LRC-LMUN2214LT1G

LMUN2214LT1G  

S-LMUN2214LT1G  

Bias Resistor Transistor  

NPN Silicon Surface Mount Transistor  

with Monolithic Bias Resistor Network  

SOT23(TO-236)  

1. FEATURES  

●

Simplifies circuit design  

3 COLLECTOR  

●

Reduces board space and component count  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

R1  

1 BASE  

R2  

2 EMITTER  

2. DEVICE MARKING AND RESISTOR VALUES  

Device  

Marking R1(K)

 

R2(K) Vin(V)  

Shipping  

LMUN2214LT1G  

A8D  

10  

47  

-6

+

~40  

3000/Tape&Reel  

3. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VCEO  

VCBO  

IC  

Limits  

50  

Unit  

V

Collector–Emitter Voltage  

Collector–Base Voltage  

50  

V

Collector Current — Continuous  

100  

mA  

4. THERMAL CHARACTERISTICS  

Parameter  

Symbol  

Limits  

Unit  

Total Device Dissipation,  

FR−5 Board (Note 1) @ TA = 25ºC  

Derate above 25ºC  

PD  

mW  

mW/ºC  

ºC/W  

246  

1.5  

Thermal Resistance,  

RΘJA  

508  

Junction–to–Ambient(Note 1)  

Junction and

 

Storage temperature  

1. FR–5 @ Minimum Pad.  

ºC  

TJ,Tstg

−55

∼

+150  

Leshan Radio Company, LTD.  

Rev.B Nov.

 

2018  

1/5  

LMUN2214LT1G, S-LMUN2214LT1G  

Bias Resistor Transistor  

5. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min.  

Typ.  

Max.  

–

Unit  

V

Collector–Emitter Breakdown Voltage  

(IC = 2.0 mA, IB = 0)  

VBR(CEO)  

VBR(CBO)  

ICBO  

50  

50  

–

–

–

–

–

–

V

Collector–Base Breakdown Voltage  

(IC = 10 μA, IE = 0)  

–

nA  

nA  

mA  

Collector-Base Cutoff Current  

(VCB = 50 V, IE = 0)  

100  

500  

0.2  

Collector-Emitter Cutoff Current  

(VCE = 50 V, IB = 0)  

ICEO  

–

Emitter-Base Cutoff Current  

(VEB = 6.0 V, IC = 0)  

IEBO  

–

ON CHARACTERISTICS (Note 2.)  

DC Current Gain  

HFE  

VCE(sat)  

VOL  

(IC = 5.0 mA, VCE = 10 V)  

Collector–Emitter Saturation Voltage  

(IC = 10 mA, IB = 0.3 mA)  

Output Voltage (on)  

80  

–

140  

–

V

V

–

–

0.25  

0.2  

(VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ)  

Output Voltage (on)  

–

VOH  

V

(VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ)  

Input Resistor  

4.9  

7

–

–

–

–

R1  

13  

KΩ  

Resistor Ratio  

R1/R2  

0.17  

0.25  

2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%  

Leshan Radio Company, LTD.  

Rev.B Nov.

 

2018  

2/5  

LMUN2214LT1G, S-LMUN2214LT1G  

Bias Resistor Transistor  

6.ELECTRICAL CHARACTERISTICS CURVES  

500  

1

VCE=10V  

IC/IB=10  

450  

400  

350  

300  

250  

200  

150  

100  

50  

150  

℃

85

℃

 

25

℃  

85

℃  

25

℃  

0.1  

150

℃  

–

55

℃  

-55

℃  

0

0.01  

0.001  

0.01  

0.1  

0

0.02  

0.04  

0.06  

IC,Collector Current(A)  

IC,Collector Current(A)  

VCESAT vs. IC  

HFE vs. IC  

10  

1

0.1  

0.01  

℃

150  

25

℃  

1

85

℃  

–

55

℃  

25

℃  

-55

℃

 

0.001  

0.0001  

℃

Vo=5V  

6

150  

85

℃  

Vo=0.2V  

0.1  

0

2

4

0

0.02  

0.04  

0.06  

VBE,Base to Emittor Voltage(V)  

IC,Collector Current(A)  

VBE vs. IC  

VBE vs. IC  

Leshan Radio Company, LTD.  

Rev.B Nov.

 

2018  

3/5  

LMUN2214LT1G, S-LMUN2214LT1G  

Bias Resistor Transistor  

6.ELECTRICAL CHARACTERISTICS CURVES(Con.)  

4

3.5  

3

f=1MHz  

Ta=25

℃  

2.5  

2

1.5  

1

0

10  

20  

30  

VR,Reverse Voltage(V)  

CT vs. VR  

Leshan Radio Company, LTD.  

Rev.B Nov.

 

2018  

4/5  

LMUN2214LT1G, S-LMUN2214LT1G  

Bias Resistor Transistor  

7.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM MAX

 

MIN NOM MAX  

DIM  

A

0.89  

1

1.11 0.035 0.04 0.044  

0.1 0.001

 

0.002 0.004  

0.5 0.015

 

0.018 0.02  

A1 0.01  

0.06  

0.44  

b

c

0.37  

0.09  

2.80  

1.20  

1.78  

0.10  

0.13 0.18

 

0.003 0.005 0.007  

D

E

e

L

2.9  

1.3  

1.9  

0.2  

3.04 0.11

 

0.114 0.12  

1.4 0.047

 

0.051 0.055  

2.04 0.07

 

0.075 0.081  

0.3 0.004

 

0.008 0.012  

L1 0.35  

0.54 0.69

 

0.014 0.021 0.029  

H

E  

2.10  

0°  

2.4  

—  

2.64 0.083

 

0.094 0.104  

10° 0°

 

— 10°  

θ

8.SOLDERING FOOTPRINT  

Leshan Radio Company, LTD.  

Rev.B Nov.

 

2018  

5/5