LRC-LMBTA64LT1G
| Part # | LRC-LMBTA64LT1G |
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LESHAN RADIO COMPANY, LTD.
Darlingto
n
T
ransistors
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
LMBTA63LT1G
LMBTA64LT1G
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
–30
Unit
Vdc
3
V
CES
CBO
EBO
1
V
V
–30
Vdc
2
–10
Vdc
Collector Current – Continuous
I
C
–500
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
LMBTA63LT1G = 2U; LMBTA64LT1G = 2V
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR 3
Symbol
Max
Unit
(1)
T
o
tal Device Dissipation FR–5 Board,
P
225
mW
D
BASE
1
T
= 25
°
C
A
Derate above 25
°
C
1.8
556
300
mW/
°
C
°
C/W
mW
Thermal Resistance, Junction to Ambient
T
o
tal Device Dissipation
R
q
JA
EMITTER 2
P
D
(2)
Alumina Substrate,
T
A
= 25
°
C
Derate above 25
°
C
2.4
417
mW/
°
C
°
C/W
°
C
Thermal Resistance, Junction to Ambient
Junction and Storage
T
e
mperature
R
q
JA
T ,
T
J stg
–55 to +150
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
= –100
µ
Adc)
V
–30
–
–
Vdc
nAdc
nAdc
C
(BR)CEO
Collector Cutoff Current (V
= –30 Vdc)
= –10 Vdc)
I
–100
–100
CB
CBO
Emitter Cutoff Current (V
I
–
EB
EBO
ON CHARACTERISTICS
(3)
DC Current Gain
(I =
–10 mAdc, V
h
FE
–
= –5.0 Vdc)
= –5.0 Vdc)
LMBTA63LT1G
5,000
10,000
10,000
20,000
–
–
–
–
C
CE
CE
(I =
–10 mAdc, V
(I =
–100 mAdc, V
(I =
–100 mAdc, V
LMBTA64LT1G
LMBTA63LT1G
LMBTA64LT1G
C
C
C
= –5.0 Vdc)
= –5.0 Vdc)
CE
CE
Collector–Emitter Saturation Voltage (I
= –100 mAdc, I
= –0.1 mAdc)
V
CE(sat)
–
–
–1.5
–2.0
Vdc
Vdc
C
B
Base–Emitter On Voltage (I
= –100 mAdc, V
C
= –5.0 Vdc)
V
BE(on)
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (I
= –10 mAdc, V
C
= –5.0 Vdc, f = 100 MHz)
f
T
125
–
MHz
CE
1. FR–5
= 1.0 x 0.75 x 0.062 in.
2. Alumina
= 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%.
1/3
LESHAN RADIO COMPANY, LTD.
LMBTA63LT1G LMBTA64LT1G
200
100
T
A
= 125
°
C
25
°
C
70
50
-10 V
30
20
V
CE
= -2.0 V
-5.0 V
10
7.0
5.0
-55
°
C
3.0
2.0
-0.3
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
-200
-300
I ,
COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
-2.0
-1.6
-1.2
-0.8
-0.4
0
-2.0
-1.8
T
= 25
°
C
A
T
= 25
°
C
A
V
@ I
/I =
100
C B
BE(sat)
-1.6
-1.4
-1.2
-1.0
I
C
=
-10 mA
-50 mA
-100 mA
-175 mA
-300 mA
V
@ V
= -5.0 V
CE
BE(on)
V
@ I
/I =
1000
CE(sat)
C B
I /I
= 100
C B
-0.8
-0.6
-0.3 -0.5
-1.0 -2
-3 -5
-10 -20
-30 -50
-100 -200
-300
-0.
1
–
0.2 -0.5 -1
-2 -5
-10 -20
-50 -100-20
0
–
500 -1K-2K
-5K-10K
I ,
COLLECTOR CURRENT (mA)
C
I ,
BASE CURRENT (
µ
A)
B
Figure 3. “On” Voltage
Figure 2. Collector Saturation Region
10
V
= -5.0 V
CE
f = 100 MHz
= 25
°
C
4.0
3.0
T
A
2.0
1.0
0.4
0.2
0.1
-1.0 -2.0
-5.0 -10
-20
-50 -100
-200
-500 -1K
I ,
COLLECTOR CURRENT (mA)
C
Figure 4. High Frequency Current Gain
2/3
LESHAN RADIO COMPANY, LTD.
LMBTA63LT1G LMBTA64LT1G
SOT
–
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
