LRC-LBC850CLT1G
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LBC850CLT1G
S-LBC850CLT1G
General Purpose Transistors NPN Silicon
SOT23(TO-236)
1. FEATURES
●
Moisture Sensitivity Level: 1
●
ESD Rating – Human Body Model: >4000 V
– Machine Model: >400 V
3
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
COLLECTOR
1
BASE
2
EMI
T
T
E
R
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC850CLT1G
LBC850CLT3G
2G
3000/Tape&Reel
10000/Tape&Reel
2G
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VCEO
VCBO
VEBO
IC
Limits
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
45
50
6
V
Emitter–Base Voltage
V
Collector Current — Continuous
100
mA
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
PD
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
225
1.8
mW
mW/ºC
ºC/W
Thermal Resistance,
RΘJA
556
Junction–to–Ambient(Note 1)
Total Device Dissipation,
PD
Alumina Substrate (Note 2) @ TA = 25ºC
Derate above 25ºC
300
2.4
mW
mW/ºC
ºC/W
Thermal Resistance,
RΘJA
417
Junction–to–Ambient(Note 2)
Junction and Storage temperature
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TJ,Tstg
−55
∼
+150
º
C
Leshan Radio Company, LTD.
Rev.B Aug. 2021
1/5
LBC850CLT1G,S-LBC850CLT1G
General Purpose Transistors NPN Silicon
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Symbol
Min.
Typ.
Max.
Unit
VBR(CEO)
45
–
–
V
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
VBR(CES)
VBR(CBO)
VBR(EBO)
50
50
6
–
–
–
–
–
–
V
V
V
Collector–Base Breakdown Voltage
(IC = 10 µA)
Emitter–Base Breakdown Voltage
(IE = 1.0 µA)
Collector Cutoff Current
ICBO
nA
µA
(VCB = 30 V)
–
–
–
–
15
5
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
HFE
420
520
800
(IC = 2.0 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base–Emitter Voltage
VCE(sat)
V
V
–
–
–
–
0.25
0.6
VBE(sat)
VBE(on)
–
–
0.7
0.9
–
–
mV
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
580
–
660
–
700
770
fT
100
–
–
–
–
MHz
pF
Cobo
4.5
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
NF
–
–
4.0
dB
(IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 k
Ω
f = 1.0 kHz, BW = 200 Hz)
Leshan Radio Company, LTD.
Rev.B Aug. 2021
2/5
LBC850CLT1G,S-LBC850CLT1G
General Purpose Transistors NPN Silicon
6.ELECTRICAL CHARACTERISTICS CURVES
1200
0.10
0.08
0.06
0.04
0.02
0.00
VCE=1V
IB=200µA
1000
800
600
400
200
0
150
℃
25
℃
IB=140µA
IB=100µA
IB=80µA
IB=60µA
IB=40µA
IB=20µA
-55
℃
0.001
0.01
0.1
0
1
2
3
4
5
IC Collector Current(A)
VCE Collector to Emittor Voltage(V)
IC vs. VCE
HFE vs. IC
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
IC=150mA
IC=100mA
IC=10mA
IC=20mA
-55
℃
25
℃
IC=50mA
IC=30mA
150
℃
VCE=5.0V
0.002
0.02
0.2
2
20
0.0001
0.001
0.01
0.1
IB Base Current(mA)
VCE vs. IB
IC Collector Current(A)
VBE(on) vs. IC
Leshan Radio Company, LTD.
Rev.B Aug. 2021
3/5
LBC850CLT1G,S-LBC850CLT1G
General Purpose Transistors NPN Silicon
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IC/IB=20
-55
℃
25
℃
150
℃
150
℃
25
℃
IC/IB=20
-55
℃
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
IC Collector Current(A)
IC Collector Current(A)
VCE(sat) vs. IC
VBE(sat) vs. IC
14
12
10
8
f=1.0MHz
Ta=25
℃
Cibo
6
Cobo
4
2
0
0.1
1
10
100
VR Reverse Voltage(V)
Capacitance
Leshan Radio Company, LTD.
Rev.B Aug. 2021
4/5
LBC850CLT1G,S-LBC850CLT1G
General Purpose Transistors NPN Silicon
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM
MAX MIN NOM
MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001
0.002 0.004
0.5 0.015
0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18
0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11
0.114 0.12
1.4 0.047
0.051 0.055
2.04 0.07
0.075 0.081
0.3 0.004
0.008 0.012
L1 0.35
0.54 0.69
0.014 0.021 0.029
H
E
2.10
0°
2.4
—
2.64 0.083
0.094 0.104
10° 0°
— 10°
θ
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.B Aug. 2021
5/5
DISCLAIMER
●
Before you use our Products, you are requested to carefully read this document and fully understand its
contents. LRC
shall not
be in any way responsible or
liable for failure,
malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
All information contained in this document is current as of the issuing date and subject to change without
any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a
LRC sales representative.
●
