LRC-LBC847BN3T5G

LBC847BN3T5G  

S-LBC847BN3T5G  

General Purpose Transistors NPN Silicon  

1. FEATURES  

SOT883  

●

Moisture Sensitivity Level: 1  

●

ESD Rating – Human Body Model: >4000 V  

– Machine Model: >400 V  

3 COLLECTOR  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

1 BASE  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

2 EMITTER  

2. DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

Shipping  

LBC847BN3T5G  

1F  

10000/Tape&Reel  

3. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VCEO  

VCBO  

VEBO  

IC  

Limits  

Unit  

V

Collector–Emitter Voltage  

Collector–Base Voltage  

45  

50  

6

V

Emitter–Base Voltage  

V

Collector Current — Continuous  

100  

mA  

4. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

Limits  

Unit  

Total Device Dissipation,  

PD  

FR−5 Board (Note 1) @ TA = 25ºC  

Derate above 25ºC  

250  

2

mW  

mW/ºC  

ºC/W  

Thermal Resistance,  

RΘJA  

500  

Junction–to–Ambient(Note 1)  

Junction and

 

Storage temperature  

1. FR–5 = 1.0×0.75×0.062 in.  

TJ,Tstg

−55

∼

+150  

º

C  

Leshan Radio Company, LTD.  

Rev.A May.

 

2019  

1/6  

LBC847BN3T5G,S-LBC847BN3T5G  

General Purpose Transistors NPN Silicon  

5. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min.  

45  

50  

50  

6

Typ.  

–

Max.  

–

Unit  

V

Collector–Emitter Breakdown Voltage  

(IC = 10 mA)  

VBR(CEO)  

V

V

V

Collector–Emitter Breakdown Voltage  

(IC = 10 µA, VEB = 0)  

VBR(CES)  

VBR(CBO)  

VBR(EBO)  

Collector–Base Breakdown Voltage  

(IC = 10 µA)  

–

–

–

–

Emitter–Base Breakdown Voltage  

(IE = 1.0 µA)  

Collector Cutoff Current  

ICBO  

nA  

µA  

(VCB = 30 V)  

–

–

–

–

15  

5

(VCB = 30 V, TA = 150°C)  

ON CHARACTERISTICS  

DC Current Gain  

HFE  

(IC = 2.0 mA, VCE = 5.0 V)  

Collector–Emitter Saturation Voltage  

(IC = 10 mA, IB = 0.5 mA)  

(IC = 100 mA, IB = 5.0 mA)  

Base–Emitter Saturation Voltage  

(IC = 10 mA, IB = 0.5 mA)  

(IC = 100 mA, IB = 5.0 mA)  

Base–Emitter Voltage  

200  

290  

450  

V

V

VCE(sat)  

–

–

–

–

0.25  

0.4  

VBE(sat)  

VBE(on)  

–

–

0.7  

0.9  

–

–

mV  

(IC = 2.0 mA, VCE = 5.0 V)  

(IC = 10 mA, VCE = 5.0 V)  

SMALL–SIGNAL CHARACTERISTICS  

Current–Gain — Bandwidth Product  

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)  

Output Capacitance  

580  

–

660  

–

700  

770  

MHz  

pF  

fT  

100  

–

–

–

–

Cobo  

(VCB = 10 V, f = 1.0 MHz)  

Noise Figure  

4.5  

dB  

NF  

(IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k

Ω

 

f = 1.0 kHz, BW = 200 Hz)  

–

–

10  

2/6  

Leshan Radio Company, LTD.  

Rev.A May.

 

2019  

LBC847BN3T5G,S-LBC847BN3T5G  

General Purpose Transistors NPN Silicon  

6.ELECTRICAL CHARACTERISTICS CURVES  

IB=1mA,1.5mA,2mA  

IB=500uA  

0.10  

0.08  

0.06  

0.04  

0.02  

0.00  

500  

450  

400  

350  

300  

250  

200  

150  

100  

50  

150

℃

 

25

℃  

IB=400uA  

IB=300uA  

IB=200uA  

IB=100uA  

-55

℃  

VCE=10V  

0

0.0001  

0.001  

0.01  

0.1  

0

1

2

3

4

5

VCE Collector to Emittor Voltage(V)  

IC,Collector Current(A)  

IC vs. VCE  

HFE vs. IC  

IC=50mA  

IC=40mA  

1.2  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

IC=200mA  

IC=10mA  

1.0  

-55

℃  

25

℃  

IC=150mA  

IC=100mA  

IC=30mA  

IC=20mA  

0.8  

0.6  

0.4  

0.2  

150

℃  

IC/IB=10  

0.0  

0.02  

0.2  

2

20  

0.0001  

0.001  

0.01  

0.1  

IC,Collector Current(A)  

IB Base Current(mA)  

VCE vs. IB  

VBE(sat) vs. IC  

Rev.A May.

 

2019  

Leshan Radio Company, LTD.  

3/6  

LBC847BN3T5G,S-LBC847BN3T5G  

General Purpose Transistors NPN Silicon  

6.

ELECTRICAL CHARACTERISTICS CURVES(Con.)  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

VCE=5.0V  

0

IC/IB=1  

-55

℃

 

-55

℃  

25

℃  

25

℃  

150  

℃

150

℃  

0.0001  

0.001  

0.01  

0.1  

0.0001  

0.001  

0.01  

0.1  

IC,Collector Current(A)  

IC Collector Current(A)  

VBE(on) vs. IC (VCE=5V)  

VCE(sat) vs. IC  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

-1.0  

-1.2  

-1.4  

-1.6  

-1.8  

-2.0  

-2.2  

-2.4  

-2.6  

-2.8  

-3.0  

-55

℃  

25

℃  

150

℃  

VCE=10V  

0.0001  

0.0010  

0.0100  

0.1000  

0.0001  

0.001  

0.01  

0.1  

IC,Collector Current(A)  

IC Collector Current(A)  

VBE(on) vs. IC (VCE=10V)  

Base-Emitter Temperature  

Coefficient  

Leshan Radio Company, LTD.  

Rev.A May.

 

2019  

4/6  

LBC847BN3T5G,S-LBC847BN3T5G  

General Purpose Transistors NPN Silicon  

6.

ELECTRICAL CHARACTERISTICS CURVES(Con.)  

16  

14  

12  

10  

8

f=1MHz  

Ta=25

℃

 

Cibo  

6

Cobo  

4

2

0

0.1  

1

10  

100  

VR Reverse Voltage(V)  

Capacitance  

Leshan Radio Company, LTD.  

Rev.A May.

 

2019  

5/6  

LBC847BN3T5G,S-LBC847BN3T5G  

General Purpose Transistors NPN Silicon  

7.OUTLINE AND DIMENSIONS  

SOT883  

MIN TYP MAX  

0.95 1.00 1.05  

0.55 0.60 0.65  

DIM  

D

E

e

–

–

0.64  

0.34  

–

–

e1  

L

0.19 0.24 0.29  

L1 0.22

 

0.27 0.32  

0.10 0.15 0.20  

b1 0.44

 

0.49 0.54  

b

A

0.43 0.48 0.53  

0.05  

A1  

0

–

All Dimensions in mm  

8.SOLDERING FOOTPRINT  

Dimensions (mm)  

c

0.70  

X

1.10  

0.40  

0.40  

0.20  

0.55  

X1  

X2  

Y

Y1  

Leshan Radio Company, LTD.  

Rev.A May.

 

2019  

6/6