LRC-LMUN2231LT1G
| Part # | LRC-LMUN2231LT1G |
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LMUN2231LT1G
S-LMUN2231LT1G
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
SOT23(TO-236)
1. FEATURES
3 COLLECTOR
●
Simplifies circuit design
R1
●
Reduces board space and component count
●
We declare that the material of product
compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
1 BASE
R2
2 EMITTER
2. DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1(K)
R2(K)
Vin(V)
Shipping
LMUN2231LT1G
LMUN2231LT3G
A8H
A8H
2.2
2.2
2.2
-10
~
+12
3000/Tape&Reel
10000/Tape&Reel
-10
+
~12
2.2
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VCEO
VCBO
IC
Limits
50
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
50
V
Collector Current — Continuous
100
mA
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
PD
mW
mW/ºC
ºC/W
246
1.5
Thermal Resistance,
RΘJA
508
Junction–to–Ambient(Note 1)
Junction and
Storage temperature
1. FR–5 @ Minimum Pad.
ºC
TJ,Tstg
−55
∼
+150
Leshan Radio Company, LTD.
Rev.C Sep.
2018
1/5
LMUN2231LT1G, S-LMUN2231LT1G
Bias Resistor Transistor
5. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
–
Unit
V
Collector–Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0)
VBR(CEO)
VBR(CBO)
ICBO
50
50
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(IC = 10 μA, IE = 0)
–
nA
nA
mA
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
100
500
2.3
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
–
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
–
ON CHARACTERISTICS (Note 2.)
DC Current Gain
HFE
VCE(sat)
VOL
(IC = 5.0 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 5 mA)
Output Voltage (on)
8
–
–
–
–
–
V
V
0.25
0.2
(VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ)
Output Voltage (on)
–
VOH
V
(VCC = 5.0 V, VB = 0.25 V, RL =1.0KΩ)
Input Resistor
4.9
1.5
0.8
–
–
–
–
R1
2.9
1.2
KΩ
Resistor Ratio
R1/R2
2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
Leshan Radio Company, LTD.
Rev.C Sep.
2018
2/5
LMUN2231LT1G, S-LMUN2231LT1G
Bias Resistor Transistor
6.ELECTRICAL CHARACTERISTICS CURVES
1
160
25
℃
85
℃
IC/IB=10
VCE=10V
140
120
100
80
℃
85
150
℃
0.1
150
℃
-55
℃
60
-55
℃
40
℃
25
20
0
0.01
0.0001
0.001
0.01
0.1
0
0.02
0.04
0.06
0.08
0.1
IC(A)
IC(A)
VCESAT vs. IC
HFE vs. IC
0.1
10
150
℃
25
℃
85
℃
0.01
0.001
25
℃
–
55
℃
-55
℃
1
150
℃
85
℃
Vo=5V
Vo=0.2V
0.1
0.0001
0
0.02
0.04
0.06
0.08
0
0.5
1
1.5
VBE,Base to Emittor(V)
IC,Collector Current(A)
VBE vs. IC
VBE vs. IC
Leshan Radio Company, LTD.
Rev.C Sep.
2018
3/5
LMUN2231LT1G, S-LMUN2231LT1G
Bias Resistor Transistor
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
4
3.5
3
f=1MHz
Ta=25
℃
2.5
2
1.5
1
0.5
0
0
10
20
30
40
50
VR,Reverse Voltage(V)
CT vs. VR
Leshan Radio Company, LTD.
Rev.C Sep.
2018
4/5
LMUN2231LT1G, S-LMUN2231LT1G
Bias Resistor Transistor
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM
MAX MIN NOM
MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001
0.002 0.004
0.5 0.015
0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18
0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11
0.114 0.12
1.4 0.047
0.051 0.055
2.04 0.07
0.075 0.081
0.3 0.004
0.008 0.012
L1 0.35
0.54 0.69
0.014 0.021 0.029
CT vs. VR
H
E
2.10
0°
2.4
—
2.64 0.083
0.094 0.104
10° 0°
— 10°
θ
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.C Sep.
2018
5/5
