LRC-LMUN5316DW1T1G
| Part # | LRC-LMUN5316DW1T1G |
Download  | LRC-LMUN5316DW1T1G |
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
LMUN5311DW1T1G
Series
6
5
4
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1G series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
1
2
3
SOT-363/SC-88
• Reduces Board Space
• Reduces Component Count
• We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
6
5
4
and Q
2
, – minus sign for Q
1
(PNP) omitted)
R
1
R
2
Rating
Symbol Value
Unit
Vdc
Q
2
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
CBO
V
CEO
I
C
50
50
R
2
Q
1
Vdc
R
1
100
mAdc
1
2
3
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
(One Junction Heated)
T
o
tal Device Dissipation
T
A
= 25°C
Symbol
Max
Unit
6
5
4
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
670 (Note 1.)
490 (Note 2.)
mW
XX
Derate above 25°C
mW/°C
°C/W
1
2
3
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
xx = Device Marking
=
(See Page 2)
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
T
o
tal Device Dissipation
T
A
= 25°C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
mW
Derate above 25°C
mW/°C
°C/W
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
R
θ
JA
R
θ
JL
°C/W
Junction and Storage
T
e
mperature
T
J
, T
stg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
1/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
Package
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
SOT-363
Marking
11
R1(K)
10
R2(K)
10
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Ta
p
1
e
&Reel
3000/Tape&Reel
2.2 10000/Tape&Re
e
2
l
.2
3000/Tape&Reel
100
0
4
0
.
/
7
Tape&Reel
3000/Tape&Reel
10000/Tape
4
&
.
R
7
eel
3000/Tape&Reel
10000/T
2
a
2
pe&Reel
3000/Tape&Reel
10000
2
/
T
.
2
ape&Reel
LMUN5311DW1T1G
LMUN5311DW1T3G
LMUN5312DW1T1G
LMUN5312DW1T3G
LMUN5313DW1T1G
LMUN5313DW1T3G
LMUN5314DW1T1G
LMUN5314DW1T3G
LMUN5315DW1T1G
LMUN5315DW1T3G
LMUN5316DW1T1G
LMUN5316DW1T3G
LMUN5330DW1T1G
LMUN5330DW1T3G
LMUN5331DW1T1G
LMUN5331DW1T3G
LMUN5332DW1T1G
LMUN5332DW1T3G
LMUN5333DW1T1G
LMUN5333DW1T3G
LMUN5334DW1T1G
LMUN5334DW1T3G
LMUN5335DW1T1G
LMUN5335DW1T3G
10
10
11
12
22
22
47
22
12
22
13
47
13
47
47
47
47
10
14
14
10
10
15
Ğ
Ğ
Ğ
15
16
16
30
30
31
31
32
32
33
33
34
34
35
35
10
4.7
1
4.7
Ğ
1
1
2.2
4.7
4.7
22
2.2
4.7
47
47
47
4.7
47
47
2.2
47
2/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted, common for Q
and Q
, − minus sign for Q
(PNP) omitted) (Continued)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4)
DC Current Gain
LMUN5311DW1T1G
LMUN5312DW1T1G
LMUN5313DW1T1G
LMUN5314DW1T1G
LMUN5315DW1T1G
LMUN5316DW1T1G
LMUN5330DW1T1G
LMUN5331DW1T1G
LMUN5332DW1T1G
LMUN5333DW1T1G
LMUN5334DW1T1G
LMUN5335DW1T1G
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
(V =
10
V
, I
=
5
.0 mA)
100
140
140
350
350
5.0
15
CE
C
80
160
160
3.0
8.0
15
80
80
80
30
200
150
140
Collector-Emitter Saturation Voltage
(I =
10 mA, I
= 0.3 mA)
V
−
−
0.25
Vdc
Vdc
CE(sat)
C
B
(I =
10 mA, I
= 5 mA)
LMUN5330DW1T1G/LMUN5331DW1T1G
C
B
(I =
10 mA, I
= 1 mA)
LMUN5315DW1T1G/LMUN5316DW1T1G
C
B
LMUN5332DW1T1G/LMUN5333DW1T1G/LMUN5334DW1T1G
Output Voltage (on)
(V =
5.0
V
, V
=
2
.5
V
, R
=
1
.0 k
W
)
V
OL
LMUN5311DW1T1G
LMUN5312DW1T1G
LMUN5314DW1T1G
LMUN5315DW1T1G
LMUN5316DW1T1G
LMUN5330DW1T1G
LMUN5331DW1T1G
LMUN5332DW1T1G
LMUN5333DW1T1G
LMUN5334DW1T1G
LMUN5335DW1T1G
LMUN5313DW1T1G
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V =
5.0
V
, V
=
3
.5
V
, R
=
1
.0 k
W
)
CC
B
L
Output Voltage (off)
(V =
5.0
V
, V
=
0
.5
V
, R
=
1
.0 k
W
)
V
4.9
−
−
Vdc
OH
CC
B
L
(V =
5.0
V
, V
=
0
.050
V
, R
=
1
.0 k
W
) LMUN5330DW1T1G
CC
B
L
(V =
5.0
V
, V
=
0
.25
V
, R
=
1
.0 k
W
)
LMUN5315DW1T1G
LMUN5316DW1T1G
LMUN5333DW1T1G
CC
B
L
Input Resistor
LMUN5311DW1T1G
LMUN5312DW1T1G
LMUN5313DW1T1G
LMUN5314DW1T1G
LMUN5315DW1T1G
LMUN5316DW1T1G
LMUN5330DW1T1G
LMUN5331DW1T1G
LMUN5332DW1T1G
LMUN5333DW1T1G
LMUN5334DW1T1G
LMUN5335DW1T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k
W
15.4
1.54
28.6
2.86
2.2
Resistor RatioLMUN5311DW1T1G/LMUN5312DW1T1G/LMUN5313DW1T1G
LMUN5314DW1T1G
R1/R2
0.8
0.17
−
1.0
0.21
−
1.0
0.1
1.2
0.25
−
LMUN5315DW1T1G/LMUN5316DW1T1G
LMUN5330DW1T1G/LMUN5331DW1T1G/LMUN5332DW1T1G
LMUN5333DW1T1G
LMUN5334DW1T1G
LMUN5335DW1T1G
0.8
1.2
0.055
0.38
0.038
0.185
0.56
0.056
0.47
0.047
4. Pulse
T
e
st: Pulse Width < 300
m
s, Duty Cycle <
2.0%
3/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted, common for Q
and Q
, − minus sign for Q
(PNP) omitted)
A
1
2
1
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50
V
, I
=
0
)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V
= 50
V
, I
=
0
)
CE
B
CEO
Emitter-Base Cutoff Current
(V =
6.0
V
, I
=
0
)
LMUN5311DW1T1G
LMUN5312DW1T1G
LMUN5313DW1T1G
LMUN5314DW1T1G
LMUN5315DW1T1G
LMUN5316DW1T1G
LMUN5330DW1T1G
LMUN5331DW1T1G
LMUN5332DW1T1G
LMUN5333DW1T1G
LMUN5334DW1T1G
LMUN5335DW1T1G
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
EBO
EB
C
Collector-Base Breakdown Voltage (I
= 10
m
A, I
= 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 3) (I
= 2.0 mA, I
= 0)
C
B
3. Pulse
T
e
st: Pulse Width < 300
m
s, Duty Cycle <
2.0%
ALL LMUN5311DW1T1G
SERIES DEVICES
300
250
200
150
100
R
= 490
°
C/W
50
0
q
JA
−
5
0
0
50
100
150
T ,
AMBIENT TEMPERATURE (
°
C)
A
Figure 1. Derating Curve
4/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1G NPN TRANSISTOR
1
1000
I /I
= 10
C B
V
CE
= 10 V
T ꢀ=ꢀ−25
°
C
A
25
°
C
T ꢀ=ꢀ75
°
C
A
25
°
C
0.1
−25
°
C
75
°
C
100
0.01
0.001
10
0
20
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
3
100
10
25
°
C
75
°
C
f = 1 MHz
= 0 V
I
E
T ꢀ=ꢀ−25
°
C
A
T =
25
°
C
A
1
0.1
2
1
0.01
0.001
V
O
= 5 V
9
0
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
T ꢀ=ꢀ−25
°
C
A
25
°
C
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
5/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1G
PNP TRANSISTOR
1000
1
V
= 10 V
CE
I /I
= 10
C B
T ꢀ=ꢀ75
°
C
A
T ꢀ=ꢀ−25
°
C
A
25
°
C
ꢁ0.1
100
−25
°
C
25
°
C
75
°
C
ꢁ0.01
10
ꢁ20
I ,
COLLECTOR CURRENT (mA)
1
10
100
0
ꢁ40
50
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
3
100
10
1
25
°
C
75
°
C
f = 1 MHz
= 0 V
l
E
T ꢀ=ꢀ−25
°
C
A
T =
25
°
C
A
2
1
ꢁ0.1
ꢁ0.01
V
O
= 5 V
0
0
ꢁ0.001
10
20
30
40
50
0
1
ꢁ2
3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
ꢁ9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25
°
C
A
10
25
°
C
75
°
C
1
ꢁ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
6/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5312DW1T1G NPN TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C B
T ꢀ=ꢀ75
°
C
A
25
°
C
25
°
C
T ꢀ=ꢀ−25
°
C
A
0.1
−25
°
C
75
°
C
100
0.01
10
0.001
1
10
I ,
COLLECTOR CURRENT (mA)
100
0
20
40
50
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 12. V
CE(sat)
versus I
C
Figure 13. DC Current Gain
4
3
2
1
100
10
1
75
°
C
25
°
C
f = 1 MHz
= 0 V
T ꢀ=ꢀ−25
°
C
A
I
E
T =
25
°
C
A
0.1
0.01
V
= 5 V
O
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25
°
C
A
10
1
25
°
C
75
°
C
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output
Current
7/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5312DW1T1G PNP TRANSISTOR
1000
10
V
= 10 V
CE
I /I
= 10
B
C
T ꢀ=ꢀ75
°
C
A
1
25
°
C
75
°
C
25
°
C
T ꢀ=ꢀ−25
°
C
A
−25
°
C
100
ꢁ0.1
10
0.01
1
10
0
ꢁ20
I ,
COLLECTOR CURRENT (mA)
ꢁ40
ꢁ50
100
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 17. V
CE(sat)
versus I
C
Figure 18. DC Current Gain
4
3
2
100
25
°
C
75
°
C
f = 1 MHz
= 0 V
T ꢀ=ꢀ−25
°
C
A
l
E
10
1
T =
25
°
C
A
ꢁ0.1
1
0
ꢁ0.01
V
= 5 V
ꢁ9
O
ꢁ0.001
0
1
ꢁ2
ꢁ3
ꢁ4
ꢁ5
ꢁ6
ꢁ7
ꢁ8
10
0
10
20
30
40
50
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢀ=ꢀ−25
°
C
A
10
25
°
C
75
°
C
1
ꢁ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I ,
COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
8/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5313DW1T1G NPN TRANSISTOR
10
1
1000
V
= 10 V
CE
I /I
= 10
B
C
T ꢀ=ꢀ75
°
C
A
25
°
C
−25
°
C
25
°
C
75
°
C
100
T ꢀ=ꢀ−25
°
C
A
0.1
0.01
10
0
20
I ,
COLLECTOR CURRENT (mA)
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 22. V
CE(sat)
versus I
C
Figure 23. DC Current Gain
1
100
10
1
25
°
C
f = 1 MHz
= 0 V
75
°
C
I
E
T ꢀ=ꢀ−25
°
C
A
0.8
T =
25
°
C
A
0.6
0.4
0.1
0.01
0.2
V
O
= 5 V
0.001
0
0
10
20
30
40
50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25
°
C
A
25
°
C
75
°
C
10
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 26. Input Voltage versus Output Current
9/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5313DW1T1G PNP TRANSISTOR
1
1000
I /I
= 10
C B
T ꢀ=ꢀ75
°
C
A
T ꢀ=ꢀ−25
°
C
A
25
°
C
25
°
C
75
°
C
−25
°
C
100
ꢁ0.1
ꢁ0.01
10
0
10
20
30
40
1
10
I ,
COLLECTOR CURRENT (mA)
100
I ,
COLLECTOR CURRENT (mA)
C
C
Figure 27. V
CE(sat)
versus I
C
Figure 28. DC Current Gain
1
100
25
°
C
T ꢀ=ꢀ75
°
C
A
f = 1 MHz
= 0 V
l
E
0.8
−25
°
C
10
1
T =
25
°
C
A
0.6
0.4
ꢁ0.1
ꢁ0.01
0.2
0
V
= 5 V
ꢁ5
O
ꢁ0.001
0
10
20
30
40
50
0
1
2
3
ꢁ4
ꢁ6
ꢁ7
ꢁ8
ꢀ9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
V
O
= 0.2 V
T ꢀ=ꢀ−25
°
C
A
25
°
C
75
°
C
10
1
ꢀ0.1
0
10
ꢁ20
ꢁ30
ꢁ40
ꢁ50
I ,
COLLECTOR CURRENT (mA)
C
Figure 31. Input Voltage versus Output Current
10/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1G NPN TRANSISTOR
1
300
T ꢀ=ꢀ75
°
C
A
V
= 10
I /I
= 10
C B
CE
T ꢀ=ꢀ−25
°
C
250
200
150
100
A
25
°
C
25
°
C
75
°
C
0.1
−25
°
C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15
20 40 50 60 70 80 90 100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 32. V
CE(sat)
versus I
C
Figure 33. DC Current Gain
4
3.5
3
100
10
1
f = 1 MHz
= 0 V
T ꢀ=ꢀ75
°
C
25
°
C
A
l
E
T =
25
°
C
A
−25
°
C
2.5
2
1.5
1
V
= 5 V
O
0.5
0
0
2
4
6
8
10 15 20
25 30
35 40 45 50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10
V
O
= 0.2 V
T ꢀ=ꢀ−25
°
C
A
25
°
C
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 36. Input Voltage versus Output Current
11/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1G PNP TRANSISTOR
1
180
T ꢀ=ꢀ75
°
C
A
I /I
= 10
C B
V
CE
= 10 V
160
140
120
100
80
T ꢀ=ꢀ−25
°
C
A
25
°
C
−25
°
C
25
°
C
0.1
75
°
C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15
20 40 50 60 70 80 90
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 37. V
CE(sat)
versus I
C
Figure 38. DC Current Gain
4.5
4
100
10
1
T ꢀ=ꢀ75
°
C
f = 1 MHz
= 0 V
A
25
°
C
l
E
3.5
3
T =
25
°
C
A
−25
°
C
2.5
2
1.5
1
V
O
= 5 V
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10
V
O
= 0.2 V
25
°
C
T ꢀ=ꢀ−25
°
C
A
75
°
C
1
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 41. Input Voltage versus Output Current
12/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5315DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
75
°
C
C
B
T =
−25
°
C
A
75
°
C
100
0.1
0.01
25
°
C
−25
°
C
25
°
C
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 42. V
CE(sat)
versus I
C
Figure 43. DC Current Gain
12
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
10
8
I
E
25
°
C
6
T =
−25
°
C
A
0.1
4
0.01
2
V
= 5 V
9
O
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 46. Input Voltage versus Output Current
13/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5315DW1T1G PNP TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
25
°
C
T =
−25
°
C
A
75
°
C
100
0.1
−25
°
C
25
°
C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 47. V
CE(sat)
versus I
C
Figure 48. DC Current Gain
100
10
1
4.5
4
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
3.5
3
25
°
C
2.5
2
T =
−25
°
C
A
0.1
1.5
1
0.01
V
O
= 5 V
0.5
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50
V ,
INPUT VOLTAGE (VOLTS)
in
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 51. Input Voltage versus Output Current
14/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5316DW1T1G NPN TRANSISTOR
1
1000
V
= 10 V
CE
I /I
= 10
C
B
75
°
C
T =
−25
°
C
A
75
°
C
100
0.1
0.01
25
°
C
−25
°
C
25
°
C
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 52. V
CE(sat)
versus I
C
Figure 53. DC Current Gain
12
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
10
8
I
E
25
°
C
6
T =
−25
°
C
A
0.1
4
0.01
2
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 56. Input Voltage versus Output Current
15/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5316DW1T1G PNP TRANSISTOR
1
1000
V
CE
= 10 V
75
°
C
I /I
= 10
C
B
T =
−25
°
C
A
75
°
C
25
°
C
100
0.1
0.01
−25
°
C
25
°
C
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 57. V
CE(sat)
versus I
C
Figure 58. DC Current Gain
100
10
1
4.5
4
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
25
°
C
3.5
3
T =
−25
°
C
A
2.5
2
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0.001
0
0
0
1
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50
V ,
INPUT VOLTAGE (VOLTS)
in
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 61. Input Voltage versus Output Current
16/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
100
0.1
0.01
−25
°
C
25
°
C
75
°
C
25
°
C
10
1
T =
−25
°
C
A
0.001
0
5
10
15
20
25
30
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 62. V
CE(sat)
versus I
C
Figure 63. DC Current Gain
10
100
10
1
75
°
C
25
°
C
T =
−25
°
C
A
1
75
°
C
T =
−25
°
C
A
25
°
C
0.1
0.01
V
O
= 0.2 V
20
V
= 5 V
O
0.1
0.001
0
5
10
15
25
0
1
2
3
4
5
6
7
8
9
10
I ,
COLLECTOR CURRENT (mA)
C
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 65. Input Voltage versus Output Current
Figure 64. Output Current versus Input Voltage
17/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5330DW1T1G PNP TRANSISTOR
100
1
I /I
= 10
C
B
75
°
C
0.1
0.01
75
°
C
−25
°
C
10
25
°
C
25
°
C
T =
−25
°
C
A
V
CE
= 10 V
0.001
1
0
10
20
30
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 66. V
CE(sat)
versus I
C
Figure 67. DC Current Gain
4.5
4
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
3.5
3
25
°
C
2.5
2
T =
−25
°
C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 68. Output Capacitance
Figure 69. Output Current versus Input Voltage
10
T =
−25
°
C
A
75
°
C
1
25
°
C
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 70. Input Voltage versus Output Current
18/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5331DW1T1G NPN TRANSISTOR
1
1000
V
= 10 V
CE
I /I
= 10
C
B
75
°
C
100
0.1
0.01
−25
°
C
75
°
C
25
°
C
25
°
C
10
1
T =
−25
°
C
A
0.001
0
5
10
15
20
25
30
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 71. V
CE(sat)
versus I
C
Figure 72. DC Current Gain
12
10
8
100
10
1
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
75
°
C
25
°
C
6
T =
−25
°
C
A
0.1
4
0.01
2
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 73. Output Capacitance
Figure 74. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
75
°
C
25
°
C
V
= 0.2 V
20
O
0.1
0
5
10
15
25
I ,
COLLECTOR CURRENT (mA)
C
Figure 75. Input Voltage versus Output Current
19/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5331DW1T1G PNP TRANSISTOR
100
1
I /I
= 10
C
B
75
°
C
0.1
25
°
C
75
°
C
−25
°
C
10
25
°
C
0.01
T =
−25
°
C
A
V
CE
= 10 V
0.001
1
0
10
20
30
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 76. V
CE(sat)
versus I
C
Figure 77. DC Current Gain
4.5
4
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
3.5
3
25
°
C
2.5
2
T =
−25
°
C
A
0.1
1.5
1
0.01
V
= 5 V
9
O
0.5
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 78. Output Capacitance
Figure 79. Output Current versus Input Voltage
10
T =
−25
°
C
A
75
°
C
1
25
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 80. Input Voltage versus Output Current
20/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5332DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
75
°
C
100
0.1
−25
°
C
25
°
C
25
°
C
0.01
10
1
T =
−25
°
C
A
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 81. V
CE(sat)
versus I
C
Figure 82. DC Current Gain
12
10
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
25
°
C
8
6
4
2
T =
−25
°
C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 83. Output Capacitance
Figure 84. Output Current versus Input Voltage
10
T =
−25
°
C
A
25
°
C
1
75
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 85. Input Voltage versus Output Current
21/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5332DW1T1G PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
25
°
C
75
°
C
100
0.1
−25
°
C
25
°
C
T =
−25
°
C
A
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 86. V
CE(sat)
versus I
C
Figure 87. DC Current Gain
6
5
4
3
2
1
100
10
1
f = 1 MHz
= 0 V
T =
25
°
C
A
75
°
C
I
E
25
°
C
T =
−25
°
C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 88. Output Capacitance
Figure 89. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
75
°
C
25
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 90. Input Voltage versus Output Current
22/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5333DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
75
°
C
100
0.1
0.01
T =
−25
°
C
A
25
°
C
−25
°
C
25
°
C
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 91. V
CE(sat)
versus I
C
Figure 92. DC Current Gain
8
7
6
5
4
3
2
1
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
25
°
C
0.1
T =
−25
°
C
A
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 93. Output Capacitance
Figure 94. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 95. Input Voltage versus Output Current
23/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5333DW1T1G PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
T =
−25
°
C
100
A
0.1
75
°
C
25
°
C
−25
°
C
25
°
C
0.01
10
1
0.001
0
5
10
15
20
25
30
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 96. V
CE(sat)
versus I
C
Figure 97. DC Current Gain
4
3.5
3
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
25
°
C
2.5
2
T =
−25
°
C
A
0.1
1.5
1
0.01
V
O
= 5 V
0.5
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 98. Output Capacitance
Figure 99. Output Current versus Input Voltage
10
T =
−25
°
C
A
1
75
°
C
25
°
C
V
= 0.2 V
20
O
0.1
0
5
10
15
25
I ,
COLLECTOR CURRENT (mA)
C
Figure 100. Input Voltage versus Output
Current
24/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5334DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
75
°
C
−25
°
C
100
0.1
T =
−25
°
C
A
25
°
C
25
°
C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 101. V
CE(sat)
versus I
C
Figure 102. DC Current Gain
3.5
3
100
10
1
f = 1 MHz
= 0 V
T =
25
°
C
A
75
°
C
I
E
2.5
2
25
°
C
1.5
1
0.1
T =
−25
°
C
A
0.01
0.5
V
O
= 5 V
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 103. Output Capacitance
Figure 104. Output Current versus Input
Voltage
100
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 105. Input Voltage versus Output
Current
25/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5334DW1T1G PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
100
0.1
T =
−25
°
C
A
75
°
C
25
°
C
−25
°
C
25
°
C
0.01
10
1
0.001
0
5
10
15
20
25
30
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 106. V
CE(sat)
versus I
C
Figure 107. DC Current Gain
26/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5335DW1T1G NPN TRANSISTOR
1
1000
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
75
°
C
100
0.1
T =
−25
°
C
A
25
°
C
−25
°
C
25
°
C
0.01
10
1
0.001
0
20
30
40
50
1
10
100
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 108. V
CE(sat)
versus I
C
Figure 109. DC Current Gain
12
10
100
10
1
75
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
25
°
C
8
6
4
2
T =
−25
°
C
A
0.1
0.01
V
= 5 V
O
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 110. Output Capacitance
Figure 111. Output Current versus Input
Voltage
10
T =
−25
°
C
A
1
25
°
C
75
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 112. Input Voltage versus Output
Current
27/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS — LMUN5335DW1T1G PNP TRANSISTOR
1000
1
V
CE
= 10 V
I /I
= 10
C
B
75
°
C
75
°
C
100
0.1
T =
−25
°
C
A
25
°
C
−25
°
C
25
°
C
0.01
10
1
0.001
0
10
20
30
40
50
1
10
100
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 113. V
CE(sat)
versus I
C
Figure 114. DC Current Gain
4.5
4
100
10
1
25
°
C
f = 1 MHz
= 0 V
T =
25
°
C
A
I
E
3.5
3
75
°
C
2.5
2
T =
−25
°
C
A
0.1
1.5
1
0.01
V
= 5 V
O
0.5
0
0
0.001
5
10 15 20 25 30
35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V ,
REVERSE BIAS VOLTAGE (VOLTS)
R
V ,
INPUT VOLTAGE (VOLTS)
in
Figure 115. Output Capacitance
Figure 116. Output Current versus Input
Voltage
10
75
°
C
1
T =
−25
°
C
A
25
°
C
V
= 0.2 V
40
O
0.1
0
10
20
30
50
I ,
COLLECTOR CURRENT (mA)
C
Figure 117. Input Voltage versus Output
Current
28/29
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1G SERIES
SC
–
88/SOT
–
363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
G
2. CONTROLLING DIMENSION: INCH.
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
1.80
1.15
0.80
0.10
MAX
2.20
6
5
4
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
1.35
–
B
–
S
1.10
1
2
3
0.30
0.026 BSC
0.65 BSC
0.10
—
0.004
0.010
0.012
—
0.2 (0.008)
M
M
B
D
6PL
0.004
0.004
0.10
0.10
0.25
N
K
N
S
0.30
0.008 REF
0.20 REF
2.20
0.079
0.087
2.00
J
C
PIN 1. EMITTER 2
2. BASE 2
K
H
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
0.5 mm (min)
1.9 mm
29/29
