LRC-LN06N060TZHG
| Part # | LRC-LN06N060TZHG |
Download  | LRC-LN06N060TZHG |
LN06N060T
Z
HG
60V N-Channel (D-S) MOSFET
1. FEATURES
●
Low thermal impedance.
●
Fast switching speed.
●
We declare that the material of product
compliance with
SOT223
RoHS requirements and Halogen Free.
2. APPLICATIONS
●
Load/Power switch forportables and computing
●
DC−DC conversion
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LN06N060TZHG
GS
1000/Tape&Reel
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Limits
60
Unit
Symbol
VDS
VGS
ID
Drain-Source Voltage
V
Gate-Source Voltage
± 20
4.5
℃
TA = 25
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
Power Dissipation (Note 1)
A
18
IDM
IAS
A
mJ
W
12
EAS
7.2
PD
TA = 25
℃
2
Operating Junction and Storage Temperature Range
℃
TJ , Tstg
-55~+150
5. THERMAL CHARACTERISTICS
Parameter
Symbol
RΘJA
Limits
Unit
60
℃
/W
℃
/W
Thermal Resistance,Junction–to–Am
b
ient(
N
ote 1)
Thermal Resistance,Junction-to-Case
RΘJ
C
10
1.
“
1.5 x 1.5
“
FR4
b
oard using 1 s
q
in
p
ad, 2 o
z C
u.
2.Pulse width limited by maximum junction temperature
Leshan Radio Company, LTD.
1/6
Rev.A Nov.
2021
LN06N060T
Z
HG
60V N-Channel (D-S) MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25
ºC
)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Static
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
V
VBRDSS
VGS(th)
IGSS
60
1.0
–
–
2.0
–
–
3.0
± 100
1
Gate-Source Threshold Voltage
(VDS = VGS , ID = 250 μA)
Gate-Body Leakage Current
(VDS = 0 V, VGS = ± 20 V)
V
n A
u A
Zero Gate Voltage Drain Current
IDSS
–
–
(VDS = 60 V, VGS = 0 V)
Drain-Source On-Resistance(Note 3)
mΩ
–
–
60
RDS(ON)
VSD
(VGS = 10 V, ID = 3 A)
–
–
75
(VGS = 5 V, ID = 2 A)
Diode Forward Voltage
(IS = 1 A, VGS = 0 V)
D
ynamic
–
–
V
1.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
12.7
2.3
3.6
743
38
(VDS = 30 V,
ID = 3 A, VGS
= 10 V)
nC
pF
(VGS = 0 V, VDS
= 30 V, f= 1MHz)
26
8.1
4.2
26.4
5.2
(VDS = 30 V, RL
= 30
Ω
, ID = 1 A,
VGS = 10 V,
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG =
6.2
Ω)
3.Pulse test: PW
300us duty cycle
≤ ≤
2%.
Leshan Radio Company, LTD.
2/6
Rev.A Nov.
2021
LN06N060T
Z
HG
60V N-Channel (D-S) MOSFET
7
.
ELECTRICAL CHARACTERISTICS CURVES
VGS=4.8V,5V,6V,7V,8V,9V,10V
20
20
15
10
5
VGS=4.6V
15
10
5
VGS=4.4V
VGS=4.2V
-55
℃
25
℃
VGS=4.0V
VGS=3.8V
150
℃
VGS=3.6V
VGS=3.4V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS(V)
VGS(V)
ID vs. VGS
ID vs. VDS
20
15
10
5
0.12
0.10
0.08
0.06
0.04
0.02
0.00
VGS=5V
VGS=10V
-55
℃
150
℃
25
℃
0
2
4
6
8
10 12 14 16 18 20
ID(A)
0.0
0.2
0.4
0.6
VSD(V)
0.8
1.0
1.2
IS vs. VSD
RDS(on) vs. ID
Leshan Radio Company, LTD.
3/6
Rev.A Nov.
2021
LN06N060T
Z
HG
60V N-Channel (D-S) MOSFET
7
.
ELECTRICAL CHARACTERISTICS CURVES
(Con.)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.20
0.16
0.12
0.08
0.04
0.00
ID=3A
150
℃
VGS=5V,ID=2A
25
℃
VGS=10V,ID=3A
-55
℃
0
2
4
6
8
10
-50 -25
0
25 50 75
100 125 150
Tj(
℃
)
VGS(V)
RDS(on) vs. Tj
RDS(on) vs. VGS
1200
1000
800
600
400
200
0
2.4
2.2
2.0
1.8
1.6
1.4
f=1.0MHz,
ID=250uA
Ta=25
℃
Ciss
Coss
Crss
-50 -25
0
25 50 75
100 125 150
0
10
20
30
VDS(V)
40
50
60
Tj(
℃
)
VGSth vs. Tj
Capacitance
Leshan Radio Company, LTD.
4/6
Rev.A Nov.
2021
LN06N060T
Z
HG
60V N-Channel (D-S) MOSFET
7
.
ELECTRICAL CHARACTERISTICS CURVES
(Con.)
100
10us
10
100us
1
0.1
100ms
DC result
1ms
10ms
PCB Size
1.5 x 1.5in(FR-4)
0.01
0.1
1
10
100
VDS(V)
Safe Operating Area
10
1
50%
25%
10%
5%
0.1
1%
P(pk)
0.01
0.001
t
1
t
2
0.1%
1.Duty Cycle, D = t
1
/ t
2
C /W
°
= 60
2.R
θ
JA
Single Pulse
3.T
J
-T
A
=P*
R
θ
JA
(t)
(t)=r(t)*
0.0001
4.
R
θ
JA
R
θ
JA
FR4 Board
0.00001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse time (s)
Thermal Response
Leshan Radio Company, LTD.
5/6
Rev.A Nov.
2021
LN06N060T
Z
HG
60V N-Channel (D-S) MOSFET
8
.OUTLINE AND DIMENSIONS
SOT223
D
SOT223
b1
DIM
A
MIN
1.50
0.00
0.80
2.90
0.60
0.20
6.30
3.30
NOR
1.60
0.05
0.90
3.02
0.72
0.27
6.50
3.50
MAX
1.70
0.10
1.00
3.10
0.80
0.35
6.70
3.70
A2
C
A1
A2
b1
b2
c
D
E
e
e1
4.60BSC
2.30BSC
7.00
0.25
E
H
6.80
0.80
7.20
1.20
Gauge Plane
Seating Plane
b2
L
1.00
e1
L1
θ
1.75(REF)
0º~8º
10º
e
θ1
8º
12º
All Dimensions in mm
GENERAL NOTES
1. Top package surface finish Ra0.4±0.2um
2. Bottom package surface finish Ra0.7±0.2um
3. Side package surface finish Ra0.4±0.2um
4. Protrusion or Gate Burrs shall not exceed
0.10mm per side.
9
.SOLDERING FOOTPRINT
X1
SOT223
DIM
X1
Y1
X2
Y2
(mm)
3.80
2.00
1.20
2.00
2.30
6.30
C1
C2
X2
C1
C1
Leshan Radio Company, LTD.
6/6
Rev.A Nov.
2021
DISCLAIMER
●
Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee.
The curve of test items without electric parameter is used as reference only.
●
Before you use our Products for new Project, you are requested to carefully read this document and fully under-
-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising
from the use of any LRC’s Products against warning, caution or note contained in this document.
●
All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using LRC’s Products,please confirm the latest information with a LRC sales represe-
-ntative.
