
=0
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
−
1.6
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
−
0.2
0
−
1
−
2
−
3
−
4
−
5
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
BASE TO EMITTER VOLTAGE : V
BE
(
V)
COLLECTOR TO
MITTER VOLTAGE : V
CE
(
V)
Fig.2 Grounded
emitter output
characteristics (I)
Fig.3 Grounded
emitter output
characteristics (II)
Fig.1 Grounded
emitter propagation
characteristics
500
−
1
500
Ta=25
˚
C
Ta=100
˚
C
25
˚
C
V
CE
=
−
5V
Ta=25
˚
C
−
3V
−
1V
−
0.5
−
40
˚
C
200
100
50
200
100
−
0.2
−
0.1
I
C
/I
B
=
50
20
10
50
−
0.05
V
CE
=
−
6V
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
mA)
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
mA)
COLLECTOR CURRENT : I
mA)
C
(
COLLECTOR CURRENT
: I
C
(
COLLECTOR CURRENT : I
C
(
Fig.5 DC
current gain vs.
collector current (II)
Fig.4 DC
current gain vs.
collector current (I)
Fig.6 Collector-emitter
saturation
voltage vs. collector current (I)
20
1000
500
−
1
l
C
/l
B
=10
Ta=25
˚
C
CE
=
−
12V
Ta=25
˚
C
f=1MHz
V
I
E
=
I
C
=
0A
0A
−
0.5
10
5
200
100
−
0.2
−
0.1
Ta=100
˚
C
25
˚
C
−
40
˚
C
2
−
0.05
50
−
0.5
−
1
−
2
−
5
−
10
−
20
0.5
1
2
5
10 20
50 100
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
EMITTER CURRENT : I
(
E
mA)
COLLECTOR CURRENT : I
C
(
Fig.9
Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter
saturation
voltage vs. collector current (II)
Fig.8 Gain
bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
Rev.O 2/3
LESHAN RADIO COMPAN
Y
,
L
TD.
L2SA1774QT1G
Series
S-L2SA1774QT1G
Series
SC
–
8
9
A
-X-
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: MILLIMETERS
3. MAXIMUM
LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01
OBSOLETE, NEW STANDARD
463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 3/3
