LRC-L9013QLT1G
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L9013QLT1G
S-L9013QLT1G
General Purpose Transistors NPN Silicon
1. FEATURES
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
SOT23
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L9013QLT1G
13Q
3000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VCEO
VCBO
VEBO
IC
Limits
Unit
V
Collector-Emitter Voltage
Collector-Base voltage
20
40
5
V
Emitter-Base Voltage
V
Collector current-continuoun
500
mA
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
PD
225
1.8
mW
mW/
℃
℃
/W
Thermal Resistance, Junction–to–Ambient
Total Device Dissipation,
RΘJA
556
PD
Alumina Substrate, (Note 2)@ TA = 25ºC
Derate above 25ºC
300
2.4
mW
mW/
℃
℃
/W
℃
Thermal Resistance, Junction–to–Ambient
Junction and
Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
RΘJA
417
TJ,Tstg
−55
∼
+150
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Leshan Radio Company, LTD.
Rev.O Mar. 2017
1/5
L9013QLT1G,S-L9013QLT1G
General Purpose Transistors NPN Silicon
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
20
5
Typ.
Max.
Unit
Vdc
Collector-Emitter Breakdown Voltage
(IC =1.0mA)
V(BR)CEO
–
–
–
–
–
–
–
Vdc
Vdc
nA
Emitter-Base Breakdown Voltage
(IE = 100µA)
V(BR)EBO
V(BR)CBO
ICBO
Collector-Base Breakdown voltage
(IC = 100µA)
40
–
–
Collector Cutoff Current
(VCB = 35 V)
150
150
nA
Emitter Cutoff Current
(VEB = 4V)
IEBO
–
ON CHARACTERISTICS
DC Current Gain
HFE
(IC =50mA, VCE =1V)
Collector-Emitter Saturation Voltage
(IC =500mA,IB =50mA)
150
–
–
–
300
0.6
Vdc
VCE(S)
Leshan Radio Company, LTD.
Rev.O Mar. 2017
2/5
L9013QLT1G,S-L9013QLT1G
General Purpose Transistors NPN Silicon
6
.
ELECTRICAL CHARACTERISTICS CURVES
IB=5mA
400
350
300
250
200
150
100
50
0.5
0.4
0.3
0.2
0.1
0.0
IB=4mA
IB=3mA
VCE=1V
150
℃
25
℃
IB=2mA
IB=1mA
-55
℃
Ta=25
℃
0
0.0001
0.001
0.01
0.1
1
0
2
4
6
8
10
VCE,Colleect to emittor Voltage(V)
IC,Collect Current(A)
IC vs. VCE
HFE vs. IC
1.2
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VCE=1V
-55
℃
-55
℃
0.8
0.6
0.4
0.2
0
25
℃
25
℃
150
℃
150
℃
IC/IB=10
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
IC,Collector Current(A)
IC,Collector Current(A)
VBE vs. IC
VBESAT vs. IC
Leshan Radio Company, LTD.
Rev.O Mar. 2017
3/5
L9013QLT1G,S-L9013QLT1G
General Purpose Transistors NPN Silicon
6
.
ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.2
0.18
0.16
0.14
0.12
0.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
500mA
400mA
IC/IB=10
150
℃
300mA
200mA
10mA
25
℃
50mA
90mA
100mA
0.08
0.06
0.04
0.02
0
-55
℃
5.0E-06
5.0E-05
5.0E-04
5.0E-03
5.0E-02
0.0001
0.001
0.01
0.1
1
IC(A)
IB,Bae Current(A)
VCESAT vs. IC
VCESAT vs. IB
3000
2500
2000
1500
1000
500
VCE=20V
0
-25
0
25
50
75
100 125 150
TJ,Temperature
(
℃
)
ICEO vs. TJ
Leshan Radio Company, LTD.
Rev.O Mar. 2017
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L9013QLT1G,S-L9013QLT1G
General Purpose Transistors NPN Silicon
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM MAX
MIN NOM MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001
0.002 0.004
0.5 0.015
0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18
0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11
0.114 0.12
1.4 0.047
0.051 0.055
2.04 0.07
0.075 0.081
0.3 0.004
0.008 0.012
L1 0.35
0.54 0.69
0.014 0.021 0.029
H
E
2.10
0°
2.4
—
2.64 0.083
0.094 0.104
10° 0°
— 10°
θ
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.O Mar. 2017
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