LRC-L9014SLT1G

LESHAN RADIO COMPANY, LTD.  

General Purpose Transistors  

NPN Silicon  

L9014QLT1G  

Series  

S-L9014QLT1G  

FEATURE  

ƽ

Complementary to L9014.  

ƽ

We declare that the material of product compliance with RoHS requirements.  

ƽ

S- Prefix for Automotive and Other Applications Requiring Unique Site  

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  

Series  

DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

Shipping  

3

L9014QLT1G  

S-L9014QLT1G  

S-L9014QLT3G  

14Q  

3000/Tape&Reel  

L9014QLT3G  

1

14Q  

14R  

10000/Tape&Reel  

3000/Tape&Reel  

10000/Tape&Reel  

2

L9014RLT1G  

L9014RLT3G  

S-L9014RLT1G  

S-L9014RLT3G  

SOT– 23  

14R  

14S  

14S  

14T  

14T  

3000/Tape&Reel  

10000/Tape&Reel  

3000/Tape&Reel  

10000/Tape&Reel  

L9014SLT1G  

L9014SLT3G  

S-L9014SLT1G  

S-L9014SLT3G  

COLLECTOR  

3

L9014TLT1G  

L9014TLT3G  

S-L9014TLT1G  

S-L9014TLT3G  

1

BASE  

MAXIMUM RATINGS  

2

EMITTER  

Rating  

Symbol  

Value  

Unit  

Collector-Emitter Voltage  

V

CEO  

45  

50  

5

V

Collector-Base Voltage  

Emitter-Base Voltage  

V

CBO  

V

EBO  

I

C  

V

V

Collector current-continuoun  

100  

mA  

THERMAL CHARATEERISTICS  

Characteristic  

Symbol  

Max  

Unit  

Total Device Dissipation FR-5 Board, (1)  

P

D  

T

A

=25

o

C  

225  

1.8  

mW  

Derate above 25

o

C  

mW/

o

C  

Thermal Resistance, Junction to Ambient  

R

556  

JA  

©

Total Device Dissipation  

P

D  

Alumina Substrate, (2) TA=25

o

C  

300  

mW  

Derate above 25

o

C  

2.4  

mW/

o

C  

Thermal Resistance, Junction to Ambient  

R

417  

JA  

©

Junction and Storage Temperature  

T ,T  

-55 to +150

 

o

C  

J

stg  

1. FR–5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

Rev.O 1/4  

LESHAN RADIO COMPANY, LTD.  

L9014QLT1G Series  

S-L9014QLT1G Series  

ELECTRICAL CHARACTERISTICS

 

(T

A

=25

o

C unless otherwise noted)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min  

Typ  

Max  

Unit  

Collector-Emitter Breakdown Voltage  

(I

C

=1.0mA)  

V(BR)

CEO  

45  

–

–

V

Emitter-Base Breakdown Voltage  

(I

E

=100

­

A)  

V(BR)

EBO  

V(BR)

CBO  

5

50  

–

–

–

–

–

–

V

V

Collector-Base Breakdown Voltage  

(I

C

=100

­

A)  

Collector Cutoff Current

 

(V

CB

=40V)  

Emitter Cutoff Current

 

(V

EB

=3V)  

I

CBO  

I

EBO  

100  

100  

nA  

nA  

ON CHARACTERISTICS  

DC Current Gain  

(I

C

=1mA, V

CE

=5V)  

H

FE  

150  

–

–

–

1000  

0.3  

Collector-Emitter Saturation Voltage  

(I

C

=100mA,I

B

=5mA)  

V

CE  

V

NOTE:  

*

Q

R

S

T

H

FE  

150~300  

200~400  

300~600  

400~1000  

Rev.O 2/4  

LESHAN RADIO COMPANY, LTD.  

L9014QLT1G Series  

S-L9014QLT1G Series  

STATIC CHARACTERISTIC  

DC CURRENT GAIN  

BASE-EMITTER SATURATION VOLTAGE  

COLLECTOR-EMITTER SATURATION VOLTAGE  

CURRENT GAIN-BANDWIDTH PRODUCT  

Rev.O 3/4  

LESHAN RADIO COMPANY, LTD.  

L9014QLT1G Series  

S-L9014QLT1G Series  

SOT-23  

NOTES:  

A

1. DIMENSIONING AND TOLERANCING PER ANSI  

L

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: INCH.  

3

S

B

1

2

INCHES  

MAX  

MILLIMETERS  

DIM  

MIN  

MIN  

2.80  

1.20  

0.89  

0.37  

1.78  

0.013  

0.085  

0.35  

0.89  

2.10  

0.45  

MAX  

3.04  

1.40  

1.11  

0.50  

2.04  

0.100  

0.177  

0.69  

1.02  

2.64  

0.60  

V

G

A

B

C

D

G

H

J

0.1102  

0.0472  

0.0350  

0.0150  

0.0701  

0.0005  

0.0034  

0.0140  

0.0350  

0.0830  

0.0177  

0.1197  

0.0551  

0.0440  

0.0200  

0.0807  

0.0040  

0.0070  

0.0285  

0.0401  

0.1039  

0.0236  

C

H

J

D

K

L

K

S

V

PIN 1. BASE  

2. EMITTER  

3. COLLECTOR  

0.037  

0.95  

0.037  

0.95  

0.079  

2.0  

0.035  

0.9  

0.031  

0.8  

inches  

mm  

Rev.O 4/4