LRC-L2SA812SLT1G

L2SA812SLT1G  

S-L2SA812SLT1G  

General Purpose Transistors PNP Silicon  

1. FEATURES  

●

High Voltage: VCEO = -50 V.  

Epitaxial planar type.  

●

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

SOT23(TO-236)  

3 Collector  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

2. DEVICE MARKING AND ORDERING INFORMATION  

1 Base  

Device  

Marking  

Shipping  

L2SA812SLT1G  

L2SA812SLT3G  

M7  

3000/Tape&Reel  

10000/Tape&Reel  

M7  

2 Emitter  

3. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VCEO  

VCBO  

VEBO  

IC  

Limits  

Unit  

V

Collector–Emitter Voltage  

Collector–Base Voltage  

-50  

-60  

-6  

V

Emitter–Base Voltage  

V

Collector Current — Continuous  

-150  

mA  

4. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

Limits  

Unit  

Total Device Dissipation,  

PD  

FR−5 Board (Note 1) @ TA = 25ºC  

Derate above 25ºC  

200  

1.8  

mW  

mW/ºC  

ºC/W  

Thermal Resistance,  

556  

RΘJA  

Junction–to–Ambient(Note 1)  

Junction and Storage temperature  

1. FR–5 = 1.0×0.75×0.062 in.  

TJ,Tstg

−55

∼

+150  

ºC  

Leshan Radio Company, LTD.  

Rev.A Dec.

 

2020  

1/6  

L2SA812SLT1G, S-L2SA812SLT1G  

General Purpose Transistors PNP Silicon  

5. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Characteristic  

Collector–Emitter Breakdown Voltage  

(IC = -1.0 mA, IB = 0)  

Symbol  

Min.  

Typ.  

Max.  

Unit  

VBR(CEO)  

VBR(CBO)  

VBR(EBO)  

ICBO  

-50  

–

–

V

Collector–Base Breakdown Voltage  

(IC = -50 μA, IE = 0)  

-60  

–

–

–

–

–

–

V

Emitter–Base Breakdown Voltage  

(IE = -50 μA, IC = 0)  

-6  

–

–

V

Collector-Base cut-off current  

(IE = 0, VCB = -50 V)  

-0.1  

-0.1  

-10  

µA  

µA  

µA  

Emitter-Base cut-off current  

(IC = 0, VEB = -6 V)  

IEBO  

–

Collector-Emitter cutoff Current  

(IB=0, VCE = -50V)  

ICEO  

–

ON CHARACTERISTICS  

DC Current Gain  

HFE  

VCE(sat)  

VBE  

270  

–

–

560  

-0.3  

(IC = – 1mA,VCE = – 6.0V)  

Collector–Emitter Saturation Voltage  

(IC = – 100mA,IB = – 10mA)  

Base -Emitter On Voltage  

(IE = -1.0mA,VCE = – 6.0V)  

SMALL–SIGNAL CHARACTERISTICS  

Current–Gain — Bandwidth Product  

(VCE = – 6.0V,IE = – 10mA)  

Output Capacitance  

-0.18  

-0.62  

V

V

-0.58  

-0.68  

fT  

–

–

180  

4.5  

–

–

MHz  

pF  

Cobo  

(VCE = – 10V, IE =0, f=1.0MHz)  

.

Leshan Radio Company, LTD.  

Rev.A Dec.

 

2020  

2/6  

L2SA812SLT1G, S-L2SA812SLT1G  

General Purpose Transistors PNP Silicon  

6.ELECTRICAL CHARACTERISTICS CURVES  

900  

600  

Ta=

25

℃

 

VCE=6.0V  

150

℃

 

800  

700  

600  

500  

400  

300  

200  

100  

0

VCE=5V  

500  

VCE=1V  

400  

300  

200  

100  

0

25

℃  

VCE=3V  

-55

℃  

0.0001  

0.001  

0.01  

0.1  

1

0.0001  

0.001  

0.01  

0.1  

1

IC Collector

 

Current(A)  

IC Collector Current(A)  

HFE vs. IC  

HFE vs. IC  

0.12  

0.10  

0.08  

0.06  

0.04  

0.02  

0.00  

1.0  

IC=100mA  

IC=70mA  

IB=500µA  

IC=1mA  

IC=10mA  

IC=30mA  

IC=50mA  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

IB=400µA  

IB=300µA  

IB=200µA  

IB=150µA  

IB=100µA  

IB=50µA  

0

1

2

3

4

5

0.002  

0.02  

0.2  

2

20  

IB Base Current(mA)  

VCE Collector to Emittor Voltage(V)  

VCE vs. IB  

IC vs. VCE  

Leshan Radio Company, LTD.  

Rev.A Dec.

 

2020  

3/6  

L2SA812SLT1G, S-L2SA812SLT1G  

General Purpose Transistors PNP Silicon  

6.ELECTRICAL CHARACTERISTICS CURVES(Con.)  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

-55

℃  

25

℃  

-55

℃  

25

℃  

150

℃  

150

℃  

VCE=10V  

VCE=6.0V  

0.0001  

0.001  

0.01  

0.1  

1

0.0001  

0.001  

0.01  

0.1  

1

IC Collector Current(A)  

IC Collector Current(A)  

VBE(on) vs. IC  

VBE(on) vs. IC  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

IC/IB=10  

-55

℃  

25

℃  

25

℃  

150

℃  

150

℃  

-55

℃  

IC/IB=10  

0.0001  

0.001  

0.01  

0.1  

1

0.0001  

0.001  

0.01  

0.1  

1

IC,Collector Current(A)  

IC Collector Current(A)  

VCE(sat) vs. IC  

VBE(sat) vs. IC  

Leshan Radio Company, LTD.  

Rev.A Dec.

 

2020  

4/6  

L2SA812SLT1G, S-L2SA812SLT1G  

General Purpose Transistors PNP Silicon  

6.ELECTRICAL CHARACTERISTICS CURVES(Con.)  

14  

12  

10  

8

f=1.0MHz  

Ta=25

℃  

Cibo  

6

Cobo  

4

2

0

0.1  

1

10  

100  

VR Reverse Voltage(V)  

Capacitance  

Leshan Radio Company, LTD.  

Rev.A Dec.

 

2020  

5/6  

L2SA812SLT1G, S-L2SA812SLT1G  

General Purpose Transistors PNP Silicon  

7.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM

 

MAX MIN NOM

 

MAX  

DIM  

A

0.89  

1

1.11 0.035 0.04 0.044  

0.1 0.001

 

0.002 0.004  

0.5 0.015

 

0.018 0.02  

A1 0.01  

0.06  

0.44  

b

c

0.37  

0.09  

2.80  

1.20  

1.78  

0.10  

0.13 0.18

 

0.003 0.005 0.007  

D

E

e

L

2.9  

1.3  

1.9  

0.2  

3.04 0.11

 

0.114 0.12  

1.4 0.047

 

0.051 0.055  

2.04 0.07

 

0.075 0.081  

0.3 0.004

 

0.008 0.012  

L1 0.35  

0.54 0.69

 

0.014 0.021 0.029  

H

E  

2.10  

0°  

2.4  

—  

2.64 0.083

 

0.094 0.104  

10° 0°

 

— 10°  

θ

8.SOLDERING FOOTPRINT  

Leshan Radio Company, LTD.  

Rev.A Dec.

 

2020  

6/6  

DISCLAIMER  

●

Before you use our Products, you are requested to carefully read this document and fully understand its  

contents. LRC

 

shall not

 

be in any way responsible or

 

liable for failure,

 

malfunction or accident arising  

from the use of any LRC’s Products against warning, caution or note contained in this document.  

All information contained in this document is current as of the issuing date and subject to change without  

any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a  

LRC sales representative.  

●