LRC-LBC847ALT1G-HW
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LBC847ALT1G
S-LBC847ALT1G
General Purpose Transistors NPN Silicon
SOT23(TO-236)
1. FEATURES
●
Moisture Sensitivity Level: 1
●
ESD Rating – Human Body Model: >4000 V
– Machine Model: >400 V
3 COLLECTOR
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S-prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
1 BASE
2 EMITTER
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC847ALT1G
LBC847ALT3G
1E
3000/Tape&Reel
10000/Tape&Reel
1E
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VCEO
VCBO
VEBO
IC
Limits
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
45
50
6
V
Emitter–Base Voltage
V
Collector Current — Continuous
100
mA
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
PD
225
1.8
mW
mW/ºC
ºC/W
Thermal Resistance,
RΘJA
556
Junction–to–Ambient
Total Device Dissipation,
Alumina Substrate (Note 2) @ TA = 25ºC
Derate above 25ºC
PD
300
2.4
mW
mW/ºC
ºC/W
Thermal Resistance,
RΘJA
417
Junction–to–Ambient
Junction and
Storage temperature
1. FR-5 = 1.0 x 0.75 x 0.062 in.
TJ,Tstg
−55
∼
+150
º
C
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Leshan Radio Company, LTD.
Rev.B Jun. 2020
1/5
LBC847ALT1G, S-LBC847ALT1G
General Purpose Transistors NPN Silicon
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Symbol
Min.
Typ.
Max.
Unit
VBR(CEO)
VBR(CES)
VBR(CBO)
VBR(EBO)
45
–
–
V
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
–
–
–
–
–
–
50
50
6
V
V
V
Collector–Base Breakdown Voltage
(IC = 10 µA)
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
Collector Cutoff Current
ICBO
nA
µA
(VCB = 30 V)
–
–
–
–
15
5
(VCB = 30 V, TA = 150°C)
Emitter-Base cut-off current
(IC = 0, VEB = 5 V)
IEBO
nA
–
–
50
Collector-Emitter cutoff Current
(VCE
＝
45V, IB=0)
ICEO
μA
–
–
10
ON CHARACTERISTICS
DC Current Gain
HFE
110
180
220
(IC = 2.0 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage
VCE(sat)
–
–
–
–
0.25
0.6
V
VBE(sat)
VBE(on)
–
–
0.7
0.9
–
–
V
mV
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
580
–
660
–
700
770
fT
MHz
pF
100
–
–
–
–
Cobo
4.5
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
dB
NF
–
–
10
(IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k
Ω
f = 1.0 kHz, BW = 200 Hz)
Leshan Radio Company, LTD.
2/5
Rev.B Jun. 2020
LBC847ALT1G, S-LBC847ALT1G
General Purpose Transistors NPN Silicon
6.ELECTRICAL CHARACTERISTICS CURVES
300
250
200
150
100
50
1.2
VCE=5V
VCE=1V
150
℃
1
0.8
0.6
0.4
0.2
0
-55
℃
25
℃
25
℃
-55
℃
150
℃
0
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
IC,Collector Current(A)
IC,Collector Current(A)
VBE(on) vs.
HFE vs. IC
1.2
1
0.2
0.18
0.16
0.14
0.12
0.1
IC/IB=20
IC/IB=20
-55
℃
0.8
0.6
0.4
0.2
0
25
℃
150
℃
25
℃
0.08
0.06
0.04
0.02
0
150
℃
-55
℃
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
IC,Collector Current(A)
VCESAT vs.
0.1
IC,Collector Current(A)
VBESAT vs.
Leshan Radio Company, LTD.
Rev.B Jun. 2020
3/5
LBC847ALT1G, S-LBC847ALT1G
General Purpose Transistors NPN Silicon
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
2
1.8
1.6
1.4
1.2
1
25
Ta=25
℃
f=1MHz
Ta=25
℃
20
IC=200m
A
100mA
10mA
20mA 50mA
15
10
5
Cibo
0.8
0.6
0.4
0.2
0
Cobo
0
0
10
20
30
VR(V)
40
50
2.0E-05
2.0E-04
2.0E-03
2.0E-02
IB,Base Current(A)
Capacitance
VCESAT vs.
Leshan Radio Company, LTD.
4/5
Rev.B Jun. 2020
LBC847ALT1G, S-LBC847ALT1G
General Purpose Transistors NPN Silicon
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM
MAX MIN NOM
MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001
0.002 0.004
0.5 0.015
0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18
0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11
0.114 0.12
1.4 0.047
0.051 0.055
2.04 0.07
0.075 0.081
0.3 0.004
0.008 0.012
L1 0.35
0.54 0.69
0.014 0.021 0.029
H
E
2.10
0°
2.4
—
2.64 0.083
0.094 0.104
10° 0°
— 10°
θ
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
5/5
Rev.B Jun. 2020
