LRC-LBSS84DW1T1G
| Part # | LRC-LBSS84DW1T1G |
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LESHAN RADIO COMPANY, LTD.
Power MOSFET
mAmps, 50 Volts
130
P–Channel SC88
LBSS84DW1T1G
S-LBSS84DW1T1G
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
•
Energy Efficient
•
Miniature SC88 Surface Mount Package Saves Board Space
•
Pb-Free Package is available.
•
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
3
2
1
Symbol
V
DSS
Value
-50
Unit
V
dc
V
dc
mA
Rating
D
2
G
1
S
1
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
V
GS
20
Drain Current
– Continuous @ T
A
= 25
°
C
– Pulsed Drain Current (t
p
≤
10
µ
s)
I
D
I
DM
-130
-520
T
o
tal Power Dissipation @ T
A
= 25
°
C
P
D
380
mW
S
2
G
2
D
1
Operating and Storage
T
e
mperature
Range
T
J
, T
– 55 to
150
°
C
stg
4
5
6
Thermal Resistance – Junction–to–Ambient
R
θ
JA
T
L
328
260
°
C/W
°
C
Maximum Lead
T
e
mperature for Soldering
Purposes, for 10 seconds
ORDERING INFORMATION
Device
Marking
Shipping
LBSS84DW1T1G
S-LBSS84DW1T1G
PD
PD
3000
T
a
pe & Reel
10000
T
a
pe & Reel
LBSS84DW1T1G
S-LBSS84DW1T1G
Jun.,2019
Rev .D
1/5
LESHAN RADIO COMPANY, LTD.
LBSS84DW1T1G , S-LBSS84DW1T1G
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V
-50
–
–
Vdc
(BR)DSS
(V
GS
= 0 Vdc, I
= -250
µ
Adc)
D
Zero Gate Voltage Drain Current
I
µ
Adc
DSS
-0.1
-15
-60
(V
DS
(V
DS
(V
DS
= -25 Vdc, V
= -50 Vdc, V
= -50 Vdc, V
= 0 Vdc)
= 0 Vdc)
= 0 Vdc, T
–
–
–
–
–
–
GS
GS
GS
= 125
°
C)
J
Gate–Body Leakage Current (V
=
20 Vdc, V
DS
= 0 Vdc)
I
–
–
100
nAdc
GS
GSS
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threaded Voltage
V
–
Vdc
-0.8
–
-2.0
10
GS(th)
(V
DS
= V
, I
= -25
0
µ
Adc)
GS
D
Static Drain–to–Source On–Resistance
(V =
-5.0 Vdc, I
= -100 mAdc)
r
5.0
Ohms
DS(on)
GS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
(V
= -5.0 Vdc)
C
–
–
–
42
20
4
–
–
–
pF
ns
DS
DS
DG
iss
Output Capacitance
= -5.0 Vdc)
= -5.0 Vdc)
C
oss
Transfer Capacitance
(V
C
rss
SWITCHING CHARACTERISTICS
(Note 2.)
16.7
8.6
Turn–On Delay Time
t
–
–
–
–
–
–
–
–
–
–
d(on)
Rise Time
t
r
(V
= –15 V, V
= 50
Ω
R
=–10 V
GS
DS
R
Ω
)
,
= 25
L
G
Turn–Off Delay Time
Fall Time
t
17.9
5.3
d(off)
t
f
Gate Charge
Q
6000
pC
T
1. Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%.
2. Switching
characteristics are independent of operating junction temperature.
Jun.,2019
Rev .D
2/5
LESHAN RADIO COMPANY, LTD.
LBSS84DW1T1G , S-LBSS84DW1T1G
Typical Characteristics (T
A
=25
℃
Noted)
Jun.,2019
Rev .D
3/5
LESHAN RADIO COMPANY, LTD.
LBSS84DW1T1G , S-LBSS84DW1T1G
Typical Characteristics (T
=25
℃
Noted)
Jun.,2019
Rev .D
4/5
LESHAN RADIO COMPANY, LTD.
LBSS84DW1T1G , S-LBSS84DW1T1G
SC−88 (SOT−363)
A
NOTES:
1. DIMENSIONING
AND TOLERANCING PER ANSI
Y14.5M, 1982.
G
2. CONTROLLING
DIMENSION: INCH.
3. 419B−01
OBSOLETE, NEW STANDARD 419B−02.
INCHES
DIM MIN
MAX
MILLIMETERS
6
1
5
4
3
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
K
N
S
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
−B−
S
2
0.65 BSC
−−−
0.10
0.10
0.10
0.25
0.30
D
6 PL
M
M
B
0.20 REF
0.2 (0.008)
0.079 0.087
2.00
2.20
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
Jun.,2019
Rev .D
5/5
