LRC-L8550QLT1G

LESHAN RADIO COMPANY, LTD.  

General Purpose Transistors  

PNP Silicon  

L8550PLT1G  

Series  

S-L8550PLT1G  

Series  

FEATURE  

We declare that the material of product compliance with RoHS requirements.  

S- Prefix for Automotive and Other Applications Requiring Unique Site  

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  

3

1

2

DEVICE MARKING AND ORDERING INFORMATION  

SOT– 23  

Shipping  

Device  

Marking  

85P  

3000/Tape&Reel  

s-L8550PLT1G  

s-L8550PLT3G  

s-L8550QLT1G  

L8550PLT1G  

85P  

10000/Tape&Reel  

3000/Tape&Reel  

COLLECTOR  

3

L8550PLT3G  

L8550QLT1G  

1YD  

1YD  

1

10000/Tape&Reel  

3000/Tape&Reel  

s-L8550QLT3G  

s-L8550RLT1G  

L8550QLT3G  

L8550RLT1G  

BASE  

1YF  

1YF  

1YH  

1YH  

2

EMITTER  

10000/Tape&Reel  

3000/Tape&Reel  

s-L8550RLT3G  

s-L8550SLT1G  

s-L8550SLT3G  

L8550RLT3G  

L8550SLT1G  

L8550SLT3G  

10000/Tape&Reel  

MAXIMUM RATINGS  

Rating  

Symbol  

Value  

-25  

Unit  

Collector-Emitter Voltage  

Collector-Base voltage  

Emitter-base Voltage  

Collector current-continuoun  

V

CEO  

V

CBO  

V

EBO  

I

C  

V

V

-40  

-5  

V

-800  

mAdc  

THERMALCHARACTERISTICS  

Characteristic  

Symbol  

Max  

Unit  

T

o

tal Device Dissipation FR- 5 Board

(1)  

T

A

= 2

5

°C  

Derate above 2

5

°C  

Thermal Resistance, Junction to Ambient  

T

o

tal Device Dissipation  

P

D  

225  

1.8  

mW  

mW /°C  

°C/W  

R

θ

JA  

P

D  

556  

Alumina Substrate,

(2)

T

A

= 2

5

°C  

Derate above 2

5

°C  

Thermal Resistance, Junction to Ambient  

Junction and Storage

T

e

mperature  

300  

2.4  

mW  

mW /°C  

°C/W  

°C  

R

θ

JA  

417  

T

J

, T

stg

-55 to +150  

1. FR–5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

Rev.O 1/4  

LESHAN RADIO COMPANY, LTD.  

L8550PLT1G  

Series  

S-L8550PLT1G  

Series  

ELECTRICAL CHARACTERISTICS

(T

A

= 2

5

°C unless otherwise noted)  

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFFCHARACTERISTICS  

Collector-Emitter Breakdown Voltage  

(I

C

=-1.0mA)  

V

(BR)CEO  

V

(BR)EBO  

V

(BR)CBO  

-25  

-5  

-40  

–

–

–

–

–

V

V

Emitter-Base Breakdown

 

Voltage  

(I

E

= -100

µ

A)  

Collector-Base Breakdown voltage  

(I

C

= -100

µ

A)  

Collector Cutoff Current  

(V

CB

= -35 V)  

–

–

V

I

–

-150  

-150  

nA  

nA  

CBO  

Emitter Cutoff Current  

I

EBO  

–

–

(V

EB

= -4V)  

1. FR-5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

ON CHARACTERISTICS  

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

DC Current Gain  

H

FE  

1

0

0  

–

600  

(I

C

=-100mA, V

CE

=-1V)  

Collector-Emitter Saturation Voltage  

V

CE(S)  

–

–

-0.5  

V

(I

C

=-800mA, I =-80mA)  

B

NOTE:  

*

P

Q

R

S

h

FE  

100~200  

150~300  

200~400  

300~600  

Rev.O 2/4  

LESHAN RADIO COMPANY, LTD.  

L8550PLT1G  

Series  

S-L8550PLT1G  

Series  

Rev.O 3/4  

LESHAN RADIO COMPANY, LTD.  

L8550PLT1G  

Series  

S-L8550PLT1G  

Series  

SOT

–

23  

NOTES:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M,1982  

A

L

2. CONTROLLING DIMENSION: INCH.  

3

INCHES  

MAX  

MILLIMETERS  

DIM  

S

B

MIN  

MIN  

2.80  

1.20  

0.89  

0.37  

1.78  

0.013  

0.085  

0.35  

0.89  

2.10  

0.45  

MAX  

3.04  

1.40  

1.11  

0.50  

2.04  

0.100  

0.177  

0.69  

1.02  

2.64  

0.60  

1

2

A

B

C

D

G

H

J

0.1102  

0.0472  

0.0350  

0.0150  

0.0701  

0.0005  

0.0034  

0.0140  

0.0350  

0.0830  

0.0177  

0.1197  

0.0551  

0.0440  

0.0200  

0.0807  

0.0040  

0.0070  

0.0285  

0.0401  

0.1039  

0.0236  

V

G

C

K

L

H

J

D

K

S

V

PIN 1. BASE  

2. EMITTER  

3. COLLECTOR  

0.037  

0.95  

0.037  

0.95  

0.079  

2.0  

0.035  

0.9  

0.031  

0.8  

inches  

mm  

Rev.O 4/4