LRC-LMBT4403WT1G

Part #LRC-LMBT4403WT1G
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LRC-LMBT4403WT1G
LESHAN RADIO COMPANY, LTD.  
Genera
l
P
urpos
e
T
ransistors  
PNP Silicon  
LMBT4403W
T
1
G  
S-LMBT4403W
T
1
G  
•
•
We declare that the material of product compliance with RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
3
ORDERING INFORMATION  
Marking  
Device  
Shipping  
1
LMBT4403WT1G  
2T  
2T  
3000/
T
a
pe & Reel  
10000/
T
a
pe & Reel  
S-LMBT4403WT1G  
2
LMBT4403WT3G  
S-LMBT4403WT3G  
SC-70  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
– 40  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V

CEO  

V

CBO  

V

EBO  

I

C  

3
– 40  
Vdc  
COLLECTOR  
– 5.0  
– 600  
Vdc  
1
Collector Current — Continuous  
mAdc  
BASE  
2
THERMAL CHARACTERISTICS  
Characteristic  
EMITTER  
Symbol  
Max  
Unit  
T
o
tal Device Dissipation FR−5 Board  
T =
 
25
°
C  
A
P
150  
mW  
°
C/W  
°
C  
D
Thermal Resistance,  
Junction−to−Ambient  
R
q
833  
JA  
Junction and Storage
T
e
mperature  
T , T  
J
−55 to +150  
stg  
DEVICE MARKING  
LMBT4403WT1G = 2T  
ELECTRICAL CHARACTERISTICS
(T

A

= 2
5°
C unless otherwise noted)  
Characteristic Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (3)  
(I

C

= –1.0 mAdc, I

B

= 0)  
V

(BR)CEO  

V

(BR)CBO  

V

(BR)EBO  

I

BEV  

Vdc  
Vdc  
– 40  
– 40  
– 5.0  
—
—
—
Collector–Base Breakdown Voltage  
(I

C

= –0.1mAdc, I

E

= 0)  
Emitter–Base Breakdown Voltage  
(I

E

= –0.1mAdc, I

C

= 0)  
Vdc  
—
Base Cutoff Current  
µ
Adc  
µ
Adc  
(V

CE

= –35 Vdc, V

EB

= –0.4 Vdc)  
Collector Cutoff Current  
– 0.1  
– 0.1  
I

CEX  

(V

CE

= –35 Vdc, V

EB

= –0.4 Vdc)  
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse
T
e
st: Pulse Width  
<
300
µ
s; Duty Cycle
<
2.0%.  
Rev.A 1/6  

LESHAN RADIO COMPANY, LTD.  
;S-LMBT4403W T1G  
LMBT4403WT1G  
ELECTRICAL CHARACTERISTICS
(T

A

= 25°C unless otherwise noted) (Continued)  
Characteristic  
Symbol  
Min  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
h

FE  

––  
(I

C

= –0.1 mAdc, V

CE

= –1.0 Vdc)  
(I

C

= –1.0 mAdc, V

CE

= –1.0 Vdc)  
(I

C

= –10 mAdc, V

CE

= –1.0 Vdc)  
(I

C

= –150 mAdc, V

CE

= –2.0 Vdc)(3)  
(I

C

= –500 mAdc, V

CE

= –2.0 Vdc)(3)  
Collector–Emitter Saturation Voltage(3)  
(I

C

= –150mAdc, I

B

= –15 mAdc)  
(I

C

= –500 mAdc, I

B

= –50 mAdc)  
Base–Emitter Saturation Voltage (3)  
(I

C

= –150 mAdc, I

B

= –15 mAdc)  
(I

C

= –500 mAdc, I

B

= –50 mAdc)  
30  
60  
––  
––  
100  
100  
20  
––  
300  
––  
V

CE(sat)  

Vdc  
Vdc  
––  
––  
– 0.4  
– 0.75  
V

BE(sat)  

– 0.75  
––  
– 0.95  
– 1.3  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
(I

C

= –20mAdc, V

CE

= –10 Vdc, f = 100 MHz)  
Collector–Base Capacitance  
f

T  

C

cb  

C

eb  

h

ie  

MHz  
pF  
200  
––  
––  
8.5  
30  
(V

CB

= –10 Vdc, I

E

= 0, f = 1.0 MHz)  
Emitter–Base Capacitance  
pF  
(V

BE

= –0.5 Vdc, I

C

= 0, f = 1.0 MHz)  
Input Impedance  
––  
k
Ω  
(V

CE

= –10 Vdc, I

C

= –1.0 mAdc, f = 1.0 kHz)  
Voltage Feedback Ratio  
1.5  
0.1  
60  
15  
h

re  

h

fe  

X 1
0

–4  

—
(V

CE

= –10 Vdc, I

C

= –1.0 mAdc, f = 1.0 kHz)  
Small–Signal Current Gain  
8.0  
500  
100  
(V

CE

= –10 Vdc, I

C

= –1.0 mAdc, f = 1.0 kHz)  
Output Admittance  
h

oe  

µ
mhos  
(V

CE

= –10 Vdc, I

C

= –1.0 mAdc, f = 1.0 kHz)  
1.0  
SWITCHING CHARACTERISTICS  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(V

CC

= – 30 Vdc, V

EB

= –2.0 Vdc,  
I

C

= –150mAdc, I

B1

= –15 mAdc)  
(V

CC

= –30 Vdc, I

C

= –150 mAdc,  
I

B1

= I

B2

= –15 mAdc)  
t

d  

t

d  

t

s  

t

f  

—
—
—
—
15  
20  
ns  
ns  
225  
30  
3. Pulse
T
e
st: Pulse Width  
<
300
µ
s; Duty Cycle
<
2.0%.  
SWITCHING TIME EQUIVALENT TEST CIRCUITS  
– 30 V  
– 30 V  
200  
200  
< 20 ns  
+ 14V  
+2.0V  
0
<2.0 ns  
1.0 k  
1.0 k  
0
C

S

* < 10 pF  
C

S

*< 10 pF  
1N916  
–16 V  
1.0 to 100
µ
s,  
–16 V  
1.0 to 100
µ
s,  
DUTY CYCLE = 2%  
+4.0 V  
DUTY CYCLE = 2%  
Scope rise time < 4.0ns  
*
T
o
tal shunt capacitance of test jig connectors, and oscilloscope  
Figure 1. Turn–On Time  
Figure 2. Turn–Off Time  
Rev.A 2/6  

LESHAN RADIO COMPANY, LTD.  
;S-LMBT4403W T1G  
LMBT4403WT1G  
TYPICAL TRANSIENT CHARACTERISTICS  
T

J

= 25°C  
T

J

= 100°C  
30  
20  
10  
7.0  
5.0  
V

CC

= 30 V  
I

C

/ I

B

= 10  
C

eb  

3.0  
2.0  
10  
7.0  
1.0  
0.7  
0.5  
C

cb  

5.0  
Q
T
0.3  
0.2  
Q

A  

3.0  
2.0  
0.1  
0.1  
0.2 0.3
 
0.5 0.7
 
1.0  
2.0 3.0
 
5.0 7.0
 
10  
20 30  
10  
20  
30  
50  
70  
100  
200  
300  
500  
I

C

, COLLECTOR CURRENT (mA)  
REVERSE VOLTAGE (VOLTS)  
Figure 4. Charge Data  
Figure 3. Capacitance  
100  
100  
I

C

/I

B

= 10  
70  
50  
70  
50  
V

CC

= 30V  
I

C

/ I

B

=10  
t

r

@V

CC

=30V  
t

r

@V

CC

=10V  
30  
20  
30  
20  
t

d

@V

BE(off)

= 2.0V  
t

d

@V

BE(off)

= 0V  
10  
10  
7.0  
7.0  
5.0  
5.0  
10  
20  
30  
50  
70 100  
200  
300  
500  
10  
20  
30  
50  
70 100  
200  
300  
500  
I

C

, COLLECTOR CURRENT (mA)  
I

C

, COLLECTOR CURRENT (mA)  
Figure 5. Turn–On Time  
Figure 6.
 
Rise Time  
200  
I

C

/I

B

= 20  
100  
I

C

/I

B

= 10  
70  
50  
t

s

’
= t

s

– 1/8 t

f  

I

B1

= I

B2  

30  
20  
10  
20  
30  
50  
70 100  
200  
300  
500  
I

C

, COLLECTOR CURRENT (mA)  
Figure 7. Storage Time  
Rev.A 3/6  

LESHAN RADIO COMPANY, LTD.  
;S-LMBT4403W T1G  
LMBT4403WT1G  
SMALL–SIGNAL CHARACTERISTICS  
NOISE FIGURE  
V

CE

= –10 Vdc, T

A

= 25°C  
Bandwidth = 1.0 Hz  
10  
8
10  
f = 1.0 kHz  
8
I
I
I

C

= 1.0 mA, R

S

= 430
Ω
 

C

= 500
µ
A, R

S

= 560
Ω  

C

= 50
 
µ
A, R

S

= 2.7k
Ω  
6
6
I

C

= 50
µ
A  
100
µ
A  
500
µ
A  
1.0 mA  
4
I

C

= 100
µ
A, R

S

= 1.6 k
Ω  
4
2
2
R

S

= OPTIMUM SOURCE RESISTANCE  
0
0
0.010.02 0.05
 
0.1 0.2  
0.5 1.0
 
2.0  
5.0 10
 
20  
50 100  
50 100
 
200  
500  
1k  
2k  
5k 10k 20k  
50k  
f , FREQUENCY (kHz)  
R

S

, SOURCE RESISTANCE (
Ω
)  
Figure 8. Frequency Effects  
Figure 9. Source Resistance Effects  
h PARAMETERS  
(V

CE

= –10 Vdc, f = 1.0 kHz, T

A

= 25°C)  
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of
 
ransistors.
T
o
o
btain these curves,  
a high–gain and a low–gain unit were selected from the LMBT4403WT1 lines, and the same units were used to develop the correspondingly  
numbered curves on each graph.  
100  
1000  
LMBT4403WT1 UNIT 1  
50  
700  
500  
LMBT4403WT1 UNIT 2  
20  
10  
5
300  
200  
2
LMBT4403WT1 UNIT 1  
100  
70  
1
LMBT4403WT1 UNIT 2  
0.5  
50  
0.2  
0.1  
30  
0.1  
0.2 0.3  
0.5 0.7
 
1.0  
2.0 3.0  
7.0 5.0
 
10  
0.1  
0.2 0.3  
0.5 0.7
 
1.0  
2.0 3.0  
7.0 5.0
 
10  
I

C

, COLLECTOR CURRENT (mAdc)  
I

C

, COLLECTOR CURRENT (mAdc)  
Figure 11. Input Impedance  
Figure 10. Current Gain  
20  
10  
500  
LMBT4403WT1 UNIT 1  
LMBT4403WT1 UNIT 2  
100  
50  
5.0  
2.0  
20  
1.0  
0.5  
LMBT4403WT1 UNIT 1  
LMBT4403WT1 UNIT 2  
10  
5.0  
0.2  
0.1  
2.0  
1.0  
0.1  
0.2 0.3  
0.5 0.7
 
1.0  
2.0 3.0  
7.0 5.0
 
10  
0.1  
0.2 0.3  
0.5 0.7
 
1.0  
2.0 3.0  
7.0 5.0
 
10  
I

C

, COLLECTOR CURRENT (mAdc)  
I

C

, COLLECTOR CURRENT (mAdc)  
Figure 12. Voltage Feedback Ratio  
Figure 13. Output Admittance  
Rev.A 4/6  

LESHAN RADIO COMPANY, LTD.  
;S-LMBT4403W T1G  
LMBT4403WT1G  
STATIC CHARACTERISTICS  
3.0  
2.0  
V

CE

= 1.0 V  
V

CE

= 10
 
V  
T

J

= 125°C  
25°C  
1.0  
–55°C  
0.7  
0.5  
0.3  
0.2  
0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0 7.0  
10  
20  
30  
50 70  
100  
20  
300  
500  
I

C

, COLLECTOR CURRENT (mA)  
Figure 14. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
0.2  
0
I

C

=1.0 mA  
10 mA  
100mA  
500mA  
0.005 0.01  
0.02 0.03  
0.05  
0.07 0.1  
0.2  
0.3  
0.5  
0.7 1.0  
2.0  
3.0  
5.0  
7.0  
10  

VC

for V

CE(sat)  

VS

for V

BE  

20  
30  
50  
I

B

, BASE CURRENT (mA)  
Figure 15. Collector Saturation Region  
+ 0.5  
0
10  
T

J

= 25°C  
0.8  
0.6  
0.4  
0.2  
0
V

BE(sat)

@ I

C

/I

B

=10  
V

BE

@ V

CE

=1.0 V  
θ
– 0.5  
–1.0  
–1.5  
–2.0  
– 2.5  
θ
V

CE(sat)

@ I

C

/I

B

=10  
0.1 0.2  
0.5 1.0
 
2.0  
5.0 10  
20  
50  
100 200  
500  
0.1 0.2  
0.5 1.0
 
2.0  
5.0  
10  
20  
50  
100 200  
500  
I

C

, COLLECTOR CURRENT (mA)  
I

C

, COLLECTOR CURRENT (mA)  
Figure 17. Temperature Coefficients  
Figure 16. “On” Voltages  
Rev.A 5/6  

LESHAN RADIO COMPANY, LTD.  
;S-LMBT4403W T1G  
LMBT4403WT1G  
SC−70 (SOT−323)  
D
NOTES:  
e1  
1. DIMENSIONING
 
AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING
 
DIMENSION: INCH.  
3
MILLIMETERS  
INCHES  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
E
H
E
DIM  
A
A1  
A2  
b
c
D
E
e
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
MAX  
0.040  
0.004  
1
2
0.7 REF  
0.35  
0.18  
2.10  
1.24  
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
1.30  
0.65 BSC  
0.425 REF  
2.10  
0.026 BSC  
0.017 REF  
0.083  
e1  
L
c
H
2.00  
2.40  
0.079  
0.095  
E
A2  
A
0.05 (0.002)  
L
GENERIC  
A1  
MARKING DIAGRAM  
SOLDERING FOOTPRINT*  
M
XX  
0.65  
0.025  
0.65  
0.025  
1
XX  
M
= Specific Device Code  
= Date Code  
G
= Pb−Free Package  
1.9  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “
G
”,  
may or may not be present.  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
Rev.A 6/6