LRC-LBSS4350SY3T1G
| Part # | LRC-LBSS4350SY3T1G |
Download  | LRC-LBSS4350SY3T1G |
LBSS4350SY3T1G
S-LBSS4350SY3T1G
NPN TRANSISTOR
1
2
1. FEATURES
3
●
Low collector-to-emitter saturation voltage.
●
Fast switching speed.
SOT
89
●
Large current capacity and wide ASO.
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
2
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
1
3
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS4350SY3T1G
A3
1000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VCEO
VCBO
VEBO
IC
Limits
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
50
60
6
V
V
3
A
Collector Current(Pulse)
ICP
6
A
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
PD
550
mW
Board (Note 1) @ TA = 25ºC
FR−
4
Derate above 25ºC
mW/ºC
ºC/W
4.4
Thermal Resistance,
RΘJA
225
Junction–to–Ambient
Junction and
Storage temperature
TJ,Tstg
−55
∼
+150
º
C
1.PCB Si
ze:30.0mm
×
25.0mm
×
1.6mm,FR-4 Board;
Rev.E Sep.
2021
Leshan Radio Company, LTD.
1/5
LBSS4350SY3T1G,S-LBSS4350SY3T1G
NPN TRANSISTOR
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Collector Cutoff Current
µA
ICBO
–
–
1
(VCB =40V, IE =0 )
Emitter Cut-off Current
(VEB =4V, IC =0)
µA
IEBO
HFE
–
–
1
DC Current Gain
(VCE =2V, IC =100mA)
(VCE =2V, IC =3A)
200
35
–
–
500
–
Collector–Emitter Saturation Voltage
(IC =2A, IB =100mA)
V
V
VCE(sat)
VBE(sat)
fT
–
–
–
–
0.19
0.94
14
8
1
5
0.5
1.2
–
Base–Emitter Saturation Voltage
(IC =2A, IB =100mA)
Transition Frequency
MHz
pF
(VCE =10V, IC =50mA, f=100MHz)
Output Capacitance
Cob
–
(VCB = 10 V, f = 1.0 MHz, IE=0)
td
tr
–
–
–
–
10
9
–
–
–
–
Delay Time
Rise Time
Storage Time
Fall Time
(VCC=15V,VBE=-2V,
IC=1A,IB1=0.1A)
ns
439
73
ts
tf
(VCC=15V,IC=1A,
IB1=IB2=0.1A)
Rev.E Sep.
2021
Leshan Radio Company, LTD.
2/5
LBSS4350SY3T1G,S-LBSS4350SY3T1G
NPN TRANSISTOR
6.ELECTRICAL CHARACTERISTICS CURVES
3.0
2.5
2.0
1.5
1.0
0.5
0.0
700
600
500
400
300
200
100
0
VCE=2.0V
IB=10mA
125
℃
25
℃
IB=8mA
IB=6mA
IB=4mA
IB=3mA
IB=2mA
-55
℃
IB=1mA
4
0
1
2
3
5
0.001
0.01
0.1
1
10
VCE(V)
IC(A)
IC vs. VCE
HFE vs. IC
1.0
0.8
0.6
0.4
0.2
5
4
3
2
1
IC=500mA
IC=400mA
IC=300mA
IC=200mA
-55
℃
IC=10mA
IC=100mA
25
℃
125
℃
VCE=2.0V
0
0.001
0.01
0.1
IC(A)
1
10
0.002
0.02
0.2
2
20
IB(mA)
VCE vs. IB
VBE(on) vs. IC
Rev.E Sep.
2021
3/5
Leshan Radio Company, LTD.
LBSS4350SY3T1G,S-LBSS4350SY3T1G
NPN TRANSISTOR
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.25
0.20
0.15
0.10
0.05
0.00
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=20
125
℃
-55
℃
25
℃
25
℃
-55
℃
125
℃
IC/IB=20
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC(A)
IC(A)
VCE(sat) vs. IC
VBE(sat) vs. IC
350
300
250
200
150
100
50
1.0
0.8
0.6
0.4
0.2
0.0
f=1.0MHz
Ta=25
℃
Cibo
Cobo
PCB Size:
30.0mm
×
25.0mm
×
1.6mm(FR4)
0
0.1
1
10
100
0
25
50
75
100
125
150
Ta, Ambient Temperature (
℃
)
VR(V)
Power Derating Curve
Capacitance
Rev.E Sep.
2021
Leshan Radio Company, LTD.
4/5
LBSS4350SY3T1G,S-LBSS4350SY3T1G
NPN TRANSISTOR
7
.OUTLINE AND DIMENSIONS
8
.SOLDERING FOOTPRINT
Rev.E Sep.
2021
Leshan Radio Company, LTD.
5/5
DISCLAIMER
●
Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee.
The curve of test items without electric parameter is used as reference only.
●
Before you use our Products for new Project, you are requested to carefully read this document and fully under-
-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
●
All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using LRC’s Products,please confirm the latest information with a LRC sales represe-
-ntative.
