LRC-LMBT4403LT1G
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LESHAN RADIO COMPANY, LTD.
Genera
l
P
urpos
e
T
ransistors
PNP Silicon
LMBT4403LT1G
S-LMBT4403LT1G
•
We declare that the material of product compliance with RoHS requirements.
•
S – Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
ORDERING INFORMATION
Device
Marking
Shipping
1
LMBT4403LT1G
2T
2T
3000/
T
a
pe & Reel
10000/
T
a
pe & Reel
2
S-LMBT4403LT1G
LMBT4403LT3
G
SOT– 23
(TO–236AB)
S-LMBT4403LT3
MAXIMUM RATINGS
Rating
Symbol
Value
– 40
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
I
C
– 40
Vdc
3
COLLECTOR
– 5.0
– 600
Vdc
Collector Current — Continuous
mAdc
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2
EMITTER
T
o
tal Device Dissipation FR –5 Board (1)
T
A
=25 °C
P
D
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance Junction to Ambient
T
o
tal Device Dissipation
R
θ
JA
P
D
556
300
°C/W
mW
Alumina Substrate (2) T
A
= 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage
T
e
mperature
R
θ
JA
T
J
, T
stg
–55 to +150
DEVICE MARKING
LMBT4403LT1G = 2T
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5°
C unless otherwise noted)
Characteristic Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= –1.0 mAdc, I
B
= 0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
Vdc
Vdc
– 40
– 40
– 5.0
—
—
—
Collector–Base Breakdown Voltage
(I
C
= –0.1mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –0.1mAdc, I
C
= 0)
Vdc
—
Base Cutoff Current
µ
Adc
µ
Adc
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
Collector Cutoff Current
– 0.1
– 0.1
I
CEX
(V
CE
= –35 Vdc, V
EB
= –0.4 Vdc)
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse
T
e
st: Pulse Width
<
300
µ
s; Duty Cycle
<
2.0%.
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
––
(I
C
= –0.1 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –150 mAdc, V
CE
= –2.0 Vdc)(3)
(I
C
= –500 mAdc, V
CE
= –2.0 Vdc)(3)
Collector–Emitter Saturation Voltage(3)
(I
C
= –150mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
Base–Emitter Saturation Voltage (3)
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
30
60
––
––
100
100
20
––
300
––
V
CE(sat)
Vdc
Vdc
––
––
– 0.4
– 0.75
V
BE(sat)
– 0.75
––
– 0.95
– 1.3
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –20mAdc, V
CE
= –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
f
T
C
cb
C
eb
h
ie
MHz
pF
200
––
––
8.5
30
(V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
Emitter–Base Capacitance
pF
(V
BE
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
––
k
Ω
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
1.5
0.1
60
15
h
re
h
fe
X 1
0
–4
—
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
8.0
500
100
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
Output Admittance
h
oe
µ
mhos
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
1.0
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= – 30 Vdc, V
EB
= –2.0 Vdc,
I
C
= –150mAdc, I
B1
= –15 mAdc)
(V
CC
= –30 Vdc, I
C
= –150 mAdc,
I
B1
= I
B2
= –15 mAdc)
t
d
t
d
t
s
t
f
—
—
—
—
15
20
ns
ns
225
30
3. Pulse
T
e
st: Pulse Width
<
300
µ
s; Duty Cycle
<
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
– 30 V
– 30 V
200
200
< 20 ns
+ 14V
+2.0V
0
<2.0 ns
1.0 k
1.0 k
0
C
S
* < 10 pF
C
S
*< 10 pF
1N916
–16 V
1.0 to 100
µ
s,
–16 V
1.0 to 100
µ
s,
DUTY CYCLE = 2%
+4.0 V
DUTY CYCLE = 2%
Scope rise time < 4.0ns
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 100°C
30
20
10
7.0
5.0
V
CC
= 30 V
I
C
/ I
B
= 10
C
eb
3.0
2.0
10
7.0
1.0
0.7
0.5
C
cb
5.0
Q
T
0.3
0.2
Q
A
3.0
2.0
0.1
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
10
20
30
50
70
100
200
300
500
I
C
, COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
Figure 4. Charge Data
Figure 3. Capacitance
100
100
I
C
/I
B
= 10
70
50
70
50
V
CC
= 30V
I
C
/ I
B
=10
t
r
@V
CC
=30V
t
r
@V
CC
=10V
30
20
30
20
t
d
@V
BE(off)
= 2.0V
t
d
@V
BE(off)
= 0V
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70 100
200
300
500
10
20
30
50
70 100
200
300
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6.
Rise Time
200
I
C
/I
B
= 20
100
I
C
/I
B
= 10
70
50
t
s
’
= t
s
– 1/8 t
f
I
B1
= I
B2
30
20
10
20
30
50
70 100
200
300
500
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Rev.O 3/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= –10 Vdc, T
A
= 25°C
Bandwidth = 1.0 Hz
10
8
10
f = 1.0 kHz
8
I
I
I
C
= 1.0 mA, R
S
= 430
Ω
C
= 500
µ
A, R
S
= 560
Ω
C
= 50
µ
A, R
S
= 2.7k
Ω
6
6
I
C
= 50
µ
A
100
µ
A
500
µ
A
1.0 mA
4
I
C
= 100
µ
A, R
S
= 1.6 k
Ω
4
2
2
R
S
= OPTIMUM SOURCE RESISTANCE
0
0
0.010.02 0.05
0.1 0.2
0.5 1.0
2.0
5.0 10
20
50 100
50 100
200
500
1k
2k
5k 10k 20k
50k
f , FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (
Ω
)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
(V
CE
= –10 Vdc, f = 1.0 kHz, T
A
= 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
ransistors.
T
o
o
btain these curves,
a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
100
1000
MMBT4403LT1 UNIT 1
50
700
500
MMBT4403LT1 UNIT 2
20
10
5
300
200
2
MMBT4403LT1 UNIT 1
100
70
1
MMBT4403LT1 UNIT 2
0.5
50
0.2
0.1
30
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
7.0 5.0
10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
7.0 5.0
10
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 11. Input Impedance
Figure 10. Current Gain
20
10
500
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
100
50
5.0
2.0
20
1.0
0.5
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
10
5.0
0.2
0.1
2.0
1.0
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
7.0 5.0
10
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
7.0 5.0
10
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
STATIC CHARACTERISTICS
3.0
2.0
V
CE
= 1.0 V
V
CE
= 10
V
T
J
= 125°C
25°C
1.0
–55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
100
20
300
500
I
C
, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
I
C
=1.0 mA
10 mA
100mA
500mA
0.005 0.01
0.02 0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0
7.0
10
VC
for V
CE(sat)
VS
for V
BE
20
30
50
I
B
, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
+ 0.5
0
10
T
J
= 25°C
0.8
0.6
0.4
0.2
0
V
BE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
θ
– 0.5
–1.0
–1.5
–2.0
– 2.5
θ
V
CE(sat)
@ I
C
/I
B
=10
0.1 0.2
0.5 1.0
2.0
5.0 10
20
50
100 200
500
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50
100 200
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
Figure 16. “On” Voltages
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
LMBT4403LT1G;S-LMBT4403LT1G
SOT
–
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 6/6
