LRC-LBC857BWT1G
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LESHAN RADIO COMPANY, LTD.
LBC856AWT1G,BWT1G
LBC857AWT1G,BWT1G
CWT1G
LBC858AWT1G,BWT1G
CWT1G
S-LBC856AWT1G,BWT1G
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
S-LBC857AWT1G,BWT1G
CWT1G
S-LBC858AWT1G,BWT1G
Features
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
CWT1G
MAXIMUM RATINGS
3
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC856
–65
BC857
–45
BC858
–30
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
1
–80
–50
–30
V
2
–5.0
–100
–5.0
–100
–5.0
–100
V
SOT– 323 / SC-70
mAdc
3
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
Symbol
Max
Unit
1
T
o
tal Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
P
D
150
mW
BASE
Thermal Resistance, Junction to Ambient
Junction and Storage
T
e
mperature
R
θ
JA
833
°C/W
°C
2
T
J
, T
stg
–55 to +150
EMITTER
DEVICE MARKING
(S-)LBC856AWT1G= 3A; (S-)LBC856BWT1G= 3B;(S-) LBC857AWT1G= 3E; (S-)LBC857BWT1G = 3F;
(S-)LBC857CWT1G= 3G;(S-)LBC858AWT1G= 3J; (S-)LBC858BWT1G= 3K;(S-) LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
LBC856 Series
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
v
v
v
v
LBC857 Series
LBC858 Series
—
Collector–Emitter Breakdown Voltage
—
LBC856 Series
LBC857B Only
LBC858 Series
(I
C
= –10
µ
A, V
EB
= 0)
—
—
Collector–Base Breakdown Voltage
—
LBC856 Series
LBC857 Series
LBC858 Series
(I
C
= –
10
µ
A)
—
—
Emitter–Base Breakdown Voltage
LBC856 Series
—
LBC857 Series
LBC858 Series
(I
E
= –
1.0
µ
A)
V
(BR)EBO
—
—
Collector Cutoff Current
(V
CB
= – 30 V)
(V
CB
= –
30 V, T
A
= 150°C)
– 15
– 4.0
nA
I
CBO
—
µ
A
1.FR–5=1.0 x 0.75 x 0.062in
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC85
7
A
W
T1G, BWT1G,CWT1G
LBC858AWT1G, BWT1G,
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC85
7
A
W
T1G, BWT1G,CWT1G
S-LBC858AWT1G, BWT1G,
CWT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
(I
C
= –2.0 mA, V
CE
= –5.0 V)
125
220
180
290
250
475
LBC857C, LBC858C
420
520
800
Collector–Emitter Saturation Voltage (I
C
= –10 mA,
I
B
= – 0.5 mA)
Collector–Emitter Saturation Voltage
(I
C
= –100 mA,
I
B
= – 5.0 mA)
Base–Emitter Saturation Voltage (
I
C
= –10 mA,
I
B
= –0.5 mA)
Base–Emitter Saturation Voltage
(
I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter Voltage (
I
C
= –2.0 mA, V
CE
= –5.0 V)
—
—
—
—
– 0.3
– 0.65
—
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
—
– 0.7
– 0.9
—
—
—
– 0.6
—
– 0.75
– 0.82
V
Base–Emitter Voltage
(I
C
= –10 mA,
V
CE
= –5.0 V)
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
100
—
—
MHz
(I
C
= – 10 mA,
V
CE
= – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= – 10 V, f = 1.0 MHz)
Noise Figure
C
ob
NF
—
—
4.5
10
pF
dB
––
––
(I
C
= – 0.2 mA,
V
CE
= – 5.0 V
dc
, R
S
= 2.0 k
Ω
, f
=1.0 kHz, BW= 200 Hz)
)
ORDERING INFORMATION
(
Device
–
Pb Free
Package
Shipping
LBC856AWT1G series
SOT-23
3000/Tape & Reel
10000/Tape & Reel
LBC856AWT3G series
SOT-23
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC85
7
A
W
T1G, BWT1G,CWT1G
LBC858AWT1G, BWT1G,
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC85
7
A
W
T1G, BWT1G,CWT1G
S-LBC858AWT1G, BWT1G,
CWT1G
LBC857/LBC858
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
2.0
1.5
T
A
= 25°C
V
CE
= –10 V
T
A
= 25°C
V
BE(sat)
@
I
C
/I
B
=10
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
0.2
V
CE(sat)
@
I
C
/
I
B
= 10
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50 –100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–2.0
–1.6
–1.2
–0.8
–0.4
0
1.0
–55°C to +125°C
T
A
= 25°C
1.2
1.6
2.0
2.4
2.8
I
C
= –50 mA
I
C
=
I
C
= –200 mA
–10 mA
I
C
= –100 mA
I
C
= –
20 mA
–0.02
–0.1
–1.0
–10 –20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
Figure 3. Collector Saturation Region
400
300
10.0
C
ib
7.0
5.0
T
A
=25°C
200
150
V
CE
= –10V
T
A
= 25°C
100
80
C
ob
3.0
2.0
60
40
30
20
1.0
–0.4
–0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20 –30
–50
I
C
, COLLECTOR CURRENT (mAdc)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Current–Gain – Bandwidth Product
Figure 5. Capacitances
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC85
7
A
W
T1G, BWT1G,CWT1G
LBC858AWT1G, BWT1G,
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC85
7
A
W
T1G, BWT1G,CWT1G
S-LBC858AWT1G, BWT1G,
CWT1G
LBC856
–1.0
T
J
= 25°C
V
BE(sat)
@
I
C
/
I
B
=10
BE
@V
CE
= –5.0 V
V
CE
= –5.0V
–0.8
–0.6
–0.4
–0.2
0
T
A
= 25°C
2.0
1.0
V
0.5
0.2
V
CE(sat)
@ I
C
/
I
B
= 10
–0.1–0.2
–1.0 –2.0
–5.
0
–
10 –20
–50 –100–200
–0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100
–200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
Figure 7. DC Current Gain
–2.0
–1.6
–1.2
–0.8
–0.4
0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–100mA –200mA
I
C
=
–20mA
–50mA
–10mA
θ
VB
for V
BE
–55°C to 125°C
T
J
= 25°C
–0.02
–0.05 –0.1
–0.2
–0.5 –1.0
–2.0
–5.0 –10
–20
–0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100
–200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
40
20
10
V
CE
= –5.0V
500
200
T
J
= 25°C
C
ib
100
50
6.0
4.0
C
ob
20
2.0
–0.1 –0.2
–0.5
–1.0 –2.0
–5.0 –10
–20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC85
7
A
W
T1G, BWT1G,CWT1G
LBC858AWT1G, BWT1G,
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC85
7
A
W
T1G, BWT1G,CWT1G
S-LBC858AWT1G, BWT1G,
CWT1G
1.0
0.7
D=0.5
0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
R
Z
R
θ
JC
(t) = r(t) R
θ
JC
0.1
0.1
θ
JC
= 83.3°C/W MAX
θ
JA
(t) = r(t) R
θ
JA
P
(pk)
SINGLE PULSE
0.07
0.05
θ
JA
= 200°C/W MAX
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
t
2
DUTY CYCLE, D =
t
1
/t
2
0.03
0.02
T
J(pk)
– T
C
= P
(pk)
R
θ
JC
(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k
10k
t, TIME (ms)
Figure 13. Thermal Response
–200
The safe operating area curves indicate I
C
–V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
1s
3 ms
–100
–50
T
J
= 25°C
T
A
= 25°C
The data of Figure 14 is based upon
T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are valid for
BC558
BC557
BC556
duty cycles to 10% provided
T
J(pk)
<
150°C.
T
J(pk)
may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–10
–5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45
–65 –100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
Rev.O 5/6
LESHAN RADIO COMPAN
Y
,
L
TD.
LBC856AWT1G, BWT1G
LBC85
7
A
W
T1G, BWT1G,CWT1G
LBC858AWT1G, BWT1G,
CWT1G
S-LBC856AWT1G, BWT1G
S-LBC85
7
A
W
T1G, BWT1G,CWT1G
S-LBC858AWT1G, BWT1G,
CWT1G
SC 70
/ SOT
323
D
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
e1
Y14.5M, 1982.
2. CONTROLLING
DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
H
E
c
2.00
2.40
0.079
0.095
A2
A
0.05 (0.002)
L
GENERIC
A1
MARKING DIAGRAM
SOLDERING FOOTPRINT*
M
XX
0.65
0.025
0.65
0.025
1
XX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
1.9
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “
G
”,
may or may not be present.
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev.O 6/6
