LRC-L8550HQLT1G

LESHAN RADIO COMPANY, LTD.  

General Purpose Transistors  

L8550HPLT1G  

Series  

S-L8550HPLT1G  

Series  

PNP Silicon  

FEATURE  

ƽ

High current capacity in compact package.  

ƽ

Epitaxial planar type.  

ƽ

PN

P

complement: L

8550

H  

3

ƽ

ƽ

We declare that the material of product compliance with RoHS requirements.  

S- Prefix for Automotive and Other Applications Requiring Unique Site  

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  

1

2

SOT–23  

DEVICE MARKING AND ORDERING INFORMATION  

COLLECTOR  

3

Shipping  

Device  

Marking  

3000/Tape&Reel  

L8550HPLT1G  

s-L8550HPLT1G  

s-L8550HPLT3G  

s-L8550HQLT1G  

1HB  

1

10000/Tape&Reel  

3000/Tape&Reel  

L8550HPLT3G  

L8550HQLT1G  

1HB  

1HD  

BASE  

2

EMITTER  

10000/Tape&Reel  

3000/Tape&Reel  

L8550HQLT3G  

L8550HRLT1G  

s-L8550HQLT3G  

s-L8550HRLT1G  

1HD  

1HF  

10000/Tape&Reel  

3000/Tape&Reel  

L8550HRLT3G  

L8550HSLT1G  

L8550HSLT3G  

s-L8550HRLT3G  

s-L8550HSLT1G  

s-L8550HSLT3G  

1HF  

1HH  

1HH  

10000/Tape&Reel  

MAXIMUM RATINGS  

Rating  

Symbol  

Max  

Unit  

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

V

CEO  

V

CBO  

V

EBO  

-25  

-40  

-5  

V

V

V

I

C

-1500  

mAdc  

THERMAL CHARACTERISTICS  

Characteristic  

Symbol  

Max  

Unit  

T

o

tal Device Dissipation FR-5 Board,(1)  

P

D

T

A

=25°C  

225  

1.8  

mW  

Derate above 25°C  

mW/°C  

Thermal Resistance,Junction to Ambient  

R

θ

J A  

556  

°C/W  

T

o

tal Device Dissipation  

Alumina Substrate,(2) TA=25°C  

Derate above 25°C  

P

D

300  

2.4  

mW  

mW/°C  

Thermal Resistance,Junction to Ambient  

Junction and Storage

T

e

mperature  

R

θ

J A  

417  

°C/W  

°C  

T

j,  

T

S

t

g

-55 to +150  

1. FR–5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

Rev.A 1/3  

LESHAN RADIO COMPANY, LTD.  

L8550HPLT1G  

Series  

S-L8550HPLT1G  

Series  

ELECTRICAL CHARACTERISTICS

 

(T

A

=25°C unless otherwise noted)  

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Collector-Emitter Breakdown Voltage  

(I

C

=-1.0mA)  

–

–

–

–

–

–

V

(BR)CEO  

V

(BR)EBO  

V

(BR)CBO  

-25  

-5  

V

V

V

Emitter-Base Breakdown Voltage  

(I

E

=-10

0

µΑ

)  

Collector-Base Breakdown Voltage  

(I

C

=-10

0

µΑ

)  

-40  

Collector Cutoff Current (V

CB

=-35V)  

Emitter Cutoff Current (V

EB

=-4V)  

ELECTRICAL CHARACTERISTICS (T  

Characteristic  

I

CBO  

I

EBO  

–

–

–

–

-150  

-150  

nA  

nA  

A

=25°C unless otherwise noted)  

Symbol  

Min  

Typ  

Max  

Unit  

ON CHARACTERISTICS  

DC Current Gain  

I

C

=-100mA,V

CE

=-1V  

H

FE  

1

0

0  

–

–

600  

-0.5  

Collector-Emitter Saturation Voltage  

(I

C

=-800mA,I

B

=-80mA)  

V

CE(S)  

–

V

NOTE :  

*

P

Q

R

S

h

F

E  

1

0

0~200  

150~300  

200~400  

300~600  

Rev.A 2/3  

LESHAN RADIO COMPANY, LTD.  

L8550HPLT1G  

Series  

S-L8550HPLT1G  

Series  

SOT

–

23  

NOTES:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M,1982  

A

L

2. CONTROLLING DIMENSION: INCH.  

3

INCHES  

MAX  

MILLIMETERS  

DIM  

S

B

MIN  

MIN  

2.80  

1.20  

0.89  

0.37  

1.78  

0.013  

0.085  

0.35  

0.89  

2.10  

0.45  

MAX  

3.04  

1.40  

1.11  

0.50  

2.04  

0.100  

0.177  

0.69  

1.02  

2.64  

0.60  

1

2

A

B

C

D

G

H

J

0.1102  

0.0472  

0.0350  

0.0150  

0.0701  

0.0005  

0.0034  

0.0140  

0.0350  

0.0830  

0.0177  

0.1197  

0.0551  

0.0440  

0.0200  

0.0807  

0.0040  

0.0070  

0.0285  

0.0401  

0.1039  

0.0236  

V

G

C

K

L

H

J

D

K

S

V

PIN 1. BASE  

2. EMITTER  

3. COLLECTOR  

0.037  

0.95  

0.037  

0.95  

0.079  

2.0  

0.035  

0.9  

0.031  

0.8  

inches  

mm  

Rev.A 3/3