LRC-L9013RLT1G
| Part # | LRC-L9013RLT1G |
| Download | LRC-L9013RLT1G |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
L9013PLT1G
Series
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-L9013PLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L9013PLT1G
S-L9013PLT1G
13P
3000/Tape&Reel
3
L9013PLT3G
13P
13Q
10000/Tape&Reel
3000/Tape&Reel
S-L9013PLT3G
1
L9013QLT1G
S-L9013QLT1G
2
L9013QLT3G
13Q
13R
10000/Tape&Reel
3000/Tape&Reel
S-L9013QLT3G
SOT-23 (TO-236AB)
L9013RLT1G
S-L9013RLT1G
L9013RLT3G
13R
13S
10000/Tape&Reel
3000/Tape&Reel
S-L9013RLT3G
L9013SLT1G
S-L9013SLT1G
3
COLLECTOR
L9013SLT3G
13S
10000/Tape&Reel
S-L9013SLT3G
1
MAXIMUM RATINGS
Rating
BASE
Symbol
Value
Unit
2
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
I
C
20
V
EMITTER
Collector-Base Voltage
Emitter-Base Voltage
40
5
V
V
Collector current-continuoun
THERMAL CHARATEERISTICS
500
mAdc
Max
225
Characteristic
Symbol
Unit
Total Device Dissipation FR-5 Board, (1)
P
D
T
A
=25
o
C
mW
Derate above 25
o
C
1.8
556
mW/
o
C
Thermal Resistance, Junction to Ambient
R
o
C
/
W
q
JA
Total Device Dissipation
P
D
Alumina Substrate, (2) T
A
=25
o
C
300
2.4
417
mW
mW/
o
C
o
C
/
W
o
C
Derate above 25
o
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
q
JA
Tj ,Tstg
-55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
=1.0mA)
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
20
–
–
–
–
–
–
–
V
V
V
Emitter-Base Breakdown Voltage
(I
E
=100
m
A)
Collector-Base Breakdown Voltage
(I
C
=100
m
A)
Collector Cutoff Current
(V
CB
=35V)
Emitter Cutoff Current
(V
EB
=4V)
5
40
I
CBO
I
EBO
–
150
150
nA
nA
Rev.O 1/2
LESHAN RADIO COMPANY, LTD.
L9013PLT1G Series
S-L9013PLT1G Series
ON CHARACTERISTICS
DC Current Gain
(I
C
=50mA, V
CE
=1V)
Collector-Emitter Saturation Voltage
(I
C
=500mA,I
B
=50mA)
H
fe
100
–
–
600
0.6
V
CE(S)
–
V
NOTE:
*
P
Q
R
S
H
FE
100~200
150~300
200~400
300~600
SOT-23 (TO-236AB)
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
A
L
2. LEAD THICKNESS SPECIFIED PER
L / F DRAWING WITH
SOLDER PLATING.
3
INCHES
MIN MAX
MILLIMETERS
S
B
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
1
2
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
V
G
K
L
S
V
C
PIN 1.
BASE
2.
EMITTER
3.
COLLECTOR
H
J
D
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 2/2
