LRC-L2SC3356LT1G
| Part # | LRC-L2SC3356LT1G |
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LESHAN RADIO COMPAN
Y
,
L
TD.
L2SC3356LT1G
DESCRIPTION
The
L
2SC3356
LT1
is an NPN silicon epitaxial transistor designed for
S-L2SC3356LT1G
low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
ORDERING INFORMATION
1
2
Shipping
Device
Marking
R24
SOT-23
L2SC3356LT1G
3000/Tape & Reel
10000/Tape & Reel
S-L2SC3356LT1G
L2SC3356LT3G
R24
S-L2SC3356LT3G
FEATURES
• We
declare that the material of product compliance with RoHS requirements.
•
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gain
•
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
I
C
20
12
V
V
3.0
V
100
mA
mW
C
Total Power Dissipation
Junction Temperature
Storage Temperature
P
T
200
T
j
150
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
SYMBOL
MIN.
TYP.
MAX.
UNIT
A
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
I
CBO
1.0
1.0
270
I
EBO
A
V
EB
= 1.0 V, I
C
= 0
h
F
E
82
170
7
V
CE
= 3 V,
I
C
= 10 mA
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
f
T
GHz
pF
V
CE
= 10 V, I
C
= 20 mA
C
re
**
0.55
11.5
1.1
1.0
2.0
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
2
S
21
e
dB
NF
dB
*
Pulse Measurement PW
350 s,
Duty Cycle
2 %
* The
emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Driver Marking
L2SC3356LT1G=R24
Rev.O 1/4
LESHAN RADIO COMPAN
Y
,
L
TD.
;S-L2SC3356LT1G
L2SC3356LT1G
TYPICAL CHARACTERISTICS
(T
A
= 25
C)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2
1
f = 1.0 MHz
Free Air
200
100
0.5
0.3
0
50
100
150
0
0.5
1
2
5
10
20 30
T
A
-Ambient Temperature-
°
C
V
CB
-Collector to Base Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
200
100
50
15
10
V
CE
= 10 V
5
0
20
10
V
CE
= 10 V
f = 1.0 GHz
0.5
1
5
10
50
0.5
1
5
10
50 70
I
C
-Collector Current-mA
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
10
G
max
5.0
20
2
3.0
2.0
|S
21e
|
1.0
10
0
0.5
0.3
0.2
V
CE
= 10 V
= 20 mA
V
CE
= 10 V
I
C
0.1
0
0.5 1.0
5.0 10
30
0.1
0.2
0.4 0.6
0.81.0
2
I
C
-Collector Current-mA
f-Frequency-GHz
Rev.O 2/4
LESHAN RADIO COMPAN
Y
,
L
TD.
;S-L2SC3356LT1G
L2SC3356LT1G
NOISE FIGURE vs.
NOISE FIGURE, FORWARD INSERTION
COLLECTOR CURRENT
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
7
6
5
4
3
2
18
15
12
6
5
V
CE
= 10 V
f = 1.0 GHz
= 20 mA
f = 1.0 GHz
I
C
4
3
2
1
2
|S
21e
|
NF
3
1
0
0
0.5
1
5
10
50 70
0
2
4
6
8
10
I
C
-Collector Current-mA
V
CE
-Collector to Emitter Voltage-V
Rev.O 3/4
LESHAN RADIO COMPAN
Y
,
L
TD.
;S-L2SC3356LT1G
L2SC3356LT1G
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
L
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.03
1
0.
8
inches
mm
Rev.O 4/4
