LRC-LMBTA56LT1G

LESHAN RADIO COMPAN

Y

,

L

TD.  

Driver Transistors  

PNP Silicon  

LMBTA56LT1G  

S-LMBTA56LT1G  

●

FEATURES  

1) We declare that the material of product

 

compliant with  

RoHS requirements and Halogen Free.  

3

2) S- Prefix for Automotive and Other Applications Requiring  

Unique Site and Control Change Requirements; AEC-Q101  

Qualified and PPAP Capable.  

1

2

SOT–23  

●

DEVICE MARKING AND ORDERING INFORMATION  

Device  

Marking  

2GM  

Shipping  

3

COLLECTOR  

LMBTA56LT1G  

LMBTA56LT3G  

3000/Tape&Reel  

10000/Tape&Reel  

2GM  

1

BASE  

2

●

MAXIMUM RATINGS(Ta = 25

℃

)  

EMITTER  

Parameter  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

Limits  

Unit  

Vdc  

Vdc  

Collector–Emitter Voltage  

Collector–Base Voltage  

Emitter–Base Voltage  

Collector Current — Continuous  

-80  

-80  

-4.0  

-500  

Vdc  

mAdc  

●

THERMAL CHARACTERISTICS  

Parameter  

Symbol  

P

D  

Limits  

225  

Unit  

mW  

Total Power Dissipation FR-5  

Board,(Note 1.)@Ta = 25°C  

Derate above 25°C  

1.8  

°C/W  

°C/W  

Thermal Resistance –  

Junction-to-Ambient  

R

θJA  

556  

Total Power Dissipation Alumina  

Substrate,(Note 2.)@Ta = 25°C  

Derate above 25°C  

P

D  

300  

mW  

2.4  

°C/W  

°C/W  

Thermal Resistance,  

Junction-to-Ambient  

R

θJA  

417  

Junction and Storage  

Temperature Range  

T

J

, Tstg  

–55 to +150  

°C  

1. FR–5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

July ,

 

2015  

Rev .A

 

1/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

LMBTA56LT1G,S-LMBTA56LT1G  

●

ELECTRICAL CHARACTERISTICS (Ta= 25

℃

)  

Characteristic  

Collector–Emitter Breakdown Voltage(Note 3.  

(I

C

= – 1 mAdc, I

B

= 0)  

Emitter–Base Breakdown Voltage  

(I

E

= -100 μAdc, I

C

= 0)  

Collector Cutoff Current  

(V

CE

= – 60 Vdc, I

E

= 0)  

Collector Cutoff Current  

(V

CB

= – 80 Vdc, I

E

= 0)  

Symbol  

V

BR(CEO)  

Min.  

-80  

-4  

Typ.  

Max.  

–

Unit  

V

–

–

–

–

V

BR(EBO)  

I

CES  

V

–

μA  

μA  

-0.1  

-0.1  

–

I

CBO  

–

DC Current Gain  

h

FE  

(I

C

= -10 mAdc, V

CE

= -1 Vdc)  

(I

C

= -100 mAdc, V

CE

= -1 Vdc)  

Collector–Emitter Saturation Voltage  

(I

C

= -100mAdc, I

B

= -10 mAdc)  

Base–Emitter On Voltage  

(I

C

= -100mAdc, V

CE

= -1 mAdc)  

Current–Gain — Bandwidth Product(Note 4.)  

(I

C

= -100mAdc, V

CE

= -1Vdc, f = 100MHz)  

3. Pulse Test: Pulse Width

≦

300 μs, Duty Cycle

≦

2.0%.  

100  

100  

–

–

–

–

V

CE(sat)  

V

BE(on)  

f

T  

V

V

–

–

–

–

–

-0.25  

-1.20  

–

MHz  

50  

4. f

T

is defined as the frequency at which |hf

e

| extrapolates to unity.  

TURN−ON TIME  

V

TURN−OFF TIME  

V

CC  

+V  

CC  

−1.0 V  

BB  

+40 V  

+40 V  

5.0

m

s  

100  

R

100  

R

L

L

OUTPUT  

OUTPUT  

+10 V  

0

V

in  

R

B

V

in  

R

B

t =

 

3.0 ns  

r

* C

 

t

6.0 pF  

S

* C

 

t

6.0 pF  

S

5.0

m

F  

5.0

m

F  

100  

100  

5.0

m

s  

t =

 

3.0 ns  

r

*

T

o

tal Shunt Capacitance of

T

e

st Jig and Connectors For PNP

T

e

st Circuits, Reverse All Voltage Polarities  

Fig. 1

 

Switching Time Test Circuits  

July ,

 

2015  

Rev .A

 

2/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

LMBTA56LT1G,S-LMBTA56LT1G  

ELRCTRICAL CHARACTERISTICS CURVES  

1000  

100  

10  

100  

90  

80  

70  

60  

50  

40  

30  

20  

10  

0

VCE=-1V  

f=1MHz  

0.0005  

0.005  

0.05  

0.5  

0.1  

1

10  

100  

IC (A)  

25

℃

 

VR (V)  

-55

℃  

125

℃  

Cibo  

Cobo  

FIG. 2 Capacitance  

FIG.3 DC Current Gain  

1

1.2  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

IC/IB=10  

IC/IB=10  

0.1  

0.01  

0.0001  

0.001  

0.01  

IC (A)  

0.1  

1

0.001  

0.01  

0.1  

1

IC (A)  

25

℃

 

-55

℃  

25

℃  

150

℃  

-55

℃  

150

℃  

FIG.4 Collector Emitter Saturation Voltage vs. Collector Current  

FIG.5 Base

 

Emitter Saturation Voltage vs. Collector Current  

July ,

 

2015  

Rev .A

 

3/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

LMBTA56LT1G,S-LMBTA56LT1G  

ELRCTRICAL CHARACTERISTICS CURVES  

1.2  

1.1  

1.0  

0.9  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

VCE=1V  

0.0001  

0.001  

0.01  

0.1  

1

5.0E-05  

5.0E-04  

5.0E-03  

5.0E-02  

IC (A)  

IB (A)  

IC=10mA  

IC=250mA  

IC=50mA  

IC=100mA  

-55

℃  

25

℃  

150

℃  

IC=500mA  

FIG.6 Collector Saturation Region  

FIG.7 Base Emitter Voltage vs. Collector Current  

July ,

 

2015  

Rev .A

 

4/5  

LESHAN RADIO COMPAN

Y

,

L

TD.  

LMBTA56LT1G,S-LMBTA56LT1G  

SOT-23  

NOTES:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M,1982  

A

L

2. CONTROLLING DIMENSION: INCH.  

3

INCHES  

MAX  

MILLIMETERS  

DIM  

S

B

MIN  

MIN  

2.80  

1.20  

0.89  

0.37  

1.78  

0.013  

0.085  

0.35  

0.89  

2.10  

0.45  

MAX  

3.04  

1.40  

1.11  

0.50  

2.04  

0.100  

0.177  

0.69  

1.02  

2.64  

0.60  

1

2

A

B

C

D

G

H

J

0.1102  

0.0472  

0.0350  

0.0150  

0.0701  

0.0005  

0.0034  

0.0140  

0.0350  

0.0830  

0.0177  

0.1197  

0.0551  

0.0440  

0.0200  

0.0807  

0.0040  

0.0070  

0.0285  

0.0401  

0.1039  

0.0236  

V

G

C

K

L

H

J

D

K

S

V

0.037  

0.95  

0.037  

0.95  

0.079  

2.0  

0.035  

0.9  

0.031  

0.8  

inches  

mm  

July ,

 

2015  

Rev .A

 

5/5