LRC-L9013RLT1G

Part #LRC-L9013RLT1G
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LRC-L9013RLT1G
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
FEATURE  
L9013PLT1G  
Series  
We declare that the material of product compliance with RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
S-L9013PLT1G  
Series  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
L9013PLT1G  
S-L9013PLT1G  
13P  
3000/Tape&Reel  
3
L9013PLT3G  
13P  
13Q  
10000/Tape&Reel  
3000/Tape&Reel  
S-L9013PLT3G  
1
L9013QLT1G  
S-L9013QLT1G  
2
L9013QLT3G  
13Q  
13R  
10000/Tape&Reel  
3000/Tape&Reel  
S-L9013QLT3G  
SOT-23 (TO-236AB)  
L9013RLT1G  
S-L9013RLT1G  
L9013RLT3G  
13R  
13S  
10000/Tape&Reel  
3000/Tape&Reel  
S-L9013RLT3G  
L9013SLT1G  
S-L9013SLT1G  
3
COLLECTOR  
L9013SLT3G  
13S  
10000/Tape&Reel  
S-L9013SLT3G  
1
MAXIMUM RATINGS  
Rating  
BASE  
Symbol  
Value  
Unit  
2
Collector-Emitter Voltage  
V

CEO  

V

CBO  

V

EBO  

I
C  
20  
V
EMITTER  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
5
V
V
Collector current-continuoun  
THERMAL CHARATEERISTICS  
500  
mAdc  
Max  
225  
Characteristic  
Symbol  
Unit  
Total Device Dissipation FR-5 Board, (1)  
P

D  

T

A

=25

o

C  
mW  
Derate above 25

o

C  
1.8  
556  
mW/

o

C  
Thermal Resistance, Junction to Ambient  
R

o

C
/
W  
q
JA  
Total Device Dissipation  
P

D  

Alumina Substrate, (2) T
A
=25

o

C  
300  
2.4  
417  
mW  
mW/

o

C  

o

C
/
W  

o

C  
Derate above 25

o

C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
q
JA  
Tj ,Tstg  
-55 to +150  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
ELECTRICAL CHARACTERISTICS
 
(T
A
=25

o

C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(I
C
=1.0mA)  
V
(BR)CEO  
V
(BR)EBO  
V
(BR)CBO  
20  
–
–
–
–
–
–
–
V
V
V
Emitter-Base Breakdown Voltage  
(I
E
=100
m
A)  
Collector-Base Breakdown Voltage  
(I
C
=100
m
A)  
Collector Cutoff Current
 
(V
CB
=35V)  
Emitter Cutoff Current
 
(V
EB
=4V)  
5
40  
I
CBO  
I
EBO  
–
150  
150  
nA  
nA  
Rev.O 1/2  

LESHAN RADIO COMPANY, LTD.  
L9013PLT1G Series  
S-L9013PLT1G Series  
ON CHARACTERISTICS  
DC Current Gain  
(I
C
=50mA, V
CE
=1V)  
Collector-Emitter Saturation Voltage  
(I
C
=500mA,I
B
=50mA)  
H
fe  
100  
–
–
600  
0.6  
V
CE(S)  
–
V
NOTE:  
*
P
Q
R
S
H
FE  
100~200  
150~300  
200~400  
300~600  
SOT-23 (TO-236AB)  
NOTES:  
1. CONTROLLING DIMENSION: MILLIMETERS  
A
L
2. LEAD THICKNESS SPECIFIED PER
 
L / F DRAWING WITH  
SOLDER PLATING.  
3
INCHES  
MIN MAX  
MILLIMETERS  
S
B
DIM  
A
B
C
D
G
H
J
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.45  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.60  
1.02  
2.50  
0.60  
1
2
0.1102 0.1197  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.0005 0.0040  
0.0034 0.0070  
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
V
G
K
L
S
V
C
PIN 1.
 
BASE  
2.
EMITTER  
3.
COLLECTOR  
H
J
D
K
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
Rev.O 2/2