LRC-LMUN5213DW1T1G

LMUN5213DW1T1G  

S-LMUN5213DW1T1G  

Dual Bias ResistorTransistors  

NPN Silicon Surface Mount Transistors  

with Monolithic Bias Resistor Network  

SC88(SOT-363)  

1. FEATURES  

●

Simplifies circuit design  

●

Reduces board space.  

●

Reduces Component Count  

●

We declare that the material of product

 

compliance with  

RoHS requirements and Halogen Free.  

●

S- prefix for automotive and other applications requiring  

unique site and control change requirements; AEC-Q101  

qualified and PPAP capable.  

2. DEVICE MARKING AND RESISTOR VALUES  

Device  

Marking R1(K)

 

R2(K)  

Shipping  

LMUN5213DW1T1G  

LMUN5213DW1T3G  

7C  

7C  

47  

47  

47  

47  

3000/Tape&Reel  

10000/Tape&Reel  

3. MAXIMUM RATINGS(Ta = 25ºC)  

Parameter  

Symbol  

VCEO  

VCBO  

VEBO  

IC  

Limits  

50  

Unit  

V

Collector–Emitter Voltage  

Collector–Base Voltage  

50  

V

6

V

Emitter–Base Breakdown Voltage  

Collector Current — Continuous  

mA  

100  

4. THERMAL CHARACTERISTICS  

Parameter (One Junction Heated)  

Total Device Dissipation,  

Symbol  

Limits  

Unit  

PD  

187  

1.5  

mW  

mW/ºC  

ºC/W  

(Note 1) @ TA = 25ºC  

Derate above 25ºC  

Thermal Resistance,  

RΘJA  

670  

Junction–to–Ambient(Note 1)  

Limits  

Unit  

Parameter (Both Junctions Heated)

 

Symbol  

Total Device Dissipation,  

(Note 1) @ TA = 25ºC  

PD  

250  

2

mW  

mW/ºC  

ºC/W  

Derate above 25ºC  

Thermal Resistance,  

RΘJA  

RΘJL  

493  

Junction–to–Ambient(Note 1)  

Thermal Resistance,  

188  

ºC/W  

Junction–to–Lead(Note 1)  

Junction and

 

Storage temperature  

1. FR–4 @ Minimum Pad  

TJ,Tstg  

∼

º

C

−55

+150  

Rev.B Mar.

 

2021  

Leshan Radio Company, LTD.  

1/5  

LMUN5213DW1T1G, S-LMUN5213DW1T1G  

Bias Resistor Transistor  

5. ELECTRICAL CHARACTERISTICS (Ta= 25

ºC

)  

OFF CHARACTERISTICS  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Characteristic  

Collector–Emitter Breakdown Voltage  

(IC = 2.0 mA, IB = 0)  

VBR(CEO)  

V

50  

–

–

Collector–Base Breakdown Voltage  

(IC = 10 μA, IE = 0)  

VBR(CBO)  

V

50  

–

–

Emitter–Base Breakdown Voltage  

(IE = 200 μA, IC = 0)  

VBR(EBO)  

ICBO  

V

6

–

–

–

–

–

–

Collector-Base Cutoff Current  

(VCB = 50 V, IE = 0)  

nA  

nA  

mA  

100  

500  

0.1  

Collector-Emitter Cutoff Current  

(VCE = 50 V, IB = 0)  

ICEO  

–

Emitter-Base Cutoff Current  

(VEB = 6.0 V, IC = 0)  

IEBO  

–

ON CHARACTERISTICS (Note 2)  

DC Current Gain  

HFE  

VCE(sat)  

VOL  

80  

–

140  

–

0.25  

0.2  

–

(IC = 5.0 mA, VCE = 10 V)  

Collector–Emitter Saturation Voltage  

(IC = 10 mA, IB = 0.3 mA)  

Output Voltage (on)  

–

–

–

V

V

–

(VCC = 5.0 V, VB = 3.5 V, RL =1.0KΩ)  

Output Voltage (on)  

VOH  

4.9  

V

(VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ)  

Input Resistor  

R1  

32.9  

0.8  

47  

1

61.1  

1.2  

KΩ  

Resistor Ratio  

R1/R2  

2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%  

Rev.B Mar.

 

2021  

Leshan Radio Company, LTD.  

2/5  

LMUN5213DW1T1G, S-LMUN5213DW1T1G  

Bias Resistor Transistor  

6.ELECTRICAL CHARACTERISTICS CURVES  

1000  

100  

10  

1

VCE=10V  

IC/IB=10  

85

℃

 

150

℃  

85

℃  

25

℃  

-55

℃  

25

℃  

0.1  

150

℃  

-55

℃  

0.01  

0.001  

0.01  

0.1  

0

0.01  

0.02  

0.03  

IC Collector Current(A)  

IC Collector Current(A)  

HFE vs. IC  

VCE(sat) vs. IC  

1E-01  

1E-02  

1E-03  

1E-04  

1E-05  

1E-06  

100  

10  

1

V

O

=0.2V  

-55

℃  

150

℃  

-55

℃  

150

℃  

25

℃  

85

℃  

25

℃  

85

℃  

V

O

=5V  

0.1  

0

0.01  

0.02  

0.03  

0.04  

0.05  

0

1

2

3

4

5

IC Collector Current(A)  

Vin Input Voltage(V)  

Vin vs. IC  

IC vs. Vin  

Rev.B Mar.

 

2021  

Leshan Radio Company, LTD.  

3/5  

LMUN5213DW1T1G, S-LMUN5213DW1T1G  

Bias Resistor Transistor  

6.ELECTRICAL CHARACTERISTICS CURVES(Con.)  

3

3

2

2

1

f=1.0MHz  

Ta=25

℃  

0

10  

20  

30  

40  

50  

VT Reverse Voltage(V)  

Capacitance  

Rev.B Mar.

 

2021  

Leshan Radio Company, LTD.  

4/5  

LMUN5213DW1T1G, S-LMUN5213DW1T1G  

Bias Resistor Transistor  

7.OUTLINE AND DIMENSIONS  

Notes:  

1. DIMENSIONING AND TOLERANCING PER ANSI  

Y14.5M, 1982.  

2. CONTROLLING DIMENSION: MILLIMETERS.  

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  

THICKNESS OF BASE MATERIAL.  

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD  

FLASH, PROTRUSIONS OR GATE BURRS.  

MILLIMETERS  

INCHES  

MIN NOM MAX

 

MIN NOM MAX  

DIM  

A

—  

—  

—  

1.10  

0.10  

—  

0

— 0.043  

— 0.004  

A1 0.00  

A2 0.70

 

0.90 1.00 0.027

 

0.035 0.039  

b

C

D

E

0.15 0.20 0.25 0.006

 

0.008 0.01  

0.08 0.15 0.22 0.003

 

0.006 0.009  

1.80 2.00 2.20  

0.07 0.078

 

0.086  

2.00 2.10 2.20 0.078

 

0.082 0.086  

E1 1.15

 

1.25 1.35 0.045

 

0.049 0.053  

e

0.65 BSC  

0.026 BSC  

L

0.26 0.36 0.46

 

0.010 0.014 0.018  

L2  

0.15 BSC  

0.15  

0.30  

0.10  

0.10  

0.006 BSC  

0.01  

aaa  

bbb  

ccc  

ddd  

0.01  

0.00  

0.00  

8.SOLDERING FOOTPRINT  

Leshan Radio Company, LTD.  

Rev.B Mar.

 

2021  

5/5  

DISCLAIMER  

●

Before you use our Products, you are requested to carefully read this document and fully understand its  

contents. LRC

 

shall not

 

be in any way responsible or

 

liable for failure,

 

malfunction or accident arising  

from the use of any LRC’s Products against warning, caution or note contained in this document.  

All information contained in this document is current as of the issuing date and subject to change without  

any prior notice. Before purchasing or using LRC’s Products,please confirm the latest information with a  

LRC sales representative.  

●