LRC-LBC857CDW1T1G
| Part # | LRC-LBC857CDW1T1G |
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LESHAN RADIO COMPANY, LTD.
Dual General Purpose
T
r
ansistors
LBC85** DW1T1G
S-LBC85** DW1T1G
6
5
4
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
1
2
3
RoHS requirements.
We declare that the material of product compliance with
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT-363
(3)
Q
(2)
(1)
Device Marking:
•
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
1
Q
2
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Symbol BC856 BC857 BC858
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
V
V
–65
–80
–45
–50
–30
–30
V
V
CEO
CBO
EBO
DEVICE MARKING
–5.0
–100
–5.0
–100
–5.0
–100
V
Collector Current –
Continuous
I
C
mAdc
THERMAL CHARACTERISTICS
See Table
Characteristic
Symbol
Max
Unit
T
o
tal Device Dissipation
Per Device
P
380
250
mW
D
FR–5 Board (Note 1.)
T =
25
°
C
A
Derate Above 25
°
C
3.0
mW/
°
C
°
C/W
Thermal Resistance,
Junction to Ambient
R
328
q
JA
Junction and Storage
T
e
mperature Range
T , T
–55 to +150
°
C
J
stg
1. FR–5
= 1.0 x 0.75 x 0.062 in
ORDERING INFORMATION
Device
Shipping
LBC85*BDW1T1G
3000/Tape & Reel
10000/Tape & Reel
LBC85*BDW1T3G
Rev.O 1/6
LESHAN RADI
O
C
OMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I =
–10 mA)
C
V
V
(BR)CEO
LBC856 Series
–65
–45
–30
–
–
–
–
–
–
L
BC857 Series
L
BC858 Series
Collector–Emitter Breakdown Voltage
V
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I =
–10
µ
A, V
= 0)
L
BC856 Series
L
BC857 Series
L
BC858 Series
–80
–50
–30
–
–
–
–
–
–
C
EB
Collector–Base Breakdown Voltage
(I =
–10
m
A)
C
V
V
L
BC856 Series
L
BC857 Series
L
BC858 Series
–80
–50
–30
–
–
–
–
–
–
Emitter–Base Breakdown Voltage
(I =
–1.0
m
A)
E
L
BC856 Series
L
BC857 Series
L
BC858 Series
–5.0
–5.0
–5.0
–
–
–
–
–
–
Collector Cutoff Current (V
= –30 V)
I
–
–
–
–
–15
–4.0
nA
µ
A
CB
CBO
Collector Cutoff Current
(V =
–30
V
, T
= 150
°
C)
CB
A
ON CHARACTERISTICS
DC Current Gain
(I =
–10
µ
A, V
= –5.0 V)
h
FE
–
–
–
90
150
270
–
–
–
–
L
BC856A
L
BC856B,
L
BC857B,
L
BC858B
L
BC857C,
L
BC858C
C
CE
L
BC856A
L
BC856B,
L
BC857B,
L
BC858B
L
BC857C,
L
BC858C
125
220
420
180
290
520
250
475
800
(I =
–2.0 mA, V
= –5.0 V)
C
CE
Collector–Emitter Saturation Voltage
(I =
–10 mA, I
= –0.5 mA)
V
V
V
V
CE(sat)
BE(sat)
–
–
–
–
–0.3
–0.65
C
B
(I =
–100 mA, I
= –5.0 mA)
C
B
Base–Emitter Saturation Voltage
(I =
–10 mA, I
= –0.5 mA)
V
–
–
–0.7
–0.9
–
–
C
B
(I =
–100 mA, I
= –5.0 mA)
C
B
Base–Emitter On Voltage
(I =
–2.0 mA, V
= –5.0 V)
V
BE(on)
–0.6
–
–
–
–0.75
–0.82
C
CE
(I =
–10 mA, V
= –5.0 V)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
f
100
–
–
–
–
–
MHz
pF
T
(I =
–10 mA, V
= –5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V =
–10
V
, f =
1
.0 MHz)
CB
C
4.5
10
ob
Noise Figure
NF
–
dB
(I =
–0.2 mA, V
= –5.0 Vdc, R
= 2.0 k
Ω
,
C
CE
S
f = 1.0 kHz, BW = 200 Hz)
Rev.O 2/6
LESHAN RADI
O
C
OMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
TYPICAL CHARACTERISTICS –
L
BC856
-1.0
T =
25
°
C
J
V
= -5.0 V
CE
-0.8
T =
25
°
C
A
V
@ I
/I =
10
C B
BE(sat)
2.0
1.0
0.5
-0.6
-0.4
-0.2
0
V
@ V
= -5.0 V
CE
BE
0.2
V
@ I
/I =
10
C B
CE(sat)
-20
-50 -100
-200
-0.1 -0.2
-1.0 -2.0
-10 -20
-100
-50
-200
-0.2 -0.5
-1.0 -2.0
-5.0 -10
-5.0
I ,
COLLECTOR CURRENT (AMP)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. “On” Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-100 mA
-200 mA
I =
C
-10 mA
-20 mA
-50 mA
θ
for V
BE
VB
-55
°
C to 125
°
C
T =
25
°
C
J
-0.02 -0.05
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-0.2 -0.5
-1.0 -2.0
-5.0 -10
-20
-50 -100
-200
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
40
20
V
= -5.0 V
CE
500
T =
25
°
C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-1.0
-10
-100
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Capacitance
Figure 6. Current–Gain – Bandwidth Product
Rev.O 3/6
LESHAN RADI
O
C
OMP ANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
TYPICAL CHARACTERISTICS –
L
BC857/
L
BC858
2.0
1.5
-1.0
T =
25
°
C
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
A
V
= -10 V
CE
V
@ I
/I =
10
C B
BE(sat)
T =
25
°
C
A
1.0
0.7
0.5
V
BE(on)
@ V
= -10 V
CE
0.3
0.2
V
@ I
/I =
10
C B
CE(sat)
-0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100
-200
-0.1
-1.0
-10
-100
-0.2
-0.5
-2.0
-5.0
-20
-50
I ,
COLLECTOR CURRENT (mAdc)
C
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 7. Normalized DC Current Gain
Figure 8. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0
-55
°
C to +125
°
C
T =
25
°
C
A
I =
C
-10 mA
I =
-50 mA
C
I =
-200 mA
C
I =
-100 mA
C
I =
-20 mA
C
-0.02
-0.1
-1.0
-10 -20
-0.2
-1.0
-10
-100
I ,
BASE CURRENT (mA)
B
I ,
COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature
Coefficient
10
7.0
5.0
400
300
C
ib
T =
25
°
C
A
200
150
V
= -10 V
CE
T =
25
°
C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
-0.4
20
-0.5
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30
-40
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
V ,
REVERSE VOLTAGE (VOLTS)
R
I ,
COLLECTOR CURRENT (mAdc)
C
Figure 11. Capacitances
Figure 12. Current–Gain – Bandwidth Product
Rev.O 4/6
LESHAN RADI
O
C
OMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
Z
(t) = r(t) R
θ
JA
θ
JA
P
(pk)
R
= 328
°
C/W MAX
θ
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.01
0.01
t
2
READ TIME AT t
1
T
– T
= P
C
R
(t)
DUTY CYCLE, D = t
/t
1
J(pk)
(pk)
θ
JC
2
SINGLE PULSE
0.001
0
1.0
10
100
1.0Ăk
10Ăk
100Ăk
1.0ĂM
t, TIME (ms)
Figure 13. Thermal Response
-200
1 s
3 ms
-100
-50
The safe operating area curves indicate I
–V limits
of the
C
CE
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
T =
25
°
C
J
T =
25
°
C
A
The data of Figure 14 is based upon T
= 150
°
C; T
or T
C A
J(pk)
BC558
BC557
BC556
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided T
≤
150
°
C. T
may be
J(pk)
J(pk)
-10
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
Rev.O 5/6
LESHAN RADI
O
C
OMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G
LBC857CDW1T1G, LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G
S-LBC857CDW1T1G, S-LBC858BDW1T1G,S-LBC858CDW1T1G
SC-88/SOT
–
363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
1.80
1.15
0.80
0.10
MAX
2.20
6
1
5
4
3
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
S
–
B
–
1.35
2
1.10
0.30
0.026 BSC
0.65 BSC
0.10
D
6 P L
M
M
B
—
0.004
0.010
0.012
—
0.2 (0.008)
0.004
0.004
0.10
0.10
0.25
N
K
N
S
0.30
0.008 REF
0 .20 REF
2.20
J
0.079
0.087
2.00
C
PIN 1. EMITTER 2
2
.
B
ASE 2
K
3
.
C
OLLECTOR 1
4.EMITTER 1
5
.
B
ASE 1
H
6.COLLECTOR 2
0.5 mm (min)
1.9 mm
Rev.O 6/6
