LRC-LMBT918LT1G

Part #	LRC-LMBT918LT1G
Download	LRC-LMBT918LT1G

LESHAN RADIO COMPANY, LTD.

VHF / UFH Transistor

NPN Silicon

z

compliance with RoHS requirements.

We declare that the material of product

LMBT918LT1G

S-LMBT918LT1G

Ordering Information

Device

Marking

M3B

Shipping

LMBT918LT1G

S-LMBT918LT1G

3000/Tape&Reel

3

LMBT918LT3G

S-LMBT918LT3G

10000/Tape&Reel

M3B

1

2

MAXIMUM RATINGS

Rating

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Symbol

V

CEO

V

CBO

V

EBO

I

C

Value

15

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

30

Vdc

3

COLLECTOR

3.0

50

Vdc

Collector Current — Continuous

mAdc

1

BASE

THERMAL CHARACTERISTICS

Characteristic

2

EMITTER

Symbol

Max

Unit

T

o

tal Device Dissipation FR– 5 Board, (1)

T

A

= 25°C

P

D

225

mW

Derate above 25°C

Thermal Resistance, Junction to Ambient

T

o

tal Device Dissipation

R

θ

JA

P

D

556

°C/W

mW

300

2.4

Alumina Substrate, (2) T

A

= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage

T

e

mperature

R

θ

JA

417

°C/W

°C

T

J

, T

stg

–55 to +150

DEVICE MARKING

LMBT9181LT1G = M3B

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I

C

= 3.0 mAdc, I

B

= 0)

V

(BR)CEO

15

30

—

—

Vdc

Vdc

Collector–Base Breakdown Voltage

(I

C

= 1.0

µ

Adc, I

E

= 0)

V

(BR)CBO

Emitter–Base Breakdown Voltage

(I

E

= 10

µ

Adc, I

C

= 0)

V

(BR)EBO

I

CBO

3.0

—

—

Vdc

Collector Cutoff Current

50

nAdc

( V

CB

= 15 Vdc,

I

E

= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/3

LESHAN RADIO COMPANY, LTD.

LMBT918LT1G , S-LMBT918LT1G

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

h

FE

20

––

—

––

0.4

1.0

––

(I

C

= 3.0 mAdc, V

CE

= 1.0 Vdc)

Collector–Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

Base–Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

V

CE(sat)

V

BE(sat)

Vdc

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

C

= 4.0 mAdc, V

CE

= 10 Vdc, f = 100 MHz)

Output Capacitance

f

T

600

—

MHz

pF

C

obo

(V

CB

= 0 Vdc, I

E

= 0, f = 1.0 MHz)

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

Input Capacitance

—

—

3.0

1.7

C

ibo

NF

—

—

30

11

2.0

6.0

—

pF

dB

(V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz)

Noise Figure

(I

C

= 1.0 mAdc, V

CE

= 6.0 Vdc, R

S

= 50

Ω

, f = 60 MHz) (Figure 1)

Power Output

P

out

G

pe

mW

dB

(I

C

= 8.0 mAdc, V

CB

= 15 Vdc, f = 500 MHz)

Common–Emitter Amplifier Power Gain

(I

C

= 6.0 mAdc, V

CB

= 12 Vdc, f = 200 MHz)

—

V

CC

V

BB

EXTERNAL

100 k

1000 pF BYPASS

0.018

µ

F

RF

VM

C

0.018

µ

F

50

Ω

3

G

0.018

µ

F

0.018

µ

F

NF TEST CONDITIONS

I

C

= 1.0 mA

V

CE

= 6.0 VOLTS

R

S

= 50

Ω

f = 60 MHz

G

pe

TEST CONDITIONS

I

C

= 6.0 mA

V

CE

= 12 VOLTS

f = 200 MHz

Figure 1. NF, G pe Measurement Circuit 20–200

Rev.O 2/3

LESHAN RADIO COMPANY, LTD.

LMBT918LT1G , S-LMBT918LT1G

SOT

–

23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M,1982

A

L

2. CONTROLLING DIMENSION: INCH.

3

INCHES

MAX

MILLIMETERS

DIM

S

B

MIN

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

1

2

A

B

C

D

G

H

J

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

V

G

C

K

L

H

J

D

K

S

V

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

mm

Rev.O 3/3