LRC-L2SC4081ST1G
| Part # | LRC-L2SC4081ST1G |
Download  | LRC-L2SC4081ST1G |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC4081QT1G Series
S-L2SC4081QT1G Series
FEATURE
ƽ
Low Cob,Cob=2pF(Typ.).
ƽ
Epitaxial planar type.
ƽ
PNP complement:L2SA1576A
3
ƽ
ƽ
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
SC-70/SOT– 323
L2SC4081QT1G
BQ
3000/Tape&Reel
S-L2SC4081QT1G
L2SC4081QT3G
BQ
BR
10000/Tape&Reel
3000/Tape&Reel
S-L2SC4081QT3G
3
COLLECTOR
L2SC4081RT1G
S-L2SC4081RT1G
L2SC4081RT3G
1
BR
BS
10000/Tape&Reel
3000/Tape&Reel
S-L2SC4081RT3G
BASE
L2SC4081ST1G
S-L2SC4081ST1G
2
L2SC4081ST3G
S-L2SC4081ST3G
EMITTER
BS
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
60
V
7.0
V
150
0.15
150
mAdc
W
P
C
T
j
°C
T
stg
–
55
~
+150
°C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(I
C
= 1 mA)
V
(BR)CEO
50
—
—
V
Emitter–Base Breakdown Voltage
(I
E
= 50
µ
A)
Collector–Base Breakdown Voltage
(I
C
= 50
µ
A)
Collector Cutoff Current
(V
CB
= 60
V)
V
(BR)EBO
V
(BR)CBO
I
CBO
7
—
—
—
—
—
V
V
60
—
—
—
0.1
0.1
µ
A
µ
A
Emitter cutoff current
I
EBO
(V
EB
= 7
V)
Collector-emitter saturation voltage
(I
C
/ I
B
= 50
mA /
5m A)
DC current transfer ratio
(V
CE
= 6
V, I
C
= 1mA)
Transition frequency
V
CE(sat)
h
FE
—
—
0.4
V
120
––
560
––
f
T
—
—
180
2.0
––
MHz
pF
(V
CE
= 12
V, I
E
= – 2mA, f =30MHz )
Output capacitance
C
ob
3.5
(V
CB
= 12
V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
Q
R
S
*
h
FE
120~270
180~390
270~560
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
Fig.1 Grounded
emitter propagation characteristics
Fig.2 Grounded
emitter output characteristics(
)
0.50mA
50
100
V
CE
= 6 V
T
A
= 25°C
20
10
50
80
60
40
20
0
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
BE
, BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded
emitter output characteristics(
)
Fig.4 DC
current gain vs. collector current (
)
10
500
8
6
4
2
0
200
100
50
20
10
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
50
100
200
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter
saturation voltage vs.
collector current
Fig.5 DC
current gain vs. collector current (
)
0.5
500
0.2
200
100
50
0.1
0.05
0.02
0.01
20
10
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
)
Fig.8 Collector-emitter
saturation voltage vs.
collector current (
)
0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig.9 Gain
bandwidth product vs. emitter current
Fig.10 Collector
output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
5
200
100
50
2
1
–0.5
–1
–2
–5
–10
–20
–50
–100
0.2
0.5
1
2
5
10
20
50
I
E
, EMITTER CURRENT (mA)
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
EB
, EMITTER TO BASE VOLTAGE (V)
V
Fig.11 Base-collector
time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I
E
, EMITTER CURRENT (mA)
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series
S-L2SC4081QT1G Series
SC
–
70 / SOT
–
323
D
NOTES:
e1
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
H
E
c
2.00
2.40
0.079
0.095
A2
A
0.05 (0.002)
L
GENERIC
A1
MARKING DIAGRAM
SOLDERING FOOTPRINT*
M
XX
0.65
0.025
0.65
0.025
1
XX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
1.9
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G
”,
may or may not be present.
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev.O 5/5
