LRC-L9012QLT1G

LESHAN RADIO COMPANY, LTD.  

General Purpose Transistors  

PNP Silicon  

FEATURE  

L9012PLT1G  

Series  

We declare that the material of product compliance with RoHS requirements.  

S-L9012PLT1G  

Series  

S- Prefix for Automotive and Other Applications Requiring Unique Site  

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  

DEVICE MARKING AND ORDERING INFORMATION  

3

Device  

Marking  

Shipping  

L9012PLT1G  

S-L9012PLT1G  

12P  

3000/Tape&Reel  

1

L9012PLT3G  

12P  

12Q  

10000/Tape&Reel  

3000/Tape&Reel  

S- L9012PLT3G  

2

L9012QLT1G  

S- L9012QLT1G  

SOT-23 (TO-236AB)  

L9012QLT3G  

12Q  

12R  

10000/Tape&Reel  

3000/Tape&Reel  

S- L9012QLT3G  

L9012RLT1G  

S-L9012RLT1G  

3

COLLECTOR  

L9012RLT3G  

12R  

12S  

10000/Tape&Reel  

3000/Tape&Reel  

S-L9012RLT3G  

L9012SLT1G  

S-L9012SLT1G  

1

BASE  

L9012SLT3G  

12S  

10000/Tape&Reel  

S-L9012SLT3G  

2

MAXIMUM RATINGS  

Rating  

EMITTER  

Symbol  

Value  

Unit  

Collector-Emitter Voltage  

V

CEO  

V

CBO  

V

EBO  

IC  

-20  

V

V

Collector-Base Voltage  

Emitter-Base Voltage  

-40  

-5  

V

Collector current-continuoun  

-500  

mAdc  

THERMAL CHARATEERISTICS  

Characteristic  

Symbol  

Max  

Unit  

Total Device Dissipation FR-5 Board, (1)  

P

D  

T

A

=25

o

C  

225  

mW  

Derate above 25

o

C  

1.8  

mW/

o

C  

Thermal Resistance, Junction to Ambient  

R

θ

JA  

P

D  

556  

Total Device Dissipation  

Alumina Substrate, (2) T

A

=25

o

C  

Derate above 25

o

C  

300  

2.4  

mW  

mW/

o

C  

Thermal Resistance, Junction to Ambient  

Junction and Storage Temperature  

R

θ

JA  

417  

Tj ,Tstg  

-55 to +150  

1. FR–5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

ELECTRICAL CHARACTERISTICS

 

(T

=25

o

C unless otherwise noted)  

A

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

OFF CHARACTERISTICS  

Collector-Emitter Breakdown Voltage  

(I

C

=-1.0mA)  

V

(BR)CEO  

V

(BR)EBO  

V

(BR)CBO  

-20  

–

–

V

Emitter-Base Breakdown Voltage  

-5  

–

–

–

–

V

V

µ

(I

E

=-100  

A)  

Collector-Base Breakdown Voltage  

-40  

µ

(I

C

=-100 A)  

–

–

-150  

-150  

nA  

nA  

Collector Cutoff Current

 

(V

CB

=-35V)  

I

CBO  

I

EBO  

Emitter Cutoff Current

 

(V

BE

=-4V)  

Rev.O 1/2  

LESHAN RADIO COMPANY, LTD.  

L9012PLT1G Series  

S-L9012PLT1G Series  

ON CHARACTERISTICS  

DC Current Gain  

(I

C

=-50mA, V

C

E

=-1V)  

H

fe  

100  

–

–

–

600  

-0.6  

Collector-Emitter Saturation Voltage  

(I

C

=-500mA,

I

B

=-50mA)  

V

V

CE(S)  

NOTE:  

*

P

Q

R

S

H

FE  

100~200  

150~300 200~400 300~600  

SOT-23 (TO-236AB)  

A

L

NOTES:  

1. CONTROLLING DIMENSION: MILLIMETERS  

3

2. LEAD THICKNESS SPECIFIED PER

 

L / F DRAWING WITH  

SOLDER PLATING.  

S

B

1

2

INCHES  

MIN MAX  

MILLIMETERS  

DIM  

A

B

C

D

G

H

J

MIN  

2.80  

1.20  

0.89  

0.37  

1.78  

0.013  

0.085  

0.45  

0.89  

2.10  

0.45  

MAX  

3.04  

1.40  

1.11  

0.50  

2.04  

0.100  

0.177  

0.60  

1.02  

2.50  

0.60  

V

G

0.1102 0.1197  

0.0472 0.0551  

0.0350 0.0440  

0.0150 0.0200  

0.0701 0.0807  

0.0005 0.0040  

0.0034 0.0070  

0.0180 0.0236  

0.0350 0.0401  

0.0830 0.0984  

0.0177 0.0236  

K

L

S

C

V

H

J

D

K

PIN 1.

 

BASE  

2.

EMITTER  

3.

COLLECTOR  

0.037  

0.95  

0.037  

0.95  

0.079  

2.0  

0.035  

0.9  

0.031  

0.8  

inches  

mm  

Rev.O 2/2