LRC-LMBT3906WT1G

LMBT3906WT1G  

S-LMBT3906WT1G  

General Purpose Transistors PNP Silicon  

1. FEATURES  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

SC70(SOT-323)  

2. DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

Shipping  

3 COLLECTOR  

LMBT3906WT1G  

LMBT3906WT3G  

2A  

3000/Tape&Reel  

10000/Tape&Reel  

2A  

1 BASE  

3. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

2 EMITTER  

Symbol  

VCEO  

VCBO  

VEBO  

IC  

Limits  

Unit  

Vdc  

Collector–Emitter Voltage  

Collector–Base Voltage  

-40  

-40  

-5  

Vdc  

Emitter–Base Voltage  

Vdc  

Collector Current — Continuous  

-200  

mAdc  

4. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

Limits  

Unit  

Total Device Dissipation,  

PD  

FR−5 Board (Note 1) @ TA = 25ºC  

Derate above 25ºC  

150  

1.2  

mW  

mW/ºC  

ºC/W  

Thermal Resistance,  

RΘJA  

833  

Junction–to–Ambient(Note 1)  

Junction and

 

Storage temperature  

1. FR–5 = 1.0×0.75×0.062 in.  

TJ,Tstg

−55

∼

+150  

ºC  

Leshan Radio Company, LTD.  

Rev.B Mar

 

2016  

1/5  

LMBT3906WT1G, S-LMBT3906WT1G  

General Purpose Transistors NPN Silicon  

5. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min.  

-40  

-40  

-5  

Typ.  

Max.  

Unit  

V

Collector–Emitter Breakdown Voltage  

(IC = -1.0 mAdc, IB = 0)  

VBR(CEO)  

VBR(CBO)  

VBR(EBO)  

ICEX  

–

–

–

–

–

–

–

V

V

Collector–Base Breakdown Voltage  

(IC = -10 μAdc, IE = 0)  

Emitter–Base Breakdown Voltage  

(IE = -10 μAdc, IC = 0)  

–

nA  

nA  

Collector Cutoff Current  

( VCE = -30 Vdc, VEB = -3.0Vdc)  

Base Cutoff Current  

–

-50  

-50  

IBL  

(VCE = -30 Vdc, VEB = -3.0Vdc)  

ON CHARACTERISTICS (Note 2.)  

DC Current Gain  

–

HFE  

(IC = -0.1 mAdc, VCE = -1.0 Vdc)  

(IC = -1.0 mAdc, VCE = -1.0 Vdc)  

(IC = -10 mAdc, VCE = -1.0 Vdc)  

(IC = -50 mAdc, VCE = -1.0 Vdc)  

(IC = -100 mAdc, VCE = -1.0 Vdc)  

Collector–Emitter Saturation Voltage  

(IC = -10 mAdc, IB = -1.0 mAdc)  

(IC = -50 mAdc, IB = -5.0 mAdc)  

Base–Emitter Saturation Voltage  

(IC = -10 mAdc, IB = -1.0 mAdc)  

(IC = -50 mAdc, IB = -5.0 mAdc)  

SMALL–SIGNAL CHARACTERISTICS  

Current–Gain — Bandwidth Product  

(IC = -10mAdc, VCE= -20Vdc, f = 100MHz)  

Output Capacitance  

60  

80  

–

–

–

–

–

–

–

100  

60  

300  

–

–

30  

VCE(sat)  

VBE(sat)  

V

V

–

–

–

–

-0.25  

-0.4  

-0.65  

–

–

–

-0.85  

-0.95  

MHz  

pF  

fT  

250  

–

–

–

–

Cobo  

Cibo  

(VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz)  

Input Capacitance  

–

–

4.5  

10  

pF  

(VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz)  

SWITCHING CHARACTERISTICS  

ns  

Delay Time  

Rise Time  

Storage Time  

Fall Time  

td  

tr  

–

–

–

–

–

–

–

–

35  

35  

(VCC = -3.0 Vdc,VBE=0.5Vdc,  

IC = -10mAdc, IB1 = -1.0 mAdc)  

ts  

tf  

225  

75  

(VCC = -3.0 Vdc, IC = -10  

mAdc,IB1 = IB2 = -1.0 mAdc)  

2.Pulse Test: Pulse Width

≤

300 μs, Duty Cycle

≤

2.0%.  

Leshan Radio Company, LTD.  

Rev.B Mar

 

2016  

2/5  

LMBT3906WT1G, S-LMBT3906WT1G  

General Purpose Transistors NPN Silicon  

6.

ELECTRICAL CHARACTERISTICS CURVES  

10  

1000  

VCE=10V,f=1KHz  

Cibo  

100  

10  

1

Cobo  

1

0.1  

1

10  

0.1  

1

10  

VR,Reverse Voltage(V)  

IC, Collector Current (mA)  

Current Gain  

Capacitance  

1

0.8  

0.6  

0.4  

0.2  

0

1000  

100  

10  

VCE=1V  

IC=30mA  

150

℃  

25

℃  

IC=100mA  

-55

℃  

IC=10mA  

IC=1mA  

0.001  

0.001  

0.01  

0.1  

1

0.01  

0.1  

1

10  

IB,Base Current(mA)  

IC, Collector Current (A)  

Collector Saturation Region  

DC Current Gain  

Leshan Radio Company, LTD.  

Rev.B Mar

 

2016  

3/5  

LMBT3906WT1G, S-LMBT3906WT1G  

General Purpose Transistors NPN Silicon  

6.

ELECTRICAL CHARACTERISTICS CURVES(Con.)  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.50  

0.45  

0.40  

0.35  

0.30  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

IC/IB=10  

IC/IB=10  

-55

℃  

25

℃  

150

℃  

25

℃  

150

℃  

-55

℃  

0.001  

0.01  

0.1  

1

0.0001  

0.001  

0.01  

0.1  

1

IC, Collector Current (A)  

IC, Collecotr Current (A)  

VBE(sat) vs. IC  

VCE(sat) vs. IC  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

VCE=1V  

-55

℃  

25

℃  

150

℃  

0.0001  

0.001  

0.01  

0.1  

1

IC, Collector Current (A)  

VBE(on) vs. IC  

Leshan Radio Company, LTD.  

Rev.B Mar

 

2016  

4/5  

LMBT3906WT1G, S-LMBT3906WT1G  

General Purpose Transistors NPN Silicon  

7.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM

 

MAX MIN NOM

 

MAX  

0.80 0.90 1.00

 

0.032 0.035 0.039  

DIM  

A

A1 0.00

 

0.05 0.10

 

0.000 0.002 0.004  

A2  

b

0.70REF  

0.028REF  

0.30 0.35 0.40

 

0.012 0.014 0.016  

0.10 0.18 0.25

 

0.004 0.007 0.010  

1.80 2.10 2.20

 

0.071 0.083 0.087  

1.15 1.24 1.35

 

0.045 0.049 0.053  

1.20 1.30 1.40

 

0.047 0.051 0.055  

c

D

E

e

e1  

L

0.65REF  

0.026REF  

0.20 0.38 0.56

 

0.008 0.015 0.022  

2.00 2.10 2.40

 

0.079 0.083 0.095  

H

E  

8.SOLDERING FOOTPRINT  

Leshan Radio Company, LTD.  

Rev.B Mar

 

2016  

5/5